Laterally diffused metal oxide semiconductor
View Patent ↗A laterally-diffused metal oxide semiconductor (LDMOS) device and method of manufacturing the same are provided. The LDMOS device can include a drift region, a source region and a drain region spaced a predetermined interval apart from each other in the drift region, a field insulating layer formed in the drift region between the source region and the drain region, and a first P-TOP region formed under the field insulating layer. The LDMOS device can further include a gate polysilicon covering a portion of the field insulating layer, a gate electrode formed on the gate polysilicon, and a contact line penetrating the gate electrode, the gate polysilicon, and the field insulating layer.
1. A laterally-diffused metal oxide semiconductor (LDMOS) device, comprising:
a drift region;
a source region and a drain region spaced a predetermined interval apart from each other in the drift region;
a field insulating layer formed in the drift region between the source region and the drain region;
a first P-TOP region formed under the field insulating layer;
a gate polysilicon covering a portion of the field insulating layer;
a gate electrode formed on the gate polysilicon;
a contact line penetrating the gate electrode, the gate polysilicon, and the field insulating layer; and
a high concentration second conductive first connection region formed in the first P-TOP region, wherein the high concentration second conductive first connection region is connected to a ground line to allow the first P-TOP region to be grounded.
2. The LDMOS device according to claim 1 , wherein the source region comprises a second P-TOP region into which a P-type high concentration impurity is ion-implanted.
3. The LDMOS device according to claim 1 , further comprising a ground line formed on the gate electrode.
4. The LDMOS device according to claim 1 , wherein the contact line is connected to an upper ground line.
5. The LDMOS device according to claim 1 , wherein the contact line comprises a plurality of continuous bar-type contact lines.
6. The LDMOS device according to claim 5 , wherein each of the bar-type contact lines comprises a plurality of hole types.