Magnetoelectric composites
View Patent ↗Disclosed is a magnetoelectric (ME) composite including both a piezoelectric material and a magnetostrictive material, wherein a piezoelectric single crystal material having high piezoelectric properties is used as the piezoelectric material, and a metal magnetostrictive material having high magnetostrictive properties is used as the magnetostrictive material, thus achieving an ME composite having a layered structure via adhesion. When the ME layered composite is manufactured such that a <011> crystal orientation of the piezoelectric single crystal material is set to a thickness direction, high ME voltage coefficient, which is at least doubled, compared to a conventional <001> crystal orientation, can be obtained, and such an effect is further maximized in the resonance of the composite.
1. A magnetoelectric composite, comprising at least one piezoelectric material layer composed of a piezoelectric material and at least one magnetostrictive material layer composed of a magnetostrictive material, which are stacked, wherein the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.
2. The magnetoelectric composite of claim 1 , wherein a crystal structure of the single crystals is a perovskite structure.
3. The magnetoelectric composite of claim 1 , wherein the single crystals are a solid solution comprising xPb (A, B)O3+(1−x)PbTiO3 (wherein x is a molar fraction, 0<x<1), in which A is any one or a plurality of elements selected from the group consisting of Zn, Mg, Ni, Lu, In and Sc, and B is any one or a plurality of elements selected from the group consisting of Nb, Ta, Mo and W.
4. The magnetoelectric composite of claim 1 , wherein the single crystals are any one selected from among Pb (Mg 1/3 Nb 2/3 )O 3 —PbTiO 3 (PMN-PT), Pb (Zn 1/3 Nb 2/3 )O 3 —PbTiO 3 (PZN-PT), and BaTiO 3 .
5. The magnetoelectric composite of claim 1 , wherein the magnetostrictive material is any one selected from among ferrite-based ceramics, Ni, Terfenol, Gafenol, Fe and Metglas.
6. The magnetoelectric composite of claim 1 , wherein the magnetostrictive material layer and the piezoelectric material layer are alternately stacked.
7. The magnetoelectric composite of claim 1 , wherein a ratio between thickness, width and length of the magnetoelectric composite is adjusted, so that a resonance-antiresonance frequency range of the magnetoelectric composite becomes variable.
8. The magnetoelectric composite of claim 1 , wherein a thickness ratio of the piezoelectric material layer and the magnetostrictive material layer is 0.4˜2.
9. A magnetoelectric composite, comprising:
a first magnetostrictive material layer composed of a magnetostrictive material;
a piezoelectric material layer composed of a piezoelectric material; and
a second magnetostrictive material layer composed of a magnetostrictive material,
wherein the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.
10. The magnetoelectric composite of claim 9 , wherein a crystal structure of the single crystals is a perovskite structure.
11. The magnetoelectric composite of claim 9 , wherein the single crystals are a solid solution comprising xPb (A, B)O3+(1−x)PbTiO3 (wherein x is a molar fraction, 0<x<1), in which A is any one or a plurality of elements selected from the group consisting of Zn, Mg, Ni, Lu, In and Sc, and B is any one or a plurality of elements selected from the group consisting of Nb, Ta, Mo and W.
12. The magnetoelectric composite of claim 9 , wherein the single crystals are any one selected from among Pb (Mg 1/3 Nb 2/3 )O 3 —PbTiO 3 (PMN-PT), Pb (Zn 1/3 Nb 2/3 )O 3 —PbTiO 3 (PZN-PT), and BaTiO 3 .
13. The magnetoelectric composite of claim 9 , wherein the magnetostrictive material is any one selected from among ferrite-based ceramics, Ni, Terfenol, Gafenol, Fe and Metglas.
14. The magnetoelectric composite of claim 9 , wherein a thickness ratio of the piezoelectric material layer and the first or second magnetostrictive material layer is 0.4˜2.
15. The magnetoelectric composite of claim 9 , wherein a ratio between thickness, width and length of the magnetoelectric composite is adjusted, so that a resonance-antiresonance frequency range of the magnetoelectric composite becomes variable.
16. An electronic device, which comprises a magnetoelectric composite having a magnetoelectric effect and comprising at least one piezoelectric material layer composed of a piezoelectric material and at least one magnetostrictive material layer composed of a magnetostrictive material, which are stacked and in which the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.
17. The electronic device of claim 16 , wherein the electronic device is any one selected from among a spintronic device, an ultrahigh-speed information storage device, a magnetic-electric sensor, a magnetic sensor, an electric sensor, an optoelectronic device, a microwave electronic device, a magnetic-electric transducer, an electric-magnetic transducer, a magnetic driving energy harvester, and a magnetic-mechanical composite energy harvester.
18. The electronic device of claim 17 , wherein the electronic device utilizes the magnetoelectric effect.
19. The electronic device of claim 18 , wherein a ratio between thickness, width and length of the magnetoelectric composite is adjusted, so that a resonance-antiresonance frequency range of the magnetoelectric composite becomes variable.
20. A method of manufacturing a magnetoelectric composite, comprising:
preparing at least one piezoelectric material layer composed of a piezoelectric material and at least one magnetostrictive material layer composed of a magnetostrictive material; and
alternately stacking the piezoelectric material layer and the magnetostrictive material layer, wherein the piezoelectric material layer is configured such that <011> oriented single crystals are stacked in a thickness direction with <100> direction and <0 1 1> direction of the single crystals being longitudinal direction and width direction, respectively wherein the magnetoelectric composite has multiple longitudinal and width direction in-plane resonance vibration mode corresponding to longitudinal, torsional and diagonal resonance mode.
21. The method of claim 20 , further comprising applying a conductive epoxy adhesive onto a surface for bonding the piezoelectric material layer and the magnetostrictive material layer to each other, after preparing.