Coating materials for oxide thin film transistors

1. A metal oxide thin film transistor comprising a substrate, a gate electrode over the substrate, a gate dielectric over the gate electrode, a metal oxide thin film semiconductor over the gate dielectric, a source electrode and a drain electrode over the metal oxide thin film semiconductor, wherein the source electrode and the drain electrode is separated by a channel area comprising an exposed surface of the metal oxide thin film semiconductor, and a coating material over the channel area and the source and drain electrodes, wherein the coating material comprises a first component comprising a polymerizable component, a crosslinkable component, and/or a polymer, and a second component comprising a stabilizing agent capable of facilitating desorption of one or more low-molecular weight molecules from the channel and having the formula:

HG-SG-TG,

wherein:

HG is selected from the group consisting of a) —Si(R 1 ) 3 , b) —P(O)(OR 2 ) 2 , c) —COOH, d) —NCO, and e) —CNO; wherein R 1 and R 2 , at each occurrence, independently are selected from the group consisting of a) H, b) a halogen, c) a C 1-20 alkoxy group and d) a C 1-20 alkyl group;

SG is selected from the group consisting of a) a covalent bond, b) a divalent C 1-20 alkyl group, c) a divalent C 2-20 alkenyl group, d) a divalent C 2-20 alkynyl group, e) a divalent C 1-20 alkoxy group, f) a divalent C 1-20 alkylthio group, g) a divalent C 1-20 haloalkyl group, h) a divalent C 3-14 cycloalkyl group, i) a divalent C 6-14 aryl group, j) a divalent 3-14 membered cycloheteroalkyl group, k) a divalent 5-14 membered heteroaryl group, l) a divalent oxirane, and m) a combination of any two or more of a)-m), wherein each of the C 1-20 alkyl group, the C 2-20 alkenyl group, the C 2-20 alkynyl group, the C 1-20 alkoxy group, the C 1-20 alkylthio group, the C 3-14 cycloalkyl group, the C 6-14 aryl group, the 3-14 membered cycloheteroalkyl group, and the 5-14 membered heteroaryl group optionally is substituted with 1-5 groups selected from the group consisting of halogen, —CN, and a C 1-20 haloalkyl group; and

TG is selected from the group consisting of a) H, b) halogen, c) —CN, d) —NO 2 , e) —OR 3 , f) —SH, g) —N(R 4 ) 2 , h) —CHO, i) —C(O)R 3 , j) —C(O)OR 3 , k) —C(O)N(R 4 ) 2 , l) a C 1-20 alkyl group, m) a C 1-20 haloalkyl group, n) C 2-20 alkenyl group, o) a C 2-20 alkynyl group, p) a C 6-14 aryl group, q) an oxiranyl group and r) a 5-14 membered heteroaryl group, wherein R 3 independently is selected from the group consisting of a) H, b) a C 1-20 alkyl group, and c) a C 1-20 haloalkyl group; and R 4 , at each occurrence, independently is selected from the group consisting of a) H, b) a C 1-20 alkyl group, c) a —C 1-20 alkyl —NH 2 ; and each of the C 6-14 aryl group and the 5-14 membered heteroaryl group optionally is substituted with 1-5 groups selected from the group consisting of a) halogen, b) a C 1-20 alkyl group, c) a C 1-20 haloalkyl group and d) a C 1-20 alkoxy group.

2. The metal oxide thin film transistor of claim 1 , wherein the metal oxide thin film semiconductor comprises IGZO.

3. The metal oxide thin film transistor of claim 2 , wherein the metal oxide thin film semiconductor is formed by a physical vapor deposition method.

4. The metal oxide thin film transistor of claim 2 , wherein the metal oxide thin film semiconductor is formed by a solution-phase deposition method.

5. The metal oxide thin film transistor of claim 1 , wherein the stabilizing agent is selected from the group consisting of a silane, a cyanate, and an isocyanate.

6. The metal oxide thin film transistor of claim 5 , wherein the silane is selected from the group consisting of a trichlorosilane, a trimethoxysilane, and a triethoxysilane.

7. The metal oxide thin film transistor of claim 1 , wherein the stabilizing agent is a phosphonic acid.

8. The metal oxide thin film transistor of claim 1 , wherein the stabilizing agent comprises a spacer group (SG) comprising a hydrocarbon.

9. The metal oxide thin film transistor of claim 1 , wherein the gate dielectric comprises silicon oxide or silicon nitride.

10. The metal oxide thin film transistor of claim 1 , wherein the gate dielectric comprises an organic material.

11. The metal oxide thin film transistor of claim 1 , wherein the substrate comprises a flexible plastic substrate.

12. A metal oxide thin film transistor comprising a substrate, a gate electrode over the substrate, a gate dielectric over the gate electrode, a metal oxide thin film semiconductor over the gate dielectric, a source electrode and a drain electrode over the metal oxide thin film semiconductor, wherein the source electrode and the drain electrode is separated by a channel area comprising an exposed surface of the metal oxide thin film semiconductor, and a coating material over the channel area and the source and drain electrodes, wherein the coating material comprises a first component comprising a polymerizable component, a crosslinkable component, and/or a polymer, and a second component comprising a stabilizing agent capable of facilitating desorption of one or more low-molecular weight molecules from the channel and having formula:

wherein:

HG is selected from the group consisting of a) —Si(R 1 ) 3 , b) —P(O)(OR 2 ) 2 , c) —COOH, d) —NCO, and e) —CNO; wherein R 1 and R 2 , at each occurrence, independently is selected from the group consisting of a) H, b) a halogen, c) a C 1-20 alkoxy group and d) a C 1-20 alkyl group;

SG is a divalent C 1-20 alkyl group;

Z is selected from the group consisting of a C 1-10 alkyl group, a C 1-10 haloalkyl group, a substituted or unsubstituted C 6-14 aryl group, and a substituted or unsubstituted 5-14 membered heteroaryl group;

R a and R b independently are selected from the group consisting of H, F, Cl, CN, CH 3 , and CF 3 ;

R c and R d independently are selected from the group consisting of H, a C 1-10 alkyl group, a C 1-10 haloalkyl group, a substituted or unsubstituted C 6-14 aryl group, and a substituted or unsubstituted 5-14 membered heteroaryl group; and

q and t independently are 0 or 1.

13. A metal oxide thin film transistor comprising a substrate, a gate electrode over the substrate, a gate dielectric over the gate electrode, a metal oxide thin film semiconductor over the gate dielectric, a source electrode and a drain electrode over the metal oxide thin film semiconductor, wherein the source electrode and the drain electrode is separated by a channel area comprising an exposed surface of the metal oxide thin film semiconductor, and a coating material over the channel area and the source and drain electrodes, wherein the coating material comprises a first component comprising a polymerizable component, a crosslinkable component, and/or a polymer, and a second component comprising n agent selected from the group consisting of:

14. A metal oxide thin film transistor comprising a substrate, a gate electrode over the substrate, a gate dielectric over the gate electrode, a metal oxide thin film semiconductor over the gate dielectric, a source electrode and a drain electrode over the metal oxide thin film semiconductor, wherein the source electrode and the drain electrode is separated by a channel area comprising an exposed surface of the metal oxide thin film semiconductor, and a coating material over the channel area and the source and drain electrodes, wherein the coating material comprises a first component comprising a polymerizable component, a crosslinkable component, and/or a polymer, and a second component comprising a stabilizing agent capable of facilitating desorption of one or more low-molecular weight molecules from the channel and having a formula selected from the group consisting of:

wherein:

HG is selected from the group consisting of a) -L-Y—Si(R 1 ) 3 , b) -L-Y—P(O)(OR 2 ) 2 , c) -L-Y—COOH, d) -L-Y—NCO, and e) -L-Y—CNO; wherein R 1 and R 2 , at each occurrence, independently are selected from the group consisting of a) H, b) a halogen, c) a C 1-20 alkoxy group and d) a C 1-20 alkyl group; L is selected from the group consisting of a) —O—, b) —C(O)—, c) —OC(O)—, d) —C(O)O—, e) —NR 4 —, f) —C(O)NR 4 —, g) —NR 4 C(O)—, and h) a covalent bond, wherein R 4 is selected from the group consisting of a) H, b) a C 1-20 alkyl group, c) a —C 1-20 alkyl —NH 2 ; and Y is selected from the group consisting of a divalent alkyl group, a divalent C 6-14 aryl group, and a covalent bond; and

TG has the formula:

wherein:

L is selected from the group consisting of a) —O—, b) —C(O)—, c) —OC(O)—, d) —C(O)O—, e) —NR 4 —, f) —C(O)NR 4 —, g) —NR 4 C(O)—, and h) a covalent bond, wherein R 4 is selected from the group consisting of a) H, b) a C 1-20 alkyl group, c) a —C 1-20 alkyl —NH 2 ;

Z is selected from the group consisting of a C1-10 alkyl group, a C1-10 haloalkyl group, a substituted or unsubstituted C6-14 aryl group, and a substituted or unsubstituted 5-14 membered heteroaryl group;

R a and R b independently are selected from the group consisting of H, F, Cl, CN, CH 3 , and CF 3 ;

R c and R d independently are selected from the group consisting of H, a C 1-10 alkyl group, a C 1-10 haloalkyl group, a substituted or unsubstituted C 6-14 aryl group, and a substituted or unsubstituted 5-14 membered heteroaryl group; and

t is 0 or 1.

15. The metal oxide thin film transistor of claim 14 , wherein the stabilizing agent is selected from the group consisting of:

16. A metal oxide thin film transistor comprising a substrate, a gate electrode over the substrate, a gate dielectric over the gate electrode, a metal oxide thin film semiconductor over the gate dielectric, a source electrode and a drain electrode over the metal oxide thin film semiconductor, wherein the source electrode and the drain electrode is separated by a channel area comprising an exposed surface of the metal oxide thin film semiconductor, and a coating material over the channel area and the source and drain electrodes, wherein the coating material comprises a polymerizable or crosslinkable component and a stabilizing agent, wherein the stabilizing agent forms a self-assembled layer directly in contact with the channel and the polymerizable or crosslinkable component forms a polymerized or crosslinked matrix over the self-assembled layer.

17. The metal oxide thin film transistor of claim 16 , wherein the stabilizing agent comprises from about 0.01% to about 30% by weight of the polymerizable or crosslinkable component in the coating material.

18. The metal oxide thin film transistor of claim 16 , wherein the coating material comprises a crosslinkable component comprising is-a polymer, a small molecule, or a mixture thereof.

19. The metal oxide thin film transistor of claim 16 , wherein the polymerizable or crosslinkable component is selected from the group consisting of a cinnamate, a diene, an acrylate, and an epoxide.

20. The metal oxide thin film transistor of claim 16 , wherein the metal oxide thin film semiconductor comprises IGZO.