SiC semiconductor device and method of manufacturing the same
View Patent ↗A method of manufacturing an SiC semiconductor device according to the present invention includes the steps of (a) by using a single mask, etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, to form recesses, (b) by using the same mask as in the step (a), performing ion-implantation in the recesses of the regions which serve as the impurities implantation region and the mark region, at least from an oblique direction relative to a surface of the SiC semiconductor layer and (c) positioning another mask based on the recess of the region which serves as the impurities implantation region or the mark region, and performing well implantation in a region containing the impurities implantation region.
1. A method of manufacturing an SiC semiconductor device, comprising the steps of:
(a) etching regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, with a single mask, to form recesses;
(b) performing ion-implantation in the recesses of the regions which serve as said impurities implantation region and said mark region, with said single mask, at least from an oblique direction relative to a surface of said SiC semiconductor layer; and
(c) positioning another mask based on the recess of the region which serves as said impurities implantation region or said mark region, and performing well implantation in a region containing said impurities implantation region.
2. A method of manufacturing an SiC semiconductor device, comprising the steps of:
(a) performing ion-implantation in regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region, with a single mask, at least from an oblique direction relative to a surface of said SiC semiconductor layer;
(b) performing etching to partially remove ion-implanted regions of the regions which serve as said impurities implantation region and said mark region, with said single mask, to form recesses; and
(c) positioning another mask based on the recess of the region which serves as said impurities implantation region or said mark region, and performing well implantation in a region containing said impurities implantation region.
3. A method of manufacturing an SiC semiconductor device, comprising the steps of:
(a) etching regions of said SiC semiconductor layer which serve as an impurities implantation region and a mark region, with a single mask having a low selectivity relative to an SiC semiconductor layer, to form recesses;
(b) performing ion-implantation in the recesses of the regions which serve as said impurities implantation region and said mark region with the single mask; and
(c) positioning another mask based on the recess of the region which serves as said impurities implantation region or said mark region, and performing well implantation in a region containing said impurities implantation region.
4. The method of manufacturing an SiC semiconductor device according to claim 3 , wherein said step (b) is a step of performing ion-implantation at least from an oblique direction relative to a surface of said SiC semiconductor layer.
5. A method of manufacturing an SiC semiconductor device, comprising the steps of:
(a) performing ion-implantation in regions of an SiC semiconductor layer which serve as an impurities implantation region and a mark region with a single mask having a tapered-shaped opening;
(b) performing etching to partially remove ion-implanted regions of the regions which serve as said impurities implantation region and said mark region, with said single mask, to form recesses; and
(c) positioning another mask based on the recess of the region which serves as said impurities implantation region or said mark region, and performing well implantation in a region containing said impurities implantation region.
6. The method of manufacturing an SiC semiconductor device according to claim 5 , wherein said step (a) is a step of performing ion-implantation at least from an oblique direction relative to a surface of said SiC semiconductor layer.