Semiconductor device and electronic apparatus including multilayer insulation film

1. A semiconductor device comprising:

a transistor including an oxide semiconductor film;

a high resistance film formed on the transistor;

a first insulating film formed on the high resistance film and covering the oxide semiconductor film, and the first insulating film including a first resin material;

a second insulating film including a second resin material, the second insulating film being laminated on the first insulating film; and

a third insulating film including a third resin material, the third insulating film being laminated on the second insulating film,

wherein a polarity of the second resin material is greater than a polarity of the third resin material, and the polarity of the third resin material is greater than a polarity of the first resin material.

2. The semiconductor device according to claim 1 , wherein a source-drain electrode of the transistor is electrically connected to the oxide semiconductor film through a connection hole in the first insulating film and the second insulating film.

3. The semiconductor device according to claim 1 , wherein

the oxide semiconductor film includes a channel region and a source-drain region that is adjacent to the channel region and has resistivity lower than resistivity of the channel region, and

the transistor includes a gate electrode facing the channel region.

4. The semiconductor device according to claim 1 , wherein

the first resin material is one or more selected from a group consisting of polysiloxane, polyolefin-based resins, polyethylene-based resins, and polystyrene-based resins, and

the second resin material is one or more selected from a group consisting of polyimide, acrylic-based resins, novolac-based resins, phenol-based resins, polyester-based resins, epoxy-based resins, vinyl-chloride-based resins, and polybenzimidazole-based resins.

5. The semiconductor device according to claim 3 , wherein the high resistance film is in contact with the source-drain region.

6. The semiconductor device according to claim 1 , wherein

a source-drain electrode of the transistor is electrically connected to the oxide semiconductor film through the connection hole in the first insulating film, and

the second insulating film covers the source-drain electrode.

7. The semiconductor device according to claim 5 , wherein the gate electrode, the oxide semiconductor film, and the high resistance film are included in this recited order.

8. An electronic apparatus with a display unit, the display unit comprising:

a display device;

a transistor driving the display device and including an oxide semiconductor film;

a high resistance film formed on the transistor;

a first insulating film formed on the high resistance film and covering the oxide semiconductor film, and the first insulating film including a first resin material;

a second insulating film including a second resin material, the second insulating film being laminated on the first insulating film; and

a third insulating film including a third resin material, the third insulating film being laminated on the second insulating film,

wherein a polarity of the second resin material is greater than a polarity of the third resin material, and the polarity of the third resin material is greater than a polarity of the first resin material.

9. A semiconductor device comprising:

a transistor including an oxide semiconductor film;

a high resistance film formed on the transistor;

an insulating film covering the oxide semiconductor film and including

a first resin layer including a first resin material, and

a second resin layer including a second resin material, the second resin layer being formed on the first resin layer; and

a surface modification layer covering the insulating film,

wherein a hydrophobicity of the second resin material is greater than a hydrophobicity of the surface modification layer, and the hydrophobicity of the surface modification layer is greater than a hydrophobicity of the first resin material.

10. The semiconductor device according to claim 9 , wherein the surface modification layer has flatness that is higher than flatness of the resin material.

11. The semiconductor device according to claim 9 , wherein the surface modification layer includes one of a silicone-based oligomer and a fluorine-containing oligomer that each function as a modifier.

12. The semiconductor device according to claim 9 , wherein the insulating film has a contact angle of 90 degrees or larger.

13. The semiconductor device according to claim 9 , wherein part or all of a modifier included in the surface modification layer is coupled with the second resin material.

14. The semiconductor device according to claim 9 , wherein at least one of the first and second resin materials include one or more of polyimide, acrilyc-based resins, and polysiloxane.

15. The semiconductor device according to claim 9 , wherein the insulating film includes a modifier of about 0.1 mass percent to about 10 mass percent both inclusive with respect to at least one of the first and second resin materials.

16. The semiconductor device according to claim 15 , wherein concentration of the modifier included in an inner part of the insulating film is lower than concentration of the modifier included in the surface modification layer.

17. The semiconductor device according to claim 9 , wherein a source-drain electrode of the transistor is electrically connected to the oxide semiconductor film through a connection hole in the insulating film.

18. The semiconductor device according to claim 9 , wherein

the oxide semiconductor film includes a channel region and a source-drain region that is adjacent to the channel region and has resistivity lower than resistivity of the channel region, and

the transistor includes a gate electrode facing the channel region.