Methods for forming electrically precise capacitors, and structures formed therefrom
View Patent ↗High precision capacitors and methods for forming the same utilizing a precise and highly conformal deposition process for depositing an insulating layer on substrates of various roughness and composition are disclosed. The method generally includes the steps of depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD); (b) forming a first capacitor electrode on the first insulating layer; and (c) forming a second insulating layer on the first insulating layer and on or adjacent to the first capacitor electrode. The methods provide an improved deposition process that produces a highly conformal insulating layer on a wide range of substrates, and thereby, an improved capacitor.
1. A method of forming a capacitor, comprising:
a. depositing a first insulating layer on a metal substrate by atomic layer deposition (ALD);
b. forming a first capacitor electrode on said first insulating layer;
c. forming a second insulating layer on said first insulating layer, and on, adjacent to, or on and adjacent to said first capacitor electrode; and
d. depositing a first conductive layer on said first capacitor electrode and said second insulating layer by printing a precursor ink for said first conductive layer in a pattern corresponding to said first capacitor electrode.
2. The method of claim 1 , wherein said metal substrate comprises a metal foil or sheet and forms a second capacitor electrode.
3. The method of claim 2 , wherein said metal foil or sheet comprises stainless steel, molybdenum, copper or aluminum, and has a thickness from about 1 μm to about 300 μm.
4. The method of claim 1 , wherein said first insulating layer has a thickness of from 20 Å to 200 Å.
5. The method of claim 1 , wherein each of said first and second insulating layers independently comprises SiO 2 , Si 3 N 4 , a silicon oxynitride, Al 2 O 3 , SiOC, SiOCH, or HfO 2 .
6. The method of claim 1 , further comprising depositing a first conductive layer on said first capacitor electrode and said second insulating layer.
7. The method of claim 1 , wherein said metal substrate further comprises a barrier layer.
8. The method of claim 1 , further comprising forming an antenna electrically connected to said conductive metal substrate and said first capacitor electrode.
9. The method of claim 1 , wherein said barrier layer comprises a metal compound selected from the group consisting of nitrides and alloys of titanium, tantalum, tungsten, molybdenum, palladium and platinum.
10. A method of forming a capacitor, comprising:
a. depositing a first insulating layer on a metal substrate with a barrier layer thereon by atomic layer deposition (ALD);
b. forming a first capacitor electrode on said first insulating layer; and
c. forming a second insulating layer on said first insulating layer and on, adjacent to, or on and or adjacent to said first capacitor electrode.
11. The method of claim 10 , wherein said metal substrate comprises a metal foil or sheet and forms a second capacitor electrode.
12. The method of claim 11 , wherein said metal foil or sheet comprises stainless steel, molybdenum, copper or aluminum, and has a thickness from about 1 μm to about 300 μm.
13. The method of claim 10 , wherein said first insulating layer has a thickness of from 20 Å to 200 Å.
14. The method of claim 10 , wherein each of said first and second insulating layers independently comprises.
15. The method of claim 10 , further comprising depositing a first conductive layer on said first capacitor electrode and said second insulating layer.
16. The method of claim 10 , further comprising forming said barrier layer on said substrate, and said first insulating layer is deposited on said barrier layer.
17. The method of claim 10 , further comprising forming an antenna electrically connected to said conductive metal substrate and said first capacitor electrode.
18. The method of claim 10 , wherein said barrier layer comprises a metal compound selected from the group consisting of nitrides and alloys of titanium, tantalum, tungsten, molybdenum, palladium and platinum.