Semiconductor light emitting device and method for manufacturing the same
A semiconductor light emitting device includes a first nitride semiconductor layer, a dopant doped semiconductor layer on the first nitride semiconductor layer, an active layer on the dopant doped semiconductor layer, a delta doped layer on the active layer, a superlattice structure on the delta doped layer, an undoped layer on the superlattice layer, a second nitride semiconductor layer including a first n-type dopant, a third nitride semiconductor layer including a second n-type dopant, and a fourth nitride semiconductor layer including a third n-type dopant.
1. A light emitting device comprising:
a first conductive type semiconductor layer;
a first delta doped layer on the first conductive type semiconductor layer;
a super lattice structure on the first delta doped layer;
a second delta doped layer on the super lattice structure;
an active layer on the second delta doped layer;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer.
2. The light emitting device according to claim 1 , wherein the first conductive type semiconductor comprises a AlGaN layer.
3. The light emitting device according to claim 1 , further comprising a third delta doped layer between the first conductive type semiconductor layer and the first delta doped layer.
4. The light emitting device according to claim 1 , further comprising a dopant doped layer under the first conductive semiconductor layer.
5. The light emitting device according to claim 1 , wherein the first delta doped layer is formed at a thickness of 0.2 nm-0.5 nm.
6. The light emitting device according to claim 1 , wherein the super lattice structure is formed at a thickness of 5 Å-200 Å.
7. The light emitting device according to claim 1 , wherein the first conductive type semiconductor layer is a n-type semiconductor layer.
8. The light emitting device according to claim 4 , wherein the dopant doped layer is an n-type semiconductor layer.
9. A light emitting device comprising:
a dopant doped semiconductor layer;
a first conductive type semiconductor layer on the dopant doped semiconductor layer, wherein the first conductive type semiconductor layer comprises a AlGaN layer;
a first delta doped layer on the first conductive type semiconductor layer;
a supper lattice structure on the first delta doped layer;
an active layer on the supper lattice structure;
a second conductive type cladding layer on the active layer; and
a second conductive type semiconductor layer on the second conductive type cladding layer.
10. The light emitting device according to claim 9 , further comprising a second delta doped layer on the super lattice structure.
11. The light emitting device according to claim 9 , further comprising a third delta doped layer between the first conductive type semiconductor layer and the first delta doped layer.
12. The light emitting device according to claim 9 , wherein the first delta doped layer is formed at a thickness of 0.2 nm-0.5 nm.
13. The light emitting device according to claim 9 , wherein the super lattice structure is formed at a thickness of 5 Å-200 Å.
14. The light emitting device according to claim 9 , wherein the first conductive type semiconductor layer is a n-type semiconductor layer.
15. The light emitting device according to claim 9 , wherein the dopant doped layer is an n-type semiconductor layer.