System for frequency conversion, semiconducting device and method for operating and manufacturing the same
An edge-emitting semiconductor component, comprising a semiconductor substrate layer and epitaxially on-grown semiconductor layers, is disclosed. According to the invention an active zone of the semiconductor layers is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and generate an optical radiation of a second wavelength that is shorter than the first wavelength. A step of multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal is advantageously made redundant. Furthermore, a system for frequency conversion is disclosed, comprising the semiconductor component, a pump laser diode designed to generate the pumped optical radiation and methods for manufacturing the semiconductor component and operating the system for frequency conversion.
1. A system for frequency conversion, comprising a pump laser diode and an edge-emitting semiconductor component with the pump laser diode designed to generate pumped optical radiation of a first wavelength and provided at a spacing of the edge-emitting semiconductor component that comprises:
a semiconductor substrate layer and
semiconductor layers epitaxially grown onto the semiconductor substrate layer which include an active zone and a waveguide layer, wherein an entrance facet and an exit facet are laterally located with respect to the active zone,
wherein the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength, without multiplying the first wavelength of the pumped optical radiation to a second harmonic using a nonlinear crystal,
characterized in that the active zone comprises a cavity, said cavity comprising a resonant frequency that causes a resonance peak of the optical radiation.
2. The system according to claim 1 , wherein the active zone comprises at least one quantum well surrounded by barriers, said barriers having a wider bandgap than the quantum well.
3. The system according to claim 2 , wherein the at least one quantum well is designed such that it can absorb half the wavelength or one third of the wavelength or one quarter of the first wavelength of the pump radiation.
4. The system according to claim 1 , wherein the active zone comprises at least two spacer layers between which the multiple quantum wells and barriers surrounding the quantum wells are located.
5. The system according to claim 1 , wherein the waveguide layer includes multiple layers that comprise (Al, Ga, In)N, (Be, Mg, Zn, Cd)O, or (Be, Mg, Zn, Cd)(Se, S).
6. The system according claim 1 , wherein the active zone comprises a first grating structure that is located between the entrance facet and the exit facet and designed to reflect the second wavelength of the generated optical radiation.
7. The system according to claim 6 , wherein the entrance and exit facets are broken and coated.
8. The system according to claim 1 , wherein the active zone comprises a second grating structure that is located between the entrance facet and the exit facet and designed to reflect the first wavelength of the pump radiation.
9. The system according to claim 8 , wherein the first grating structure and the second grating structure are located at a spacing from one another in the cavity.
10. The system according to claim 8 , wherein the entrance and exit facets are broken and coated.
11. The system according to claim 1 , wherein the cavity is at least bounded by one of the entrance facet and the exit facet or by at least one grating structure or a combination thereof.
12. The system according to claim 11 , wherein the entrance and exit facets are broken and coated.
13. The system according to claim 1 , wherein the entrance and exit facets are broken and coated.
14. The system according to claim 1 , wherein the second wavelength includes a range from 210 nm to 630 nm.
15. The system according to claim 1 , wherein the semiconductor component and the pump laser diode are arranged relative to one another such that collinear guidance of the pump radiation and the generated laser radiation is achieved.
16. The system according to claim 1 , wherein the pump laser diode is designed as an edge-emitting component.
17. The system according to claim 1 , wherein the pump laser diode comprises the semiconducting material GaAs and generates the pumped optical radiation at the first wavelength between 625 nm and 1300 nm.
18. The system according to claim 1 , wherein the pump laser diode comprises the semiconducting material GaN and generates the pumped optical radiation at the first wavelength between 380 nm and 550 nm.
19. The system according to claim 1 , wherein the pump laser diode comprises the semiconducting material InP and generates the pumped optical radiation at the first wavelength between 1250 nm and 1800 nm.