Photosensitive imaging device and method for forming semiconductor device

1. A method for forming a semiconductor device, comprising:

providing a first device layer formed on a first substrate, wherein a conductive top bonding pad layer is formed on the first device layer;

providing a continuous second device layer formed on a second substrate, wherein a continuous conductive adhesion layer is formed on the continuous second device layer;

bonding the first device layer with the second device layer, where the top bonding pad layer on the first device layer is directly connected with the conductive continuous adhesion layer on the continuous second device layer to electrically couple the first device with the continuous second device layer;

removing the second substrate;

selectively etching the continuous second device layer and the continuous conductive adhesion layer to form a groove array; and

filling up the groove array with an insulation material to form a plurality of second devices insulated with each other.

2. The method according to claim 1 , wherein the first device comprises a drive circuit comprising a plurality of drive circuits formed on the first substrate, neighboring drive circuits are isolated with by the insulation material; and the continuous second device comprises a continuous photosensitive unit layer; and the plurality of second devices comprise a plurality of photosensitive units arranged in a photosensitive unit array.

3. The method according to claim 1 , wherein a material of the top bonding pad layer and a material of the continuous conductive adhesion layer are selected based on a criterion that a heat budget generated in the process of bonding the first device layer with the continuous second device layer does not damage devices already formed.

4. The method according to claim 2 , wherein a processing temperature of the process of bonding the first device layer with the continuous second device layer is not higher than 440° C.

5. The method according to claim 1 , wherein the top bonding pad layer comprises Al, and the continuous conductive adhesion layer comprises Ge; or, the top bonding pad layer and the continuous conductive adhesion layer comprise Cu; or, a combination of the top bonding pad layer and the continuous conductive adhesion layer is Au—In or Au—Si.

6. The method according to claim 1 , wherein the top bonding pad layer is a continuous layer before the first device layer is bonded with the continuous second device layer; and the top bonding pad layer is developed into a plurality of top bonding pads isolated from each other in the process of selectively etching the continuous second device layer and the continuous conductive adhesion layer.

7. The method according to claim 1 , wherein the top bonding pad layer is developed into a plurality of top bonding pads before the first device layer is bonded with the continuous second device layer.

8. The method according to claim 2 , wherein the top bonding pad layer is developed into a plurality of top bonding pads before the first device layer is bonded with the continuous second device layer, each top bonding pad comprises two metal layers, an upper smaller metal layer used to be connected with the conductive adhesion layer, and a bottom larger metal layer used as a light-reflection layer.

9. The method according to claim 1 , wherein the second substrate is removed using a dry etch process, a wet etch process or a polishing process.

10. The method according to claim 2 , wherein the photosensitive unit layer is a photo diode layer, and a stop layer is formed between the second substrate and the photo diode layer to avoid damaging the photo diode layer in the process of removing the second substrate.

11. The method according to claim 2 , wherein the photosensitive unit layer is a photo diode layer, an ion-implanting layer is formed between the second substrate and the photo diode layer, and the process of removing the second substrate comprises separating the second substrate from the second device layer using the ion-implanting layer as an interface.

12. The method according to claim 1 , wherein the first substrate and the second substrate are selected from a group consisting of silicon substrate and silicon-on-insulator substrate.

13. The method according to claim 2 , wherein the photosensitive unit layer is a photo diode layer comprising a P-type doping layer and a N-type doping layer, or comprising a P-type doping layer, an I-type layer and a N-type doping layer, and the photo diode layer comprises Si, Ge, SiC, GeAs, InP or other semiconductor compounds.

14. The method according to claim 2 , wherein the photosensitive unit layer is a photo diode layer, the plurality of second devices isolated with each other are the plurality of photosensitive units, and the plurality of photosensitive units are a plurality of photo diodes; and after the plurality of photo diodes are formed, a front electrode, a light-filter layer and micro lenses are formed on the photo diodes, and the front electrode is a nonopaque conductive oxide layer or a heavily-doped Ge layer.

15. The method according to claim 2 , wherein after the groove array is formed and before the insulation material is filled into the groove array, isolating ions are implanted into the photosensitive unit layer, so that the isolating ions are doped into portions of the photosensitive unit layer which are close to sidewalls of the groove array.

16. The method according to claim 1 , wherein the first device layer is a drive circuit array and the second device layer is a memory array.

17. The method according to claim 16 , wherein the memory array comprises NAND memory units or NOR memory units.