Light-emitting device
View Patent ↗A light emitting device comprising: a substrate, wherein the substrate comprises a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein the entire sidewall is a substantially textured surface with a depth of 10˜150 μm; and a light emitting stack layer formed on the substrate.
1. A light emitting device, comprising:
a substrate, wherein the substrate comprises a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein the entire sidewall is a substantially textured surface with a depth of between about 50 μm and 150 μm; and
a stack of semiconductor epitaxial layers formed on the substrate.
2. The light emitting device of claim 1 , wherein the textured surface is a convex-concave structure or continuous roughed surface.
3. The light emitting device of claim 2 , wherein the extension direction of the convex-concave structure is longitudinal.
4. The light emitting device of claim 3 , wherein the extension direction can be a direction originating from the first major surface of the substrate and heading to the second major surface of the substrate.
5. The light emitting device of claim 3 , further comprising an electrode formed on the light emitting stack.
6. The light emitting device of claim 5 , further comprising a transparent conductive oxide layer formed between the electrode and the light emitting stack.
7. The light emitting device of claim 1 , wherein the stack of semiconductor epitaxial layers comprises:
a first conductive-type semiconductor layer formed on the first major surface of the substrate;
an active layer formed on the first conductive-type semiconductor layer; and
a second conductive-type semiconductor layer formed on the active layer.
8. The light emitting device of claim 7 , wherein the upper surface of the second conductive-type semiconductor layer is a substantially textured surface.
9. The light emitting device of claim 1 , wherein the first major surface is a substantially textured surface.
10. The light emitting device of claim 1 , wherein all of the sidewall is the substantially textured surface.
11. A light emitting device, comprising:
a substrate, wherein the substrate comprises a first major surface, a second major surface opposite to the first major surface, and a sidewall wherein the entire sidewall is a substantially textured surface with a depth of between about 50 μm and 150 μm and the textured surface is with an extension direction and forms an angle θ with the first major surface of the substrate, herein 0°<θ<90°; and
a stack of semiconductor epitaxial layers formed on the substrate.
12. The light emitting device of claim 11 , wherein the extension direction can be a direction originating from the first major surface of the substrate and heading to the second major surface of the substrate.
13. The light emitting device of claim 11 , wherein the textured surface is a convex-concave structure or continuous roughed surface.
14. The light emitting device of claim 11 , wherein the stack of semiconductor epitaxial layers comprises:
a first conductive-type semiconductor layer formed on the first major surface of the substrate;
an active layer formed on the first conductive-type semiconductor layer; and
a second conductive-type semiconductor layer formed on the active layer.
15. The light emitting device of claim 14 , wherein the upper surface of the second conductive-type semiconductor layer is a substantially textured surface.
16. The light emitting device of claim 11 , further comprising an electrode formed on the light emitting stack.
17. The light emitting device of claim 16 , further comprising a transparent conductive oxide layer formed between the electrode and the light emitting stack.
18. The light emitting device of claim 11 , wherein the first major surface is a substantially textured surface.
19. The light emitting device of claim 11 , wherein all of the sidewall is the substantially textured surface.