Laser processing for high-efficiency thin crystalline silicon solar cell fabrication
A method for making a back contact solar cell. Base isolation regions are formed in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns. Pulsed laser ablation of a substance on the crystalline silicon back contact solar cell substrate is performed to form base openings, wherein the substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide. Emitter regions are selectively doped and base regions are selectively doped. Contact openings are formed for the selectively doped base regions and the selectively doped emitter regions. Metallization is formed on the selectively doped base regions and the selectively doped emitter regions.
1. A method for making a back contact solar cell, said method comprising the steps of:
forming base isolation regions in a crystalline silicon back contact solar cell substrate having a substrate thickness in the range of approximately 1 micron to 100 microns;
performing pulsed laser ablation of a substance on said crystalline silicon back contact solar cell substrate to form base openings, wherein said substance is at least one of silicon oxide, silicon nitride, aluminum oxide, silicon oxynitride, or silicon carbide;
selectively doping emitter regions;
selectively doping base regions;
forming contact openings for said selectively doped base regions and said selectively doped emitter regions; and
selectively forming metallization on said selectively doped base regions and said selectively doped emitter regions.
2. The method of claim 1 , wherein said step of performing pulsed laser ablation is carried out using a picoseconds pulse UV laser.
3. The method of claim 1 , wherein said step of forming base isolation regions in said crystalline silicon back contact solar cell substrate is carried out via a laser silicon ablation process and using a pulsed laser having a wavelength of approximately 800 nm or less and a pulse width less than approximately 100 picoseconds.
4. The method of claim 3 , wherein said wavelength is approximately 355 nm or less.
5. The method of claim 4 , wherein said pulse width is less than approximately 20 picoseconds.
6. The method of claim 1 , wherein said step of forming base isolation regions in said crystalline silicon back contact solar cell substrate is carried out via pulsed laser ablation of a deposited borosilicate glass layer.
7. The method of claim 1 , wherein said step of selectively doping emitter regions is performed via a laser doping process.
8. The method of claim 7 , wherein said step of selectively doping emitter regions via a laser doping process is performed using a nanoseconds pulse green wavelength laser.
9. The method of claim 7 , wherein said step of selectively doping emitter regions via a laser doping process is performed using a nanoseconds pulse IR wavelength laser.
10. The method of claim 1 , wherein said step of selectively doping base regions is performed via a laser doping process.
11. The method of claim 10 , wherein said step of selectively doping base regions via a laser doping process is performed using a nanoseconds pulse green wavelength laser.
12. The method of claim 10 , wherein said step of selectively doping base regions via a laser doping process is performed using a nanoseconds pulse IR wavelength laser.
13. The method of claim 1 , wherein said step of selectively doping emitter regions is performed via a laser doping process and step of selectively doping base regions is performed via a laser doping process.
14. The method of claim 1 , wherein said step of forming contact openings for said selectively doped base regions and said selectively doped emitter regions is performed via laser ablation.
15. The method of claim 1 , wherein said step of selectively forming metallization is performed using a physical vapor deposition process and a laser ablation patterning process.
16. The method of claim 1 , wherein said substance is silicon oxide.
17. The method of claim 16 , wherein said silicon oxide is thermal silicon oxide.
18. The method of claim 16 , wherein said silicon oxide is deposited undoped silicate glass.
19. The method of claim 1 , wherein said metallization is at least aluminum.