Light emitting device package

1. A light emitting device package comprising:

a package body having a top-opened cavity disposed in at least a portion thereof;

a first electrode layer electrically isolated from the package body with an insulating layer interposed between the first electrode layer and package body, and a second electrode layer electrically isolated from the package body with the insulating layer interposed between the second electrode layer and package body, the first electrode layer and the second electrode layer being electrically isolated from each other at a bottom surface of the cavity;

a light emitting device placed on the bottom surface of the cavity configured to emit light through the open region of the cavity; and

a photo sensor placed on at least a portion of the package body at the outside of the cavity configured to measure output of the light emitting device,

wherein the photo sensor includes:

a photo sensor body;

a first insulating film;

a second insulating film placed on a first surface and a second surface of the photo sensor body; and

a third electrode layer,

wherein the third electrode layer includes a plurality of facing lines, the plurality of facing lines connected to one another via a plurality of connectors, and

wherein the plurality of connectors are alternately located at both ends of the facing lines.

2. The package according to claim 1 , wherein the photo sensor is configured to measure the strength of light emitted from the light emitting device, and the photo sensor is integrated with the package body and fabricated during a growth process of the package body.

3. The package according to claim 2 , wherein the cavity is at least a partial depressed portion of the package body, the package body includes a raised portion around the open region of the cavity, and the photo sensor is placed on the raised portion.

4. The package according to claim 2 , wherein the photo sensor body is disposed of polycrystalline silicon, and a thickness of the photo sensor body is within a range of 0.5 μm to 5 μm.

5. The package according to claim 2 , wherein at least one of the first insulating film or the second insulating film is disposed of Si 3 N 4 , and a thickness of the insulating film is within a range 30 nm to 100 nm.

6. The package according to claim 2 , wherein the photo sensor further includes a light sensing portion configured to electrically connect the photo sensor body and the third electrode layer to each other.

7. The package according to claim 2 , wherein the photo sensor includes a first area coming into contact with the package body, and a second area facing the bottom surface of the cavity.

8. The package according to claim 7 , wherein the plurality of facing lines are arranged as a plurality of parallel facing lines in the second area of the photo sensor.

9. The package according to claim 3 , wherein the photo sensor takes the form of a cantilever, a part of which is secured to the raised portion and another part of which is exposed to the cavity.

10. A light emitting device package comprising:

a package body having a top-opened cavity disposed in at least a portion thereof and a raised portion around the open region of the cavity;

a first electrode layer electrically isolated from the package body with an insulting layer interposed between the first electrode layer and package body, and a second electrode layer electrically isolated from the package body with the insulating layer interposed between the second electrode layer and package body, the first electrode layer and the second electrode layer being electrically isolated from each other at the bottom surface of the cavity;

a light emitting device placed on the bottom surface of the cavity configured to emit light through the open region of the cavity; and

a semiconductor layer placed on the raised portion, and

wherein the semiconductor layer includes:

a body;

a first insulating film;

a second insulating film placed on a first surface and a second surface of the body; and

a third electrode layer,

wherein the third electrode layer includes a plurality of facing lines, the plurality of facing lines connected to one another via a plurality of connectors, and

wherein the plurality of connectors are alternately located at both ends of the facing lines.