Photomask, and pattern formation method and exposure apparatus using the photomask
View Patent ↗A photomask includes a translucent substrate; and a light-shielding film formed on the translucent substrate, and including a light-shielding portion and an opening which serves as a translucent region. A plurality of recesses are formed in a region of the translucent substrate, which is exposed from the opening. Widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position.
1. A photomask comprising:
a translucent substrate; and
a light-shielding film formed on the substrate, and including a light-shielding portion and an opening which serves as a translucent region, wherein
a plurality of recesses are formed in a region of the substrate, which is exposed from the opening,
widths of the plurality of recesses gradually increase with an increase in distances from a focal point so that light transmitted by the plurality of recesses is focused in a predetermined position.
2. The photomask of claim 1 , wherein
the plurality of recesses are linearly patterned along two facing sides of the opening, and
a first recess of an adjacent pair of the recesses, which is closer to a boundary between the light-shielding portion and the opening has a greater width than a second recess, which is farther from the boundary.
3. The photomask of claim 2 , wherein
the width of the second recess is 0.9 times or less the width of the first recess.
4. The photomask of claim 2 , wherein
the width of the first recess is twice or less an exposure wavelength.
5. The photomask of claim 2 , wherein
the width of the second recess is smaller than or equal to an exposure wavelength.
6. The photomask of claim 2 , wherein
the width of the first recess and the width of the second recess are smaller than or equal to an exposure wavelength.
7. The photomask of claim 2 , wherein
a distance between the first and the second recesses is smaller than or equal to an exposure wavelength.
8. The photomask of claim 2 , wherein
a sum of a distance between the first and the second recesses and the width of the second recess is smaller than or equal to an exposure wavelength.
9. The photomask of claim 2 , wherein
a distance between the first recess and the boundary is smaller than or equal to an exposure wavelength.
10. The photomask of claim 2 , wherein
the first recess is in contact with the boundary.
11. The photomask of claim 1 , wherein
a first recess of the plurality of recesses is linearly patterned along two facing sides of the opening,
each of second recesses of the plurality of recesses is formed of a group of patterns, each of which has an area of λ×λ or less, where λ is an exposure wavelength,
the first recess is located closer to a boundary between the light-shielding portion and the opening, and
the second recesses are located farther from the boundary with the first recess interposed therebetween.
12. The photomask of claim 11 , wherein
a distance between each adjacent pair of the second recesses is smaller than or equal to an exposure wavelength.
13. The photomask of claim 11 , wherein
a distance between an adjacent pair of the first and second recesses is smaller than or equal to an exposure wavelength.
14. The photomask of claim 11 , wherein
a distance between the first recess and the boundary is smaller than or equal to an exposure wavelength.
15. The photomask of claim 1 , wherein
each of the plurality of recesses is formed of a group of patterns, each of which has an area of λ×λ or less, where λ is an exposure wavelength,
a first recess of the plurality of recesses has a greater total area than a second recess of the plurality of recesses,
the first recess is located closer to a boundary between the light-shielding portion and the opening, and
the second recess is located farther from the boundary with the first recess interposed therebetween.
16. The photomask of claim 15 , wherein
a distance between an adjacent pair of the first and second recesses is smaller than or equal to an exposure wavelength.
17. A photomask comprising:
a translucent substrate; and
a light-shielding film formed on the substrate, and including a light-shielding portion and an opening which serves as a translucent region, wherein
a plurality of recesses are formed in a region of the substrate, which is exposed from the opening,
widths of first recesses of the plurality of recesses gradually increase with an increase in distances from a first focal point so that light transmitted by the first recesses is focused in a predetermined position, and
widths of second recesses of the plurality of recesses gradually increase with an increase in distances from a second focal point, which is different from the first focal point, so that light transmitted by the second recesses is focused in another predetermined position.
18. The photomask of claim 17 , wherein
the plurality of recesses are linearly patterned along two facing sides of the opening,
one of an adjacent pair of the first recesses, which is closer to a boundary between the light-shielding portion and the opening, has a greater width than the other one, which is farther from the boundary, and
one of an adjacent pair of the second recesses, which is closer to the boundary, has a greater width than the other one, which is farther from the boundary.
19. The photomask of claim 17 , wherein
each of the plurality of recesses is formed of a group of patterns, each of which has an area of λ×λ or less, where λ is an exposure wavelength,
one of an adjacent pair of the first recesses, which is closer to a boundary between the light-shielding portion and the opening, has a greater total area than the other one, which is farther from the boundary, and
one of an adjacent pair of the second recesses, which is closer to the boundary, has a greater total area than the other one, which is farther from the boundary.
20. The photomask of claim 1 , wherein
depths of the recesses are greater than half an exposure wavelength.
21. A pattern formation method using the photomask of claim 1 , the method comprising:
forming a resist film on a substrate to be exposed to light;
irradiating the resist film with exposure light via the photomask; and
forming a resist pattern by developing the resist film irradiated with the exposure light.
22. An exposure apparatus using the photomask of claim 1 , the photomask being a cylindrical mask substrate, in which a hollow having a light source of exposure light inside is provided, the apparatus comprising:
a rotation mechanism configured to rotate the photomask; and
a transfer mechanism configured to transfer a substrate to be exposed to light relative to the photomask, wherein
the substrate to be exposed to light is exposed, while the rotation mechanism rotates the photomask, and the transfer mechanism transfers the substrate to be exposed to light.
23. The photomask of claim 17 , wherein
depths of the recesses are greater than half an exposure wavelength.
24. A pattern formation method using the photomask of claim 17 , the method comprising:
forming a resist film on a substrate to be exposed to light;
irradiating the resist film with exposure light via the photomask; and
forming a resist pattern by developing the resist film irradiated with the exposure light.
25. An exposure apparatus using the photomask of claim 17 , the photomask being a cylindrical mask substrate, in which a hollow having a light source of exposure light inside is provided, the apparatus comprising:
a rotation mechanism configured to rotate the photomask; and
a transfer mechanism configured to transfer a substrate to be exposed to light relative to the photomask, wherein
the substrate to be exposed to light is exposed, while the rotation mechanism rotates the photomask, and the transfer mechanism transfers the substrate to be exposed to light.