High voltage electrostatic discharge protection device
View Patent ↗An electrostatic discharge protection device is provided. The electrostatic discharge protection device can include a semiconductor substrate having a first well and a second well, a silicon controller rectifier (SCR) device, and first and second impurity areas disposed on the first and second wells to form a PN junction. The SCR can have a PNPN structure or an NPNP structure, and the PN junction structure and the SCR device can be alternately disposed when the substrate is viewed from above.
1. An electrostatic discharge protection device comprising:
a semiconductor substrate having a first well and a second well;
an SCR device having a PNPN structure and disposed on the first and second wells; and
a diode device having an NP structure and disposed at both sides of the SCR device,
wherein, when the substrate is viewed from above, the diode device and the SCR device are alternately disposed, and
wherein the diode device comprises:
a third N+ area formed by implanting an n-type impurity on the second well to be connected to an anode;
a third P+ area formed by implanting a p-type impurity on the second well and disposed at one side of the third N+ area;
a fourth P+ area formed by implanting a p-type impurity on the first well to be connected to a cathode; and
a fourth N+ area formed by implanting an n-type impurity on the first well and disposed at one side of the fourth P+ area.
2. The electrostatic discharge protection device according to claim 1 , wherein the first well is a P well and the second well is an N well.
3. The electrostatic discharge protection device according to claim 1 , further comprising a p+ doping line doped with a p-type impurity formed at one side of the second P+ area in order to allow capturing of moving holes.
4. The electrostatic discharge protection device according to claim 1 , further comprising an N+ doping line doped with an n-type impurity formed at one side of the first N+ area in order to allow capturing of moving electrons.
5. The electrostatic discharge protection device according to claim 1 , wherein the first well is a P well and the second well is an N well.
6. An electrostatic discharge protection device comprising:
a semiconductor substrate having a first well and a second well;
an SCR device having a PNPN structure and disposed on the first and second wells; and
a diode device having an NP structure and disposed at both sides of the SCR device;
wherein, when the substrate is viewed from above, the diode device and the SCR device are alternately disposed,
wherein the SCR device comprises:
a first P+ area formed by implanting a p-type impurity on the second well to be connected to an anode;
a first N+ area formed by implanting an n-type impurity on the second well and disposed at one side of the first P+ area;
a second N+ area formed by implanting an n-type impurity on the first well to be connected to a cathode; and
a second P+ area formed by implanting a p-type impurity on the first well and disposed at one side of the second N+ area, and
wherein the diode device comprises:
a third N+ area formed by implanting an n-type impurity on the second well to be connected to an anode;
a third P+ area formed by implanting a p-type impurity on the second well and disposed at one side of the third N+ area;
a fourth P+ area formed by implanting a p-type impurity on the first well to be connected to a cathode; and
a fourth N+ area formed by implanting an n-type impurity on the first well and disposed at one side of the fourth P+ area.
7. The electrostatic discharge protection device according to claim 6 , wherein the first well is a P well and the second well is an N well.
8. The electrostatic discharge protection device according to claim 6 , further comprising a p+ doping line doped with a p-type impurity formed at one side of the second P+ area in order to allow capturing of moving holes.
9. The electrostatic discharge protection device according to claim 6 , further comprising an N+ doping line doped with an n-type impurity formed at one side of the first N+ area in order to allow capturing of moving electrons.