Method of curing solar cells to reduce lamination induced efficiency loss

1. A method for encapsulating a solar cell, said method comprising:

providing a solar cell comprising a copper indium gallium selenide (CIGS) absorber layer;

soaking said solar cell with light;

curing said solar cell in an environment having a relative humidity of about 20% to about 90% after said soaking, wherein said curing passivates selenium vacancy defects in said CIGS absorber layer and takes place for a time greater than 1 day, and said soaking takes place for a time within a range of about 1-30 minutes; and

laminating a film on said solar cell after said curing.

2. The method as in claim 1 , further comprising covering said solar cell with a tempered glass after said curing.

3. The method as in claim 1 , wherein said laminating comprises laminating an ethylene vinyl acetate (EVA) copolymer film on said solar cell.

4. The method as in claim 3 , further comprising disposing a glass pane over said solar cell and wherein said EVA film and said glass pane are on opposed surfaces of said solar cell.

5. The method as in claim 1 , wherein said laminating takes place at a temperature within a range of about 100° C. to about 140° C. and at a pressure greater than STP (standard temperature and pressure), and said film is an encapsulating film.

6. The method as in claim 1 , further comprising directing a laser beam onto edges of said solar cell to carry out a laser edge deletion process, prior to said soaking.

7. The method as in claim 1 , further comprising testing said solar cell by carrying out an IV test on said solar cell between said soaking and said curing.

8. The method as in claim 7 , wherein said carrying out an IV test comprises measuring IV (current-voltage) curves of said solar cell and computing at least one of solar cell efficiency, VOC (open-circuit voltage), ISC (short-circuit current), JSC (short-circuit current density), VMAX (maximum voltage), IMAX (maximum current), and PMAX (maximum power) based on said IV curves.

9. The method as in claim 1 , wherein said soaking comprises exposing for a time within a range of about 1 minute to about 30 minutes.

10. The method as in claim 1 , wherein said curing takes place for a time within a range of about 10 minutes to about two days.

11. The method as in claim 1 , wherein said curing takes place in an environment having a relative humidity of about 50% to about 90%, for about one hour.

12. The method as in claim 1 , wherein said solar cell comprises a CIGS (copper indium gallium selenide) solar cell and said film is an encapsulating film.

13. The method as in claim 1 , wherein said solar cell includes a CIGS (copper indium gallium selenide) absorber layer and a TCO (transparent conductive oxide) layer over said absorber layer and wherein said laminating comprises forming a polymeric film on said solar cell.

14. A method for encapsulating a solar cell, said method comprising:

providing a solar cell;

soaking said solar cell with light;

curing said solar cell after said soaking, wherein said curing takes place at room temperature and in an environment having a relative humidity of about 45% to about 65%; and

laminating a film on said solar cell after said curing, wherein said laminating takes place at a temperature within a range of about 100° C. to about 140° C. and at a pressure within a range of about 20 kPa to about 80 kPa.

15. A method for encapsulating a solar cell, said method comprising:

providing a solar cell with a copper indium gallium selenide (CIGS) absorber layer;

irradiating said solar cell with light;

testing said solar cell by carrying out at least an IV test on said solar cell after said irradiating;

curing said solar cell in an environment having a relative humidity of about 20% to about 90% relative humidity after said testing said solar cell, wherein said curing passivates selenium vacancy defects in said CIGS absorber layer and takes place for a time greater than 1 day, and said soaking takes place for a time within a range of about 1-30 minutes;

laminating an encapsulating film on a back side of said solar cell after said curing; and

disposing a front glass sheet on a front side of said solar cell.

16. The method as in claim 15 , wherein said curing takes place at room temperature and for a time within a range of about 10 minutes to about 1 hour.

17. The method as in claim 16 , wherein said IV test involves exposing said solar cell to a light source and said laminating takes place after said disposing and includes laminating a further encapsulating film over said front glass sheet.

18. The method as in claim 16 , wherein said laminating comprises forming an ethylene-vinyl acetate (EVA) copolymer film on said solar cell and said irradiating takes place for a time within a range of about 1 minute to about 30 minutes.

19. The method as in claim 15 , wherein said providing comprises providing said solar cell with an exposed TCO (transparent conductive oxide) surface and said irradiating comprises irradiating said solar cell including said exposed TCO surface.

20. A method for encapsulating a solar cell, said method comprising:

providing a solar cell with a copper indium gallium selenide (CIGS) absorber layer;

directing a laser beam onto an edge portion of said solar cell to carry out a laser edge deletion process;

soaking said solar cell with light;

testing said solar cell after said soaking, by carrying out at least an IV test on said solar cell;

curing said solar cell in an environment having a relative humidity of about 50% to about 90% relative humidity after said testing said solar cell, wherein said curing passivates selenium vacancy defects in said CIGS absorber layer and takes place for a time greater than 1 day, and said soaking takes place for a time within a range of about 1-30 minutes;

laminating an ethylene-vinyl acetate (EVA) copolymer film on a back side of said solar cell after said curing; and

disposing a front glass sheet on a front side of said solar cell after said laminating.