Optoelectronic semiconductor body and method for producing the same

1. An optoelectronic semiconductor device comprising:

a semiconductor body comprising a semiconductor layer sequence comprising an active layer suitable for generating electromagnetic radiation, and a first electrical connecting layer and a second electrical connecting layer;

wherein the semiconductor body is provided for emitting electromagnetic radiation from a front side, the first and the second electrical connecting layers are arranged at a rear side opposite the front side and are electrically insulated from one another by a separating layer;

wherein the first electrical connecting layer, the second electrical connecting layer, and the separating layer overlap laterally; and

wherein a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side, wherein the semiconductor layer sequence has a current spreading layer adjacent to the rear side, the current spreading layer comprising a transparent conducting oxide.

2. The optoelectronic semiconductor device according to claim 1 , wherein the current spreading layer is a vapor deposited layer and disposed on the semiconductor layer sequence.

3. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor layer sequence is free of a growth substrate.

4. The optoelectronic semiconductor device according to claim 1 , further comprising a carrier substrate at the rear side of the semiconductor body, wherein the first and the second connecting layers are arranged between the semiconductor layer sequence and the carrier substrate at least in some regions under the semiconductor body.

5. The optoelectronic semiconductor device according to claim 1 , wherein a mirror layer is arranged at least in places between the semiconductor layer sequence and the first and/or the second electrical connecting layer, the mirror layer has a plurality of openings and the first and/or the second electrical connecting layer extends through the openings to the semiconductor layer sequence.

6. The optoelectronic semiconductor device according to claim 1 , wherein the first and/or the second electrically connecting layer has a multi-layer structure with an adhesion promoting layer, a reflector layer and/or a current distribution layer.

7. The optoelectronic semiconductor device according to claim 1 , wherein the first electrical connecting layer has an electrical contact area which is suitable for electrically contacting the semiconductor body from its front side and/or the second electrical connecting layer has an electrical contact area which is suitable for electrically contacting the semiconductor body from its front side.

8. The optoelectronic semiconductor device according to claim 1 , wherein the first and the second electrical connecting layers comprise an electrical contact area which is suitable for electrically contacting the semiconductor body from its rear side.

9. The optoelectronic semiconductor device according to claim 1 , wherein the semiconductor layer sequence comprises a buffer layer arranged at the front side, wherein the buffer layer has a low electrical conductivity and is undoped or weakly n-doped.

10. An optoelectronic semiconductor device comprising a semiconductor body, the semiconductor body comprising:

a semiconductor layer sequence comprising an active layer suitable for generating electromagnetic radiation, and a first electrical connecting layer, and a second electrical connecting layer;

wherein the semiconductor body is provided for emitting electromagnetic radiation from a front side;

wherein the first and the second electrical connecting layers are arranged at a rear side opposite the front side and are electrically insulated from one another using a separating layer;

wherein the first electrical connecting layer, the second electrical connecting layer, and the separating layer overlap laterally;

wherein a partial region of the second electrical connecting layer extends from the rear side through a breakthrough in the active layer in the direction of the front side; and

wherein the first and the second electrical connecting layers comprise an electrical contact area which is suitable for electrically contacting the semiconductor body from its rear side.

11. The optoelectronic semiconductor device according to claim 10 , wherein the semiconductor layer sequence is free of a growth substrate.

12. The optoelectronic semiconductor device according to claim 10 , further comprising a carrier substrate at its rear side, wherein the first and the second connecting layers are arranged between the semiconductor layer sequence and the carrier substrate at least in some regions under the semiconductor body.

13. The optoelectronic semiconductor device according to claim 10 , wherein a mirror layer is arranged at least in places between the semiconductor layer sequence and the first and/or the second electrical connecting layer, the mirror layer comprising a plurality of openings, and wherein the first and/or the second electrical connecting layer extends through the openings to the semiconductor layer sequence.

14. The optoelectronic semiconductor device according to claim 10 , wherein the first and/or the second electrically connecting layer comprises a multi-layer structure with an adhesion promoting layer, a reflector layer and/or a current distribution layer.

15. The optoelectronic semiconductor device according to claim 10 , the semiconductor layer sequence has a current spreading layer adjacent to the rear side, the current spreading layer containing a transparent conducting oxide.

16. The optoelectronic semiconductor device according to claim 10 , wherein the semiconductor layer sequence has a buffer layer arranged at the front side, which buffer layer has a low electrical conductivity and is undoped or weakly n-doped.

17. The optoelectronic semiconductor device according to claim 15 , wherein the current spreading layer is a vapor deposited layer disposed on the semiconductor layer sequence.