IP Library Granted Patent US 9,520,868
Granted Patent B2
US 9,520,868 · App. 13/862,289 · Granted Dec 13, 2016

Power transistor driving circuits and methods for switching mode power supplies

Inventors: Jinhua Duan (Shanghai, CN); Qiang Zong (Shanghai, CN); Yajiang Zhu (Shanghai, CN)
Assignee: BCD Semiconductor Manufacturing Limited
H03K17/16H02M3/33507H03K17/04123G05F3/26G05F3/267G05F3/30H03K2217/0036
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Quick Facts
Patent No.
US 9,520,868
App. No.
13/862,289
Granted
Dec 13, 2016
Kind
B2
Abstract

A power supply controller is provided for providing a drive current to a control terminal of a power transistor in three time intervals. The controller includes control circuits configured to control the drive current in multiple stages. During a first time interval, first drive current includes a current spike for turning on the power transistor in response to a start of the control signal pulse. During a second time interval, a second drive current includes a ramping current substantially proportional to a magnitude of a current through the power transistor. During a third time interval, current flow to the power transistor is at least partially turned off before an end of the control signal pulse.

Claims (28)

1. A driver circuit, the driver circuit comprising:

a current mirror having first and second PMOS transistors;

a bipolar transistor coupled to the second PMOS transistor of the current mirror to receive a first current; and

a plurality of serially connected diode devices coupled between a collector and a base of the bipolar transistor;

wherein the collector of the bipolar transistor is configured to provide a driving voltage according to the number of the plurality of serially-connected diode devices and the size ratio between the first and the second PMOS transistors.

2. The driver circuit of claim 1 , further comprising:

an input terminal coupled to the first PMOS transistor of the current mirror for receiving a timing signal;

an MOS transistor coupled between the input terminal and a ground terminal; and

a resistor and a capacitor coupled in series between a gate of the MOS transistor and the ground terminal.

3. A method for turning off a first bipolar transistor, comprising:

coupling an MOS transistor to a base of the first bipolar transistor;

during a first time period in response to a first control signal, applying a first voltage to a gate of the MOS transistor to discharge the first bipolar transistor; and

during a second time period in response to a second control signal, applying a second voltage to the gate of the MOS transistor to discharge the first bipolar transistor, the second voltage being lower than the first voltage.

4. The method of claim 3 , further comprising:

deriving the first voltage from a plurality of serially connected diode devices and a base-emitter voltage of a second bipolar transistor;

wherein the second bipolar transistor includes a collector coupled to a gate of the MOS transistor; and

the plurality of serially connected diode devices are coupled between and base of the second bipolar transistor.

5. A driver circuit for turning off a first bipolar transistor, the driver circuit comprising:

a current mirror having first and second PMOS transistors;

a second bipolar transistor coupled to the second PMOS transistor of the current mirror;

a plurality of diode devices coupled in series between a collector and a base of the second bipolar transistor; and

a first MOS transistor having a gate terminal coupled to the collector of the second bipolar transistor and a drain terminal for coupling to a control terminal of the first bipolar transistor for turning off the first bipolar transistor.

6. The circuit of claim 5 , wherein the collector terminal of the second bipolar transistor is configured, in response to a first control signal, to provide a first voltage to a gate of the first MOS transistor to provide a driving current to the control terminal of the first bipolar transistor for discharging the first bipolar transistor.

7. The circuit of claim 6 , wherein the first MOS transistor is configured to be coupled to a second voltage in response to a second control signal, the second voltage being lower than the first voltage.

8. The circuit of claim 7 , further comprising:

an input terminal coupled to the current mirror for receiving the first control signal;

a second MOS transistor coupled between the input terminal and a ground terminal; and

a resistor and a capacitor coupled in series between a gate of the MOS transistor and the ground terminal.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2020
From: BCD SEMICONDUCTOR MANUFACTURING LIMITED
To: BCD SHANGHAI MICRO-ELECTRONICS COMPANY LIMITED
Reel/Frame 054855/0415 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 8, 2016
From: DUAN, JIANHUA; ZONG, QIANG; ZHU, YAJIANG
To: BCD SEMICONDUCTOR MANUFACTURING LIMITED
Reel/Frame 039109/0867 →
Priority Claims (1)
CN 2009 1 0226104 · Nov 20, 2009 · national
Continuity (2)
Division 12638809 · Dec 15, 2009
Related Publication 20130222044A1 · Aug 29, 2013