Polymeric materials for use in metal-oxide-semiconductor field-effect transistors
View Patent ↗Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.
1. An optical, electronic or optoelectronic device comprising a thin film transistor, the thin film transistor comprising:
a substrate;
a channel layer comprising a metal oxide semiconductor comprising a front surface and a back surface;
source and drain electrodes in contact with the channel layer;
a gate electrode;
a gate dielectric layer disposed between the channel layer and the gate electrode; and
a passivation layer in contact with the back surface of the channel layer;
wherein at least one of the gate dielectric layer and the passivation layer comprises a polysulfone-based material comprising a polymer having the formula:
wherein:
W is —Ar[—Y—Ar] q —, wherein:
Ar, at each occurrence, independently is a divalent C 6-18 aryl group;
Y, at each occurrence, independently is selected from the group consisting of —O—, —S—, —(CR′R″) r —, —C(O)—, and a covalent bond, wherein R′ and R″, at each occurrence, independently are selected from the group consisting of H, a halogen, CN, a C 1-10 alkyl group, and a C 1-10 haloalkyl group; and r is selected from the group consisting of 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10; and
q is selected from the group consisting of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10;
Z and Z′ independently are selected from the group consisting of —O—, —S—, and —Se—;
L and L′, at each occurrence, independently are selected from the group consisting of —O—, —S—, a divalent C 1-10 alkyl group, a divalent C 6-18 aryl group, and a covalent bond;
T and T′, at each occurrence, independently are Q or R, wherein:
Q is a crosslinkable group comprising an ethenyl moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, and an epoxy moiety; and
R, at each occurrence, is selected from the group consisting of H, a halogen, a C 1-10 alkyl group, a C 1-10 haloalkyl group, and a C 6-10 aryl group optionally substituted with 1 to 5 substituents independently selected from the group consisting of a halogen and CN;
p and p′ independently are selected from the group consisting of 1, 2, 3 and 4; and
m and n are real numbers representing mole fractions ranging from 0 to 1, wherein the sum of m and n is about 1.
2. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having formula (I):
wherein W, Z, and Z′ are as defined in claim 1 .
3. The device of claim 2 , wherein W is selected from the group consisting of —Ar—, —Ar[—O—Ar] q —, —Ar—S—Ar—, —Ar—CH 2 —Ar—, —Ar—C(CH 3 ) 2 —Ar—, —Ar—C(CF 3 ) 2 —Ar—, —Ar—C(O)—Ar—, and —Ar[—Ar] q —, wherein q is 1, 2, 3 or 4, and each Ar independently is a divalent phenyl group or a divalent naphthalenyl group.
4. The device of claim 2 , wherein W is one of:
5. The device of claim 2 , wherein the polymer having formula (I) is selected from the group consisting of:
6. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having formula (II):
wherein:
L, at each occurrence, independently is selected from the group consisting of —O—, —S—, a divalent C 1-10 alkyl group, a divalent C 6-18 aryl group, and a covalent bond;
T is R, wherein R, at each occurrence, is selected from the group consisting of H, a halogen, a C 1-10 alkyl group, a C 1-10 haloalkyl group, and a C 6-10 aryl group optionally substituted with 1 to 5 substituents independently selected from the group consisting of a halogen and CN;
p is 1, 2, 3 or 4; and
W, Z and Z′ are as defined in claim 1 , provided that when T is H, L is not a covalent bond.
7. The device of claim 6 , wherein the polymer having formula (II) is selected from the group consisting of:
8. The device of claim 7 , wherein W is a divalent diphenyl group including at least one substituted phenyl group.
9. The device of claim 8 , wherein the polymer having formula (II) is selected from the group consisting of:
10. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having formula (III):
wherein:
L, at each occurrence, independently is selected from the group consisting of —O—, —S—, a divalent C 1-10 alkyl group, a divalent C 6-18 aryl group, and a covalent bond;
Q is a crosslinkable group comprising an ethenyl moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, or an epoxy moiety;
R is selected from the group consisting of H, a halogen, a C 1-10 alkyl group, a C 1-10 haloalkyl group, and a C 6-10 aryl group optionally substituted with 1 to 5 substituents independently selected from the group consisting of a halogen and CN;
0≦m′<1; and
W, Z and Z′ are as defined in claim 1 .
11. The device of claim 10 , wherein Q is selected from the group consisting of:
wherein R 1 is H or a C 1-20 alkyl group.
12. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having formula (V):
wherein:
L′, at each occurrence, independently is selected from the group consisting of —O—, —S—, a divalent C 1-10 alkyl group, a divalent C 6-18 aryl group, and a covalent bond;
Q is a crosslinkable group comprising an ethenyl moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, or an epoxy moiety;
R is selected from the group consisting of H, a halogen, a C 1-10 alkyl group, a C 1-10 haloalkyl group, and a C 6-10 aryl group optionally substituted with 1 to 5 substituents independently selected from the group consisting of a halogen and CN;
0≦n′<1.
13. The device of claim 12 , wherein L′ is —O— or a covalent bond; and Q is selected from the group consisting of:
wherein R 1 is H or a C 1-20 alkyl group.
14. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having the formula:
wherein Q, W, Z, Z′, p, p′, m and n are as defined in claim 1 .
15. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having the formula:
wherein 0<n<1, and Q is as defined in claim 1 .
16. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having the formula:
wherein 0<n<1, and L′, Q, T′, W, Z, Z′ and p′ are as defined in claim 1 .
17. The device of claim 16 , wherein Q is selected from the group consisting of:
wherein R 1 is selected from the group consisting of H, F, CN, a C 1-10 alkyl group, a C 1-10 haloalkyl group, and a C 1-10 alkoxy group.
18. The device of claim 1 , wherein the polysulfone-based material comprises a polymer having the formula:
19. The device of claim 1 , wherein the passivation layer comprises the polysulfone-based material.
20. The device of claim 1 , wherein the channel layer comprises a metal oxide semiconductor comprising indium-gallium-zinc oxide.