Vibration device

1. A vibration device comprising:

a semiconductor device;

a first electrode and a second electrode located in a first surface of the semiconductor device;

a vibration element;

a third electrode and a fourth electrode located in a first surface of the vibration element;

a first connection section that connects the first electrode and the third electrode; and

a second connection section that connects the second electrode and the fourth electrode,

the semiconductor device and the vibration element having different thermal expansion coefficients,

the vibration element having a coupling section located between the third electrode and the fourth electrode, and

the coupling section having at least one bend section located between the third electrode and the fourth electrode.

2. A vibration device according to claim 1 , comprising a first protruded electrode located between the first electrode and the third electrode, and a second protruded electrode located between the second electrode and the fourth electrode.

3. A vibration device according to claim 1 , wherein the vibration element includes:

a vibration section;

a base section connected with the vibration section;

a support section that connects to a beam section

extending from the base, and where the third electrode is located;

a fixed section that connects to the support section through the coupling section, and where the fourth electrode is located; and

at least one bend provided in a coupling section that connects the support section and the fixed section.

4. A vibration device according to claim 1 , wherein the third electrode and the fourth electrode are arranged next to each other in the vibration element.

5. A vibration device according to claim 1 , wherein the coupling section has the bend in a plan view of the vibration element.

6. A vibration device according to claim 1 , wherein the coupling section has the bend in a thickness direction of the vibration element.