Memory and logic device and method for manufacturing the same

1. A method for manufacturing a semiconductor integrated circuit device, the method comprising:

preparing a semiconductor substrate including a first main surface and a second main surface, the semiconductor substrate further including:

a memory array area and a non-memory array area provided over the first main surface;

a first embedded metal interconnection layer to an Nth embedded metal interconnection layer provided over the first main surface, each of the first embedded metal interconnection layer to the Nth embedded metal interconnection layer being stacked together on top of one another; and

a low-dielectric, constant interlayer insulating film provided to at least one of the first to Nth embedded metal interconnection layers;

forming a memory-periphery metal seal ring provided between the memory array area and the non-memory array area so as to surround the memory array area; and

after the forming of the memory-periphery metal seal ring, forming a plurality of memory capacitors across and embedded in at least from the first to Nth embedded metal interconnection layers stacked together on top of one another in the memory array area surrounded by the memory-periphery metal seal ring, the memory capacitors each comprising a metal insulator metal structure,

wherein the memory-periphery metal seal ring separates the memory array area from the non-memory array area,

wherein the low-dielectric constant interlayer insulating film comprises a porous low-dielectric constant film SiOC, and

wherein each of the first embedded metal interconnection layer to the Nth embedded metal interconnection layer being directly stacked together in a single stack and directly connected on top of one another including the low-dielectric constant interlayer insulating film.

2. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein, the forming of the memory-periphery metal seal ring further comprises the memory-periphery metal seal ring formed so as to extend across the embedded metal interconnection layers that are stacked on top of one another including the low-dielectric constant interlayer insulating film,

wherein the plurality of memory capacitors are surrounded by the memory-periphery metal seal ring,

wherein the plurality of memory capacitors are formed across at least from the first to Nth embedded metal interconnection layers that are stacked, where N is an integer of at least three, and

wherein the memory capacitors each comprising the metal insulator metal structure that includes:

an individually separated capacitance's lower electrode disposed at a lowest part of the metal insulator metal structure;

a capacitance insulating film formed over the capacitance's lower electrode;

a capacitance's upper electrode formed over the capacitance insulating film so as to integrally cover a plurality of cells; and

a capacitance plate integrally covering the capacitance's upper electrode.

3. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the memory-periphery metal seal ring is formed so as to be embedded in the embedded metal interconnection layers including the low-dielectric constant interlayer insulating film, and

wherein the memory-periphery metal seal ring is formed in only layers in hierarchy levels of multi-layered interconnects including pre-metal regions,

further comprising forming a chip-periphery metal seal ring at an outermost edge of a front surface of a semiconductor chip, the chip-periphery metal seal ring surrounding the memory-periphery metal seal ring, memory array area and non-memory array area.

4. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , further comprising the following sequential steps of after the forming of the memory-periphery metal seal ring and before the forming of the plurality of memory capacitors:

forming an etching protective layer over the memory array area and an area including the memory-periphery metal seal ring;

forming a plurality of openings of the etching protective layer in the memory array area; and

performing an etching to a part of the embedded metal interconnection layers in the memory array area through the openings so as to form a plurality of holes in the embedded metal interconnection layers to embed the memory capacitors.

5. The method for manufacturing a semiconductor integrated circuit device according to claim 4 , wherein, the performing of the etching to the part of the embedded metal interconnection layers in the memory array area, further comprises the etching to the embedded metal interconnection layers in the memory array area is performed while the etching protective layer covers an area directly over the memory-periphery metal seal ring.

6. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , further comprising the following before the forming of the plurality of memory capacitors:

forming an etching protective layer over the memory array area and an area including the memory-periphery metal seal ring;

forming a plurality of openings of the etching protective layer in the memory array area; and

performing an etching to a part of the embedded metal interconnection layers in the memory array area through the openings so as to form a plurality of holes in the embedded metal interconnection layers to embed the memory capacitors,

wherein, the performing of the etching to the part of the embedded metal interconnection layers in the memory array area, further comprises the etching to the embedded metal interconnection layers in the memory array area is performed while the etching protective layer covers an area directly over the memory-periphery metal seal ring.

7. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the memory array area has a COB (Capacitor Over Bitline) structure, and

wherein N is an integer greater of at least four for the Nth embedded metal interconnection layer, and

wherein a body of each of the plurality of memory capacitors having a capacitive property for memory are formed across and embedded from the first to Nth embedded metal interconnection layers stacked and connected together on top of one another in a single stack along a line in the memory array area surrounded by the memory-periphery metal seal ring.

8. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein the forming of the plurality of memory capacitors include forming an upper electrode interconnecting the memory capacitors and lower electrodes provided to respective memory capacitors, and

wherein the plurality of memory capacitors are formed across and embedded the first to Nth embedded metal interconnection layers stacked together on top of one another in the memory array area surrounded by the memory-periphery metal seal ring.

9. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein

the forming of the memory-periphery metal seal ring further comprises electrically separating from the P-type well region in the memory array area at the semiconductor substrate, and

the memory-periphery metal seal ring is formed in limited layers in a hierarchy levels of multi-layered interconnects from the first to Nth embedded metal interconnection layers.

10. The method for manufacturing a semiconductor integrated circuit device according to claim 1 , wherein

the non-memory array area includes a logic circuit area, and the method further comprising:

forming a memory periphery area surrounding the memory-periphery metal seal ring, the memory periphery area includes memory peripheral circuits,

wherein the non-memory array area surrounds the memory periphery area; and

forming a second seal ring surrounding the non-memory array area,

wherein the seal ring is provided across from an upper pre-metal sub-region in the pre-metal region to a third embedded metal interconnection layer from among the first to Nth embedded metal interconnection layers.

11. A method for a semiconductor integrated circuit device, the method comprising;

preparing a semiconductor substrate including a first main surface and a second main surface, the preparing of the semiconductor substrate further including:

forming a memory array area and a non-memory array area over the first main surface;

forming a first embedded metal interconnection layer to an Nth embedded metal interconnection layer provided over the first main surface, each of the first embedded metal interconnection layer to the Nth embedded metal interconnection layer being stacked together on top of one another; and

forming a low-dielectric constant interlayer insulating film to at least one of the first to Nth embedded metal interconnection layers;

forming a memory-periphery metal seal ring provided between the memory array area and the non-memory array area around the memory array area before forming a plurality of memory capacitors in the memory array area surrounded by the memory-periphery metal seal ring,

wherein the memory-periphery metal seal ring separates the memory array area from the non-memory array area; and

after the forming of the memory-periphery metal seal ring, forming the plurality of memory capacitors across and embedded in at least from the first to Nth embedded metal interconnection layers stacked together on top of one another in the memory array area subsequent to the preparing of the semiconductor substrate, each of the memory capacitors formed with a metal insulator metal structure,

wherein the low-dielectric constant interlayer insulating film comprises a porous low-dielectric constant film including SiOC, and

wherein each of the first embedded metal interconnection layer to the Nth embedded metal interconnection layer being directly stacked together in a single stack and directly connected on top of one another including the low-dielectric constant interlayer insulating film.

12. The method according to claim 11 , wherein, the forming of the memory-periphery metal seal ring further comprises the memory-periphery metal seal ring formed so as to extend across the embedded metal interconnection layers including the low-dielectric constant interlayer insulating film.

13. The method according to claim 11 , wherein the memory-periphery metal seal ring is formed so as to be embedded in the embedded metal interconnection layers including the low-dielectric constant interlayer insulating film.

14. The method according to claim 11 , further comprising the following sequential steps of after the forming of the memory-periphery metal seal ring and before the forming of the plurality of memory capacitors:

forming an etching protective layer over the memory array area and an area including the memory-periphery metal seal ring;

forming a plurality of openings of the etching protective layer in the memory array area; and

performing an etching to a part of the embedded metal interconnection layers in the memory array area through the openings so as to form a plurality of holes in the embedded metal interconnection layers to embed the memory capacitors.

15. The method according to claim 14 , wherein, the performing of the etching to the part of the embedded metal interconnection layers in the memory array area, further comprises the etching to the embedded metal interconnection layers in the memory array area is performed while the etching protective layer covers an area directly over the memory-periphery metal seal ring.

16. The method according to claim 11 , further comprising the following before the forming of the plurality of memory capacitors:

forming an etching protective layer over the memory array area and an area including the memory-periphery metal seal ring;

forming a plurality of openings of the etching protective layer in the memory array area; and

performing an etching to a part of the embedded metal interconnection layers in the memory array area through the openings so as to form a plurality of holes in the embedded metal interconnection layers to embed the memory capacitors.

17. The method according to claim 11 , wherein the forming of the plurality of memory capacitors include forming an upper electrode interconnecting the memory capacitors and lower electrodes provided to respective memory capacitors.

18. The method according to claim 11 , wherein the forming of the memory-periphery metal seal ring further comprises electrically separating from the P-type well region in the memory array area at the semiconductor substrate, and

wherein the non-memory array area includes a logic circuit area.

19. The method according to claim 11 , further comprising

forming a memory periphery area surrounding the memory-periphery metal seal ring, the memory periphery area includes memory peripheral circuits,

wherein the non-memory array area surrounds the memory periphery area; and

forming a second seal ring surrounding the non-memory array area.