High brightness light emitting diode structure
View Patent ↗A light-emitting diode structure comprising: a substrate; a light-emitting semiconductor stack on the substrate, wherein the light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; a first electrical pad on the substrate, wherein the first electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the first semiconductor layer; and a second electrical pad on the substrate, wherein the second electrical pad is apart from the light-emitting semiconductor stack and electrically connects to the second semiconductor layer, wherein the first electrical pad and the second electrical pad are not higher than the light-emitting semiconductor stack.
1. A light-emitting diode structure, comprising:
a substrate;
a first light-emitting semiconductor stack on the substrate, wherein the first light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different polarity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer;
a first electrode extension on the substrate, wherein the first electrode extension is apart from the first light-emitting semiconductor stack and electrically connects to the first semiconductor layer;
an insulating layer under the first electrode extension; and
a second electrode extension on the substrate and under the insulating layer, wherein the second electrode extension is apart from the first light-emitting semiconductor stack and electrically connects to the second semiconductor layer.
2. A light-emitting diode structure according to claim 1 , further comprises a first electrical conducting layer connecting the first electrode extension and the first semiconductor layer.
3. A light-emitting diode structure according to claim 1 , further comprises a second electrical conducting layer connecting the second electrode extension and the second semiconductor layer.
4. A light-emitting diode structure according to claim 1 , wherein the first electrode extension and the second electrode extension fail to overlap.
5. A light-emitting diode structure according to claim 1 , wherein the first electrode extension and the second electrode extension partially overlap.
6. A light-emitting diode structure according to claim 1 , further comprising a second light-emitting semiconductor stack,
wherein the first light-emitting semiconductor stack and the second light-emitting semiconductor stack are connected in parallel by the first electrode extension and the second electrode extension.
7. A light-emitting diode structure according to claim 6 , further comprises a trench between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first electrode extension and the second electrode extension are in the trench.
8. A light-emitting diode structure according to claim 1 , wherein the first electrode extension comprises a metallic structure and a reflective layer on the metallic structure.
9. A light-emitting diode structure according to claim 8 , wherein the reflectivity of the reflective layer is higher than that of the first electrode extension.
10. A light-emitting diode structure according to claim 8 , wherein the reflective layer comprises a distributed Bragg reflector (DBR).
11. A light-emitting diode structure according to claim 8 , wherein the reflective layer comprises a metallic material or a distributed Bragg reflector.
12. A light-emitting diode structure according to claim 1 , wherein the second electrode extension comprises a metallic structure and a reflective layer on the metallic structure.
13. A light-emitting diode structure according to claim 12 , wherein the reflectivity of the reflective layer is higher than that of the second electrode extension.
14. A light-emitting diode structure according to claim 12 , wherein the reflective layer comprises a distributed Bragg reflector (DBR).
15. A light-emitting diode structure according to claim 12 , wherein the reflective layer comprises a metallic material or a distributed Bragg reflector.
16. A light-emitting diode structure, comprising:
a substrate;
a first light-emitting semiconductor stack on the substrate, wherein the first light-emitting semiconductor stack comprises a first semiconductor layer, a second semiconductor layer with different electrical conductivity from the first semiconductor layer, and a light-emitting layer between the first semiconductor layer and the second semiconductor layer; and
an electrode extension on the substrate,
wherein the electrode extension is apart from the first light-emitting semiconductor stack and is electrically connected to the first semiconductor layer and
wherein the electrode extension comprises a metallic structure and a reflective layer on the metallic structure, and the reflective layer comprises metallic material or distributed Bragg reflector (DBR) structure.
17. A light-emitting diode structure according to claim 16 , wherein the metallic material comprises Al, Au, Pt, Ag, Rh or the alloy thereof.
18. A light-emitting diode structure according to claim 16 , wherein the reflective layer does not contact the substrate.
19. A light-emitting diode structure according to claim 16 , wherein the reflective layer is only formed on the metallic structure.
20. A light-emitting diode structure according to claim 19 , further comprising an electrical conducting layer between the substrate and the first light-emitting semiconductor stack, wherein the electrical conducting layer comprises metallic material or transparent conductive material.