Polycrystalline diamond compact including a substrate having a convexly-curved interfacial surface bonded to a polycrystalline diamond table, and related methods and applications
View Patent ↗Embodiments of the invention relate to polycrystalline diamond compacts including a substrate having a convexly-curved interfacial surface bonded to a polycrystalline diamond table. In an embodiment, a polycrystalline diamond compact includes a substrate including at least one side surface and a convexly-curved interfacial surface that may, in some embodiments, extend inwardly directly from the at least one side surface to form at least one peripheral edge therebetween. The polycrystalline diamond compact further includes a polycrystalline diamond table bonded to the convexly-curved interfacial surface of the substrate.
1. A polycrystalline diamond compact, comprising:
a substrate including at least one side surface and a convexly-curved interfacial surface extending inwardly directly from the at least one side surface to define at least one peripheral edge between the at least one side surface and the convexly-curved interfacial surface; and
a polycrystalline diamond table bonded to the convexly-curved interfacial surface of the substrate, the polycrystalline diamond table including:
a plurality of bonded diamond grains defining a plurality of interstitial regions;
a concavely-curved table interfacial surface substantially corresponding to the convexly-curved interfacial surface;
a substantially planar upper surface;
at least one lateral surface extending between the concavely-curved table interfacial surface and the substantially planar upper surface, the at least one lateral surface being substantially coextensive with the at least one side surface of the substrate, the substantially planar upper surface extending inwardly from the at least one lateral surface;
a first region adjacent to the substrate that includes a metallic infiltrant disposed interstitially between the plurality of bonded diamond grains thereof;
a second region extending inwardly from the substantially planar upper surface to a depth therein, the plurality of interstitial regions of the second region being substantially free of the metallic infiltrant; and
the polycrystalline diamond table exhibits a minimum thickness over an uppermost location of the convexly-curved interfacial surface of about 0.0050 inch or more and exhibits a ratio of a maximum depth of the second region to the minimum thickness of the polycrystalline diamond table of about 0.30 to about 0.50.
2. The polycrystalline diamond compact of claim 1 wherein the convexly-curved interfacial surface of the substrate exhibits a generally elliptical geometry.
3. The polycrystalline diamond compact of claim 1 wherein the convexly-curved interfacial surface of the substrate exhibits a generally hemispherical geometry.
4. The polycrystalline diamond compact of claim 1 wherein the convexly-curved interfacial surface of the substrate is convexly curved over substantially all of the convexly-curved interfacial surface.
5. The polycrystalline diamond compact of claim 1 wherein the convexly-curved interfacial surface of the substrate includes a plurality of grooves extending transversely across the convexly-curved interfacial surface.
6. The polycrystalline diamond compact of claim 5 wherein the plurality of grooves are substantially parallel to each other.
7. The polycrystalline diamond compact of claim 1 wherein the convexly-curved interfacial surface of the substrate includes a plurality of recesses formed therein.
8. The polycrystalline diamond compact of claim 1 wherein the minimum thickness of the polycrystalline diamond table is generally centrally located on the preformed polycrystalline diamond table.
9. The polycrystalline diamond compact of claim 1 wherein the minimum thickness of the polycrystalline diamond table is about 0.010 inch to about 0.100 inch.
10. The polycrystalline diamond compact of claim 1 wherein the minimum thickness of the polycrystalline diamond table is about 0.010 inch to about 0.050 inch.
11. The polycrystalline diamond compact of claim 1 wherein the metallic infiltrant includes cobalt, iron, nickel, or alloys thereof.
12. The polycrystalline diamond compact of claim 1 wherein the second region exhibits a maximum depth that is greater than about 250 μm as measured from the substantially planar upper surface.
13. The polycrystalline diamond compact of claim 1 wherein the second region exhibits a maximum depth that is about 250 μm to about 400 μm as measured from the substantially planar upper surface.
14. The polycrystalline diamond compact of claim 1 wherein the convexly-curved interfacial surface of the substrate exhibits a radius of curvature of about 0.50 inch to about 1.20 inch.
15. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is preformed or formed integrally with the substrate.
16. The polycrystalline diamond compact of claim 1 wherein the convexly-curved interfacial surface of the substrate is substantially smooth over substantially all of a surface area of the convexly-curved interfacial surface.
17. A rotary drill bit, comprising:
a bit body configured to engage a subterranean formation; and
a plurality of polycrystalline diamond cutting elements affixed to the bit body, at least one of the polycrystalline diamond cutting elements including:
a substrate including at least one side surface and a convexly-curved interfacial surface extending inwardly directly from the at least one side surface to define at least one peripheral edge between the at least one side surface and the convexly-curved interfacial surface; and
a polycrystalline diamond table bonded to the convexly-curved interfacial surface of the substrate, the polycrystalline diamond table including:
a concavely-curved table interfacial surface substantially corresponding to the convexly-curved interfacial surface,
a substantially planar upper surface;
at least one lateral surface extending between the concavely-curved table interfacial surface and the substantially planar upper surface, the at least one lateral surface being substantially coextensive with the at least one side surface of the substrate, the substantially planar upper surface extending inwardly from the at least one lateral surface;
a first region adjacent to the substrate that includes a metallic infiltrant disposed interstitially between the plurality of bonded diamond grains thereof;
a second region extending inwardly from the substantially planar upper surface to a depth therein, the plurality of interstitial regions of the second region being substantially free of the metallic infiltrant; and
the polycrystalline diamond table exhibits a minimum thickness over an uppermost location of the convexly-curved interfacial surface of about 0.0050 inch or more and a ratio of a maximum depth of the second region to the minimum thickness of the polycrystalline diamond table is about 0.30 to about 0.50.
18. A method of fabricating a polycrystalline diamond compact, comprising:
providing an at least partially leached polycrystalline diamond table including a concavely-curved interfacial surface, a substantially planar upper surface, and at least one lateral surface extending therebetween, the substantially planar upper surface extending inwardly directly from the at least one lateral surface;
providing a substrate including at least one side surface and a convexly-curved interfacial surface extending inwardly directly from the at least one side surface to define at least one peripheral edge therebetween, the at least one side surface being substantially coextensive with the at least one lateral surface, the convexly-curved interfacial surface curved to generally correspond with the concavely-curved interfacial surface of the at least partially leached polycrystalline diamond table;
mating the convexly-curved interface surface of the substrate with the concavely-curved interfacial surface of the at least partially leached polycrystalline diamond table to form an assembly;
subjecting the assembly to a high-pressure/high-temperature process effective to at least partially infiltrate the at least partially leached polycrystalline diamond table with a metallic infiltrant; and
leaching the metallic infiltrant from a region of the polycrystalline diamond table such that a ratio of a maximum depth of the second region to the minimum thickness of the polycrystalline diamond table is about 0.30 to about 0.50.
19. The method of claim 18 wherein the at least partially infiltrated polycrystalline diamond table exhibits a minimum thickness of about 0.0050 inch or more.
20. A polycrystalline diamond compact, comprising:
a substrate including at least one side surface and a convexly-curved interfacial surface extending inwardly directly from the at least one side surface; and
a pre-sintered polycrystalline diamond table bonded to the convexly-curved interfacial surface of the substrate, the pre-sintered polycrystalline diamond table defining a concavely-curved table interfacial surface substantially corresponding to the convexly-curved interfacial surface, a substantially planar upper surface, and at least one lateral surface extending between the convexly-curved interfacial surface and the substantially planar upper surface, the at least one lateral surface being substantially coextensive with the at least one side surface of the substrate, the substantially planar upper surface extending inwardly directly from the at least one lateral surface, the pre-sintered polycrystalline diamond table including a plurality of bonded diamond grains exhibiting an average grain size of about 30 μm or less, the pre-sintered polycrystalline diamond table exhibiting about 30 to about 80 hits to failure at about a 50% probability of failure in a 40 J repeating impact test.
21. The polycrystalline diamond compact of claim 20 wherein the polycrystalline diamond table exhibits about 45 to about 55 hits to failure in the vertical weight drop test.
22. The polycrystalline diamond compact of claim 20 wherein the average diamond grain size is about 18 μm to about 25 μm.
23. The polycrystalline diamond compact of claim 20 wherein the convexly-curved interfacial surface of the substrate exhibits a generally elliptical geometry.
24. The polycrystalline diamond compact of claim 20 wherein the convexly-curved interfacial surface of the substrate exhibits a generally hemispherical geometry.
25. The polycrystalline diamond compact of claim 20 wherein the convexly-curved interfacial surface of the substrate is convexly curved over substantially all of the convexly-curved interfacial surface.
26. The polycrystalline diamond compact of claim 20 wherein the pre-sintered polycrystalline diamond table includes a plurality of interstitial regions, at least some of the plurality of interstitial regions are substantially unoccupied.