IP Library Granted Patent US 8,737,445
Granted Patent B2
US 8,737,445 · App. 13/857,103 · Granted May 27, 2014

Laser diode assembly

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Quick Facts
Patent No.
US 8,737,445
App. No.
13/857,103
Granted
May 27, 2014
Kind
B2
Abstract

A laser diode assembly includes a housing having a housing part and a mounting part, which is connected to the housing part and which extends away from the housing part along an extension direction. A laser diode chip is disposed on the mounting part. The laser diode chip has, on a substrate, semiconductor layers with an active layer for emitting light. The housing part and the mounting part have a main body composed of copper and at least the housing part is steel-sheathed. A first solder layer having a thickness of greater than or equal to 2 μm is arranged between the laser diode chip and the mounting part. The laser diode chip has a radiation coupling-out area, on which a crystalline protective layer is applied.

Claims (21)

1. A laser diode assembly, comprising:

a housing having a housing part and having a mounting part that is connected to the housing part and that extends away from the housing part along an extension direction, wherein the housing part and the mounting part have a main body composed of copper and wherein the housing part is steel-sheathed;

a laser diode chip on the mounting part, the laser diode chip having semiconductor layers on a substrate, the semiconductor layers including an active layer for emitting light;

a first solder layer having a thickness of greater than or equal to 2 μm arranged between the laser diode chip and the mounting part; and

a crystalline protective layer, wherein the laser diode chip has a radiation coupling-out area on which the crystalline protective layer is applied.

2. The laser diode assembly according to claim 1 , wherein the crystalline protective layer comprises a dielectric material.

3. The laser diode assembly according to claim 1 , wherein the crystalline protective layer comprises an oxide.

4. The laser diode assembly according to claim 1 , wherein the crystalline protective layer comprises a plurality of crystalline layers.

5. The laser diode assembly according to claim 1 , further comprising an optical layer applied on the radiation coupling-out area.

6. The laser diode assembly according to claim 5 , wherein the optical layer is arranged between the radiation coupling-out area and the crystalline protective layer and is covered by the crystalline protective layer.

7. The laser diode assembly according to claim 5 , wherein the crystalline protective layer is arranged between the radiation coupling-out area and the optical layer.

8. The laser diode assembly according to claim 1 , wherein and optical layer is applied on the radiation coupling-out area, the optical layer being formed by the crystalline protective layer.

9. The laser diode assembly according to claim 1 , wherein a crystalline protective layer is applied on a rear side area of the laser diode chip, the rear side area being situated opposite the radiation coupling-out area.

10. The laser diode assembly according to claim 1 , wherein a crystalline protective layer is applied on side areas of the laser diode chip that connect a rear side area and the radiation coupling-out area, the rear side area being situated opposite the radiation coupling-out area.

11. The laser diode assembly according to claim 1 , wherein the thickness of the first solder layer is greater than or equal to 3 μm.

12. The laser diode assembly according to claim 1 , further comprising a heat-conducting element arranged between the laser diode chip and the mounting part.

13. The laser diode assembly according to claim 12 , wherein the heat-conducting element is fixed on the mounting part by the first solder layer and the laser diode chip is fixed on the heat-conducting element by a second solder layer.

14. The laser diode assembly according to claim 13 , wherein the second solder layer has a thickness of greater than or equal to 2 μm.

15. The laser diode assembly according to claim 12 , wherein the heat-conducting element comprises AlN, SiC, BN, CuW or diamond.

16. The laser diode assembly according to claim 1 , further comprising a housing cover applied on the housing part, the housing cover being welded to the housing part.

17. The laser diode assembly according to claim 16 , wherein the mounting part projects into the housing cover from the housing part along the extension direction.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 3, 2020
From: OSRAM OPTO SEMICONDUCTORS GMBH
To: OSRAM OLED GMBH
Reel/Frame 051467/0906 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 16, 2013
From: LELL, ALFRED; TAUTZ, SOENKE; STRAUSS, UWE; VIERHEILIG, CLEMENS
To: OSRAM OPTO SEMICONDUCTORS GMBH
Reel/Frame 030809/0249 →