High density capacitor integrated into focal plane array processing flow
View Patent ↗Methods and structures of photodetectors are described. The structure may include a readout integrated circuit substrate having an internally integrated capacitor. The structure may additionally include an external capacitor overlying the readout integrated circuit substrate. The external capacitor may be coupled with the internally integrated capacitor of the readout integrated circuit substrate, and configured to operate in parallel with the internally integrated capacitor of the readout integrated circuit substrate. The structure may also include a detector overlying the external capacitor.
1. A method of forming a photodetector, the method comprising:
forming an external capacitor over a substrate, wherein the external capacitor is electrically coupled with the substrate, and wherein the substrate comprises an internally integrated capacitor; and
forming a photodetector over the external capacitor.
2. The method of claim 1 , wherein forming the external capacitor further comprises:
forming a first electrode over the substrate;
forming a dielectric material over the first electrode; and
forming a second electrode over the dielectric material.
3. The method of claim 2 , wherein the dielectric material comprises a multilayer dielectric material.
4. The method of claim 2 , wherein the method further comprises:
forming a reflector material layer overlying the external capacitor, wherein the reflector material is configured to electrically couple the second electrode with the substrate.
5. The method of claim 1 , wherein the external capacitor is electrically coupled with the substrate at electrical connectors separate from electrical connectors to which the photodetector is coupled.
6. The method of claim 1 , wherein the external capacitor is electrically coupled with the substrate such that the external capacitor and internally integrated capacitor are configured to operate in parallel.
7. The method of claim 1 , wherein the method further comprises:
forming a dielectric layer overlying the external capacitor.