Optoelectronic semiconductor chip, method of fabrication and application in an optoelectronic component
View Patent ↗An optoelectronic semiconductor chip includes an active layer with a first and a second major face, including a semiconductor material which emits or receives radiation when the semiconductor chip is in operation; a patterned layer including three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation, wherein the patterned layer includes an inorganic-organic hybrid material.
1. An optoelectronic semiconductor chip comprising:
an active layer with a first and a second major face, comprising a semiconductor material which emits or receives radiation when the semiconductor chip is in operation;
a patterned layer comprising three-dimensional patterns for outcoupling or incoupling radiation and arranged on the first major face in a beam path of the radiation; wherein the patterned layer comprises an inorganic-organic hybrid material comprising 1) a hydrolytic condensation product containing organofunctional silanes with organic substituents which are at least in part crosslinked with the organic prepolymer, and 2) an organic prepolymer and the inorganic-organic hybrid material contain at least 20 wt. % of titanium and/or zirconium that is chemically bonded to the inorganic-organic hybrid material.
2. The semiconductor chip according to claim 1 , further comprising a reflective layer arranged on the second major face of the active layer.
3. The semiconductor chip according to claim 1 , wherein the three-dimensional patterns for outcoupling or incoupling radiation are only on top of the first major face present in the patterned layer.
4. The semiconductor chip according to claim 1 , wherein the active layer has a layer thickness of 0.4 to 2 μm.
5. The semiconductor chip according to claim 1 , wherein the patterned layer has a layer thickness of 0.5 to 3 μm.
6. The semiconductor chip according to claim 1 , wherein the three-dimensional patterns are formed with a resolution of ≦3 μm.
7. The semiconductor chip according to claim 1 , wherein the patterned layer has a refractive index of ≧1.6.
8. The semiconductor chip according to claim 1 , wherein the patterned layer is arranged directly on the active layer.
9. A method of producing the semiconductor chip according to claim 1 , comprising:
(a) providing a body comprising the active layer, wherein the active layer comprises the first and second major faces;
(b) applying a coating material to the first major face;
(c) patterning the coating material; and
(d) curing the coating material to yield the inorganic-organic hybrid material, thereby forming the patterned layer.
10. The method according to claim 9 , wherein in step (c) a stamp patterns the coating material.
11. The method according to claim 9 , wherein steps (c) and (d) are performed together.
12. The method according to claim 9 , wherein the coating material is applied in step (b) as a layer with a layer thickness of 0.2 to 1.5 μm.
13. An optoelectronic component comprising a semiconductor chip according to claim 1 .