Wet-chemical systems and methods for producing black silicon substrates
View Patent ↗A wet-chemical method of producing a black silicon substrate. The method comprising soaking single crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution. The substrate is combined with an etchant solution that forms a uniform noble metal nanoparticle induced Black Etch of the silicon wafer, resulting in a nanoparticle that is kinetically stabilized. The method comprising combining with an etchant solution having equal volumes acetonitrile/acetic acid:hydrofluoric acid:hydrogen peroxide.
1. A wet-chemical method of producing black silicon substrates, comprising:
soaking crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution, wherein the crystalline silicon wafers comprise a dopant diffused n-p junction; and
combining the wafers with a catalytic solution and an etchant solution wherein the etchant solution comprises an acetonitrile solution and acetic acid combined with a hydrofluoric acid and hydrogen peroxide etching solution;
wherein the catalytic solution supplies a source of a catalytic noble metal and the combining provides a uniform and kinetically stabilized noble metal nanoparticle induced Black Etch of the silicon wafer.
2. The method of claim 1 , wherein the inorganic compound solution comprises chlorauric acid.
3. The method of claim 1 , wherein the wafers comprise a surface doped with n-type dopant phosphorus from phosphorous oxychloride gaseous diffusion.
4. The method of claim 1 , wherein the wafers are doped with p-type dopant.
5. The method of claim 1 , wherein the noble metal nanoparticle comprises gold, silver, platinum, palladium, or copper.
6. The method of claim 1 , further comprising reducing reflective losses to less than about 3% across the useful solar spectrum.
7. The method of claim 1 , further comprising doping the crystalline silicon wafers with n-type dopant phosphorus from phosphorous oxychloride (POCl 3 ) gaseous diffusion before the soaking.
8. The method of claim 1 , further comprising producing an anti-reflective nanoporous layer on the crystal silicon wafers with the Black Etch.
9. The method of claim 1 , further comprising producing Si surfaces that exhibit less than 3% reflectivity in the wavelength range of about 350-1000 nm.
10. A method comprising: combining gold-containing ionic or molecular species with a hydrogen peroxide, hydrogen fluoride, HF activity modifier and surface hydrophyllicity modifier etch; producing an anti-reflective silicon surface in a wavelength range of 350-1000 nm.
11. A wet-chemical method of producing black silicon substrates, comprising:
soaking crystalline silicon wafers in a predetermined volume of a diluted inorganic compound solution, wherein the crystalline silicon wafers comprise a dopant diffused n-p junction; and
combining the wafers with a catalytic solution and an etchant solution; wherein the etchant solution comprises an organic HF activity modifier and a surface hydrophyllicity modifier combined with a hydrofluoric acid and hydrogen peroxide etching solution;
wherein the catalytic solution supplies a source of a catalytic noble metal and the combining provides a uniform and kinetically stabilized noble metal nanoparticle induced Black Etch of the silicon wafer.
12. The method of claim 11 , wherein the inorganic compound solution comprises chlorauric acid.
13. The method of claim 11 , wherein the wafers comprise a surface doped with n-type dopant phosphorus from phosphorous oxychloride gaseous diffusion.
14. The method of claim 11 , wherein the wafers are doped with p-type dopant.
15. The method of claim 11 , wherein the noble metal nanoparticle comprises gold, silver, platinum, palladium, or copper.
16. The method of claim 11 , further comprising reducing reflective losses to less than about 3% across the useful solar spectrum.
17. The method of claim 11 , further comprising doping the crystalline silicon wafers with n-type dopant phosphorus from phosphorous oxychloride (POCl 3 ) gaseous diffusion before the soaking.
18. The method of claim 11 , further comprising producing an anti-reflective nanoporous layer on the crystal silicon wafers with the Black Etch.
19. The method of claim 11 , further comprising producing Si surfaces that exhibit less than 3% reflectivity in the wavelength range of about 350-1000 nm.