Semiconductor device and a method of manufacturing the same
In a semiconductor chip constituting an LCD driver, a mark is formed in an alignment mark formation region over a semiconductor substrate. The mark is formed in the same layer as that of an uppermost layer wiring (third layer wiring) in an integrated circuit formation region. Then, in the lower layer of the mark and a background region surrounding the mark, patterns are formed. At this time, the pattern P 1 a is formed in the same layer as that of a second layer wiring and the pattern Pib is formed in the same layer as that of a first layer wiring. Further, the pattern P 2 is formed in the same layer as that of a gate electrode, and the pattern P 3 is formed in the same layer as that of an element isolation region.
1. A semiconductor device comprising:
a semiconductor substrate including an alignment mark formation region and an integrated circuit formation region;
a plurality of element isolations formed in the semiconductor substrate;
a MISFET formed in the integrated circuit formation region and having a gate electrode;
a plurality of second patterns formed in the alignment mark formation region;
a first interlayer insulating film formed over the semiconductor substrate so as to cover the MISFET and the second patterns;
a first wiring formed over the first insulating film of the integrated circuit formation region and electrically connected to the MISFET;
a plurality of first patterns formed over the first insulating film of the alignment mark formation region;
a second interlayer insulating film formed over the first interlayer insulating film so as to cover the first wiring and the first patterns;
an uppermost wiring formed over the second insulating film of the integrated circuit formation region and electrically connected to the first wiring; and
an alignment mark formed over the second insulating film of the alignment mark formation region,
wherein the alignment mark is formed at the same layer as the uppermost wiring,
wherein the second patterns are formed at the same layer as the gate electrode,
wherein the first patterns are formed at the same layer as the first wiring,
wherein the alignment mark formation is a region on which the MISFET is not formed, and
wherein the first and second patterns are not electrically connected to the MISFET.
2. A semiconductor device according to claim 1 , wherein the first and second patterns are dot-shaped, respectively.
3. A semiconductor device according to claim 1 , wherein the first and second patterns are arranged directly under the alignment mark.
4. A semiconductor device according to claim 1 , wherein the semiconductor device is an LCD driver for a liquid crystal display device.
5. A semiconductor device according to claim 1 ,
wherein a guard ring, which includes wirings the same as the first wiring, the second wiring, and the uppermost wiring, is formed so as to surround the alignment mark formation region and the integrated circuit formation region,
wherein the alignment mark formation region is arranged between the guard ring and the integrated circuit formation region, and
wherein the integrated circuit formation region is not arranged between the alignment mark formation region and the guard ring.
6. A semiconductor device comprising:
a semiconductor substrate including an alignment mark formation region and an integrated circuit formation region;
a plurality of element isolations formed in the semiconductor substrate;
a MISFET formed in the integrated circuit formation region and having a gate electrode;
a plurality of third patterns formed in the alignment mark formation region;
a first interlayer insulating film formed over the semiconductor substrate so as to cover the MISFET and the third patterns;
a first wiring formed over the first insulating film of the integrated circuit formation region and electrically connected to the MISFET;
a plurality of first patterns formed over the first insulating film of the alignment mark formation region;
a second interlayer insulating film formed over the first interlayer insulating film so as to cover the first wiring and the first patterns;
an uppermost wiring formed over the second insulating film of the integrated circuit formation region and electrically connected to the first wiring; and
an alignment mark formed over the second insulating film of the alignment mark formation region,
wherein the alignment mark is formed at the same layer as the uppermost wiring,
wherein the third patterns are formed at the same layer as the element isolations,
wherein the first patterns are formed at the same layer as the first wiring,
wherein the alignment mark formation is a region on which the MISFET is not formed, and
wherein the first and third patterns are not electrically connected to the MISFET.
7. A semiconductor device according to claim 6 , wherein the first and third patterns are dot-shaped, respectively.
8. A semiconductor device according to claim 6 , wherein the first and third patterns are arranged directly under the alignment mark.
9. A semiconductor device according to claim 6 , wherein the semiconductor device is an LCD driver for a liquid crystal display device.
10. A semiconductor device according to claim 6 ,
wherein a guard ring, which includes wirings the same as the first wiring, the second wiring, and the uppermost wiring, is formed so as to surround the alignment mark formation region and the integrated circuit formation region,
wherein the alignment mark formation region is arranged between the guard ring and the integrated circuit formation region, and
wherein the integrated circuit formation region is not arranged between the alignment mark formation region and the guard ring.
11. A semiconductor device comprising:
a semiconductor substrate including an alignment mark formation region and an integrated circuit formation region;
a plurality of element isolations formed in the semiconductor substrate;
a MISFET formed in the integrated circuit formation region and having a gate electrode;
a plurality of second patterns formed in the alignment mark formation region;
a plurality of third patterns formed in the alignment mark formation region;
a first interlayer insulating film formed over the semiconductor substrate so as to cover the MISFET, the second patterns and the third patterns;
a first wiring formed over the first insulating film of the integrated circuit formation region and electrically connected to the MISFET;
a plurality of first patterns formed over the first insulating film of the alignment mark formation region;
a second interlayer insulating film formed over the first interlayer insulating film so as to cover the first wiring and the first patterns;
an uppermost wiring formed over the second insulating film of the integrated circuit formation region and electrically connected to the first wiring; and
an alignment mark formed over the second insulating film of the alignment mark formation region,
wherein the alignment mark is formed at the same layer as the uppermost wiring,
wherein the third patterns are formed at the same layer as the element isolations,
wherein the second patterns are formed at the same layer as the gate electrode,
wherein the first patterns are formed at the same layer as the first wiring,
wherein the alignment mark formation is a region on which the MISFET is not formed, and
wherein the first, second and third patterns are not electrically connected to the MISFET.
12. A semiconductor device according to claim 11 , wherein the first, second and third patterns are dot-shaped, respectively.
13. A semiconductor device according to claim 11 , wherein the first, second and third patterns are arranged directly under the alignment mark.
14. A semiconductor device according to claim 11 , wherein the semiconductor device is an LCD driver for a liquid crystal display device.
15. A semiconductor device according to claim 11 ,
wherein a guard ring, which includes wirings the same as the first wiring, the second wiring, and the uppermost wiring, is formed so as to surround the alignment mark formation region and the integrated circuit formation region,
wherein the alignment mark formation region is arranged between the guard ring and the integrated circuit formation region, and
wherein the integrated circuit formation region is not arranged between the alignment mark formation region and the guard ring.