Temperature compensated acoustic resonator device
An acoustic resonator device comprises: a substrate comprising a cavity or an acoustic mirror; a first electrode disposed over the substrate; a piezoelectric layer disposed over the first electrode; and a second electrode disposed over the piezoelectric layer. The first electrode or the second electrode, or both, are made of an electrically conductive material having a positive temperature coefficient.
1. An acoustic resonator device comprising:
a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a second electrically conductive layer disposed over the first electrically conductive layer; and a buried temperature compensating layer provided between the first and second electrically conductive layers;
a piezoelectric layer disposed over the composite first electrode, the piezoelectric layer having a negative temperature coefficient; and
a second electrode disposed over the piezoelectric layer, wherein at least one of the first electrically conductive layer, the second electrically conductive layer and the second electrode has a positive temperature coefficient that offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.
2. The acoustic resonator device of claim 1 , wherein the buried temperature compensating layer has a positive temperature coefficient that offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.
3. The acoustic resonator device of claim 2 , wherein a thickness of the buried temperature compensating layer is adjusted to provide an optimal coupling coefficient and a minimum temperature coefficient of the acoustic resonator device.
4. The acoustic resonator device of claim 2 , wherein at thickness of the at least one of the first electrically conductive layer, the second electrically conductive layer and the second electrode is adjusted to provide an optimal coupling coefficient and a minimum temperature coefficient of the acoustic resonator device.
5. The acoustic resonator device of claim 1 , wherein the at least one of the first electrically conductive layer, the second electrically conductive layer and the second electrode having a positive temperature coefficient comprises an alloy.
6. The acoustic resonator device of claim 5 , wherein the alloy is one of nickel-iron (Ni—Fe), niobium-molybdenum (NbMo) and nickel-titanium (NiTi).
7. The acoustic resonator device of claim 5 , wherein the first electrically conductive layer comprises the alloy, the second electrically conductive layer comprises molybdenum, and wherein the second electrode comprises tungsten.
8. The acoustic resonator device of claim 1 , wherein the buried temperature compensating layer includes tapered edges.
9. The acoustic resonator device of claim 1 , wherein the second electrode has a negative temperature coefficient, the second electrically conductive layer has a positive temperature coefficient, and the positive temperature coefficient of the buried temperature compensating layer and the positive temperature coefficient of the second electrically conductive layer offset at least a portion of the negative temperature coefficient of the second electrode in addition to offsetting at least the portion of the negative temperature coefficient of the piezoelectric layer.
10. The acoustic resonator device of claim 1 , wherein the substrate defines a cavity over which the composite first electrode is positioned.
11. The acoustic resonator device of claim 1 , wherein the substrate includes an acoustic mirror over which the composite first electrode is positioned.
12. An acoustic resonator device comprising:
a first electrode disposed over a substrate;
a piezoelectric layer disposed over the first electrode, the piezoelectric layer having a negative temperature coefficient; and
a composite second electrode disposed over the piezoelectric layer, the composite second electrode comprising: a first electrically conductive layer provided over the piezoelectric layer; a second electrically conductive layer disposed over the first electrically conductive layer; and a buried temperature compensating layer provided between the first and second electrically conductive layers, wherein the second electrically conductive layer forms an electrical contact with the first electrically conductive layer on at least one side of the buried temperature compensating layer, the electrical contact electrically shorting a capacitive component of the buried temperature compensating layer.
13. The acoustic resonator device of claim 12 , wherein the buried temperature compensating layer has a positive temperature coefficient that offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.
14. The acoustic resonator device of claim 13 , wherein the buried temperature compensating layer comprises an oxide material.
15. The acoustic resonator device of claim 13 , wherein at least one of the first electrically conductive layer, the second electrically conductive layer and the first electrode has a positive temperature coefficient, and comprises an alloy.
16. The acoustic resonator device of claim 15 , wherein the alloy is one of nickel-iron (Ni—Fe), niobium-molybdenum (NbMo) and nickel-titanium (NiTi).
17. The acoustic resonator device of claim 15 , wherein the second electrically conductive layer comprises molybdenum, and the first electrode comprises molybdenum.
18. The acoustic resonator device of claim 12 , wherein the buried temperature compensating layer includes tapered edges.
19. The acoustic resonator device of claim 12 , wherein the first electrode has a negative temperature coefficient, the second electrically conductive layer has a positive temperature coefficient, and the positive temperature coefficient of the buried temperature compensating layer and the positive temperature coefficient of the second electrically conductive layer offset at least a portion of the negative temperature coefficient of the first electrode in addition to offsetting at least the portion of the negative temperature coefficient of the piezoelectric layer.
20. An acoustic resonator device comprising:
a composite first electrode disposed over a substrate, the composite first electrode comprising: a first electrically conductive layer provided over the substrate; a second electrically conductive layer disposed over the first electrically conductive layer; and a buried temperature compensating layer provided between the first and second electrically conductive layers, the buried temperature compensating layer comprising an oxide;
a piezoelectric layer disposed over the composite first electrode, the piezoelectric layer having a negative temperature coefficient; and
a second electrode disposed over the piezoelectric layer, wherein at least one of the first electrically conductive layer, the second electrically conductive layer, and the second electrode has a positive temperature coefficient that offsets at least a portion of the negative temperature coefficient of the piezoelectric layer, the second electrically conductive layer creating an electrical contact with the first electrically conductive layer on at least one side of the buried temperature compensating layer, the electrical contact electrically shorting a capacitive component of the buried temperature compensating layer, wherein the buried temperature compensating layer has a positive temperature coefficient that offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.
21. The acoustic resonator device of claim 20 , wherein the at least one of the first electrically conductive layer, the second electrically conductive layer and the second electrode, having a positive temperature coefficient, comprises an alloy.
22. The acoustic resonator device of claim 21 , wherein the alloy is one of nickel-iron (Ni—Fe), niobium-molybdenum (NbMo) and nickel-titanium (NiTi).
23. The acoustic resonator device of claim 21 , wherein the first electrically conductive layer comprises the alloy, the second electrically conductive layer comprises molybdenum, and wherein the second electrode comprises tungsten.
24. The acoustic resonator device of claim 20 , wherein the buried temperature compensating layer includes tapered edges.
25. The acoustic resonator device of claim 20 , wherein the buried temperature compensating layer comprises an oxide layer, and a thickness of the oxide layer is adjusted to provide an optimal coupling coefficient and a minimum temperature coefficient of the acoustic resonator device.
26. The acoustic resonator device of claim 20 , wherein a thickness of the at least one of the first electrically conductive layer, the second electrically conductive layer and the second electrode is adjusted to provide an optimal coupling coefficient and a minimum temperature coefficient of the acoustic resonator device.
27. The acoustic resonator device of claim 20 , wherein the second electrode has a negative temperature coefficient, the second electrically conductive layer has a positive temperature coefficient, and the positive temperature coefficient of the buried temperature compensating layer and the positive temperature coefficient of the second electrically conductive layer offset at least a portion of the negative temperature coefficient of the second electrode in addition to offsetting at least the portion of the negative temperature coefficient of the piezoelectric layer.
28. The acoustic resonator device of claim 20 , wherein the substrate defines a cavity over which the composite first electrode is positioned.
29. The acoustic resonator device of claim 20 , wherein the substrate includes an acoustic mirror over which the composite first electrode is positioned.