EEPROM MEMORY UNIT AND EEPROM MEMORY DEVICE
An EEPROM memory unit is disclosed. The EEPROM memory unit includes a first memory cell, a second memory cell, and a word line controller. The first memory cell includes a source that is connected to a first bit line of the EEPROM memory unit and a drain that is connected to a source of the word line controller. The word line controller includes a drain that is connected to a source of the second memory cell. The second memory cell includes a drain that is connected to a second bit line of the EEPROM memory unit. An EEPROM memory device is also disclosed.
1 . An EEPROM memory unit, comprising a first memory cell, a second memory cell, and a word line controller, wherein the first memory cell comprises a source connected to a first bit line of the EEPROM memory unit and a drain connected to a source of the word line controller, the word line controller comprises a drain connected to a source of the second memory cell, and the second memory cell comprises a drain connected to a second bit line of the EEPROM memory unit.
2 . The EEPROM memory unit according to claim 1 , wherein the first memory cell comprises a first control gate; the second memory cell comprises a second control gate; and the word line controller comprises a gate connected to a word line of the EEPROM memory unit.
3 . The EEPROM memory unit according to claim 2 , wherein one of the first memory cell and the second memory cell is configured as a spare memory cell.
4 . The EEPROM memory unit according to claim 2 , wherein the first memory cell and the second memory cell are configured to be erased at the same time.
5 . An EEPROM memory device, comprising:
a plurality of byte arrays, each byte array comprising a plurality of EEPROM memory units according to claim 2 , being arranged in an array, and a word-line/control-gate switching unit connected to each of the first control gates, second control gates and word lines of each byte array.
6 . The EEPROM memory device according to claim 5 , wherein the word-line/control-gate switching unit is configured to control each of the first control gates, second control gates and word lines of each byte array during programming and erasing operations so as to separate the plurality of byte arrays from one another.
7 . The EEPROM memory device according to claim 5 , wherein the word-line/control-gate switching unit comprises a transistor array.
8 . An EEPROM memory device, comprising:
a plurality of byte arrays, each byte array comprising a plurality of EEPROM memory units according to claim 2 being arranged in an array of a plurality of rows and a plurality of columns, wherein the EEPROM memory units arranged in a same row are configured to have the first control gates interconnected, the second control gates interconnected and the word lines interconnected; and the EEPROM memory units arranged in a same column are configured to have the first bit lines interconnected and the second bit lines interconnected; and
a word-line/control-gate switching unit connected to each of the first control gates, second control gates and word lines of each byte array.
9 . The EEPROM memory device according to claim 8 , wherein the word-line/control-gate switching unit is configured to control each of the first control gates, second control gates and word lines of each byte array during programming and erasing operations so as to separate the plurality of byte arrays from one another.
10 . The EEPROM memory device according to claim 8 , wherein the word-line/control-gate switching unit comprises a transistor array.