Frequency selective infrared sensors

1. A frequency selective infrared (IR) rectenna having a predetermined frequency band, the frequency selective IR rectenna comprising:

a frequency selective surface plasmonic (FSSP) structure designed to selectively convert radiation in the predetermined frequency band that is incident on the FSSP structure into surface plasmon waves (SPWs) substantially independent of the angle of incidence of the incident radiation on the FSSP structure, the FSSP structure having:

a first surface;

a second surface substantially parallel to the first surface; and

a design SPW resonance for SPWs propagating on the second surface of the FSSP structure approximately equal to a highest frequency of the predetermined frequency band;

an electrically insulating thin film layer coupled to the second surface of the FSSP structure;

an electrically insulating via layer coupled to the electrically insulating thin film layer opposite from the FSSP structure, the electrically insulating via layer including a plurality of vias running approximately perpendicular to the second surface of the FSSP structure, each via positioned to correspond to a peak of a SPW standing wave pattern formed by SPWs at the design SPW resonance propagating on the second surface of the FSSP structure;

a plurality of via conductors, one via conductor formed in each of the plurality of vias in the electrically insulating via layer; and

an electrode electrically coupled to the plurality of via conductors.

2. The frequency selective IR rectenna of claim 1 , wherein the predetermined frequency band is in the range of about 160 THz to about 400 THz.

3. The frequency selective IR rectenna of claim 1 , wherein:

the FSSP structure is formed of an FSSP material having a first work function; and

the plurality of via conductors are formed of a via material having a second work function, the second work function being different from the first work function.

4. A frequency selective infrared focal plane array (IRFPA) having a predetermined frequency band, the frequency selective IRFPA comprising:

a dielectric IR absorber having a first surface and a second surface substantially parallel to the first surface;

a frequency selective surface plasmonic (FSSP) structure formed on the first surface of the dielectric IR absorber, the FSSP structure designed to selectively transmit radiation in the predetermined frequency band that is incident on the FSSP structure substantially independent of the angle of incidence of the incident radiation on the FSSP structure;

a plurality of electrodes electrically coupled to the second surface of the dielectric IR absorber, the plurality of electrodes arranged in an N×M array; and

an image decoding processor coupled to the plurality of electrodes to generate image data from electrical signals transmitted by the plurality of electrodes.

5. The frequency selective IRFPA of claim 4 , wherein the dielectric IR absorber has a doping pattern in a plane parallel to the second surface forming a plurality of pixel elements corresponding to the N×M array of electrodes.

6. The frequency selective IRFPA of claim 5 , wherein:

the plurality of pixel elements of the dielectric IR absorber includes a first set of pixel elements and a second set of pixel elements;

a first bandgap energy of the first set of pixel elements is approximately equal to a photon energy of radiation having a lowest frequency of the predetermined frequency band; and

a second bandgap energy of the second set of pixel elements is greater than the first bandgap energy of the first set of pixel elements.

7. The frequency selective IRFPA of claim 4 , wherein the FSSP structure includes a patterned conductive layer (PCL) including a two dimensional array of square unit cells, each unit cell having a side length, l unit , such that l unit < c /2nf peak , where:

c is the speed of light in vacuum;

n is the index of refraction of the dielectric IR absorber at the second surface; and

f peak is a peak frequency of the predetermined frequency band.

8. The frequency selective IRFPA of claim 7 , wherein:

each unit cell of the PCL includes a unit pattern;

the plurality of unit cells of the PCL includes a first set of unit cells and a second set of unit cells; and

at least one dimension of the unit pattern in the first set of unit cells differs from the at least one dimension of the unit pattern in the second set of cells, whereby:

a first SPW resonance for SPWs propagating on a surface of the first set of unit cells is approximately equal to a highest frequency of the predetermined frequency band; and

a second SPW resonance for SPWs propagating on a surface of the second set of unit cells is less than the highest frequency of the predetermined frequency band.

9. The frequency selective IRFPA of claim 7 , wherein each of the plurality of electrodes corresponds to K×L subarray of unit cells of the PCL.

10. A frequency selective infrared focal plane array (IRFPA) having a predetermined frequency band, the frequency selective IRFPA comprising:

a frequency selective surface plasmonic (FSSP) structure designed to selectively convert radiation in the predetermined frequency band that is incident on the FSSP structure into surface plasmon waves (SPWs) substantially independent of the angle of incidence of the incident radiation on the FSSP structure, the FSSP structure having:

a first surface; and

a second surface substantially parallel to the first surface;

an electrically insulating thin film layer coupled to the second surface of the FSSP structure;

an electrically insulating via layer coupled to the electrically insulating thin film layer opposite from the FSSP structure, the electrically insulating via layer including a plurality of vias running approximately perpendicular to the second surface of the FSSP structure, each via positioned to correspond to a peak of a SPW standing wave pattern formed by SPWs propagating on the second surface of the FSSP structure;

a plurality of via conductors, one via conductor formed in each of the plurality of vias in the electrically insulating via layer;

a plurality of electrodes, each of the plurality of electrodes electrically coupled to an N×M pixel array of the plurality of via conductors, where N and M are positive integers; and

an image decoding processor coupled to the plurality of electrodes to generate image data from electrical signals transmitted by the plurality of electrodes.

11. The frequency selective IRFPA of claim 10 , wherein the FSSP structure includes a patterned conductive layer (PCL) including a two dimensional array of square unit cells, each unit cell having a side length, l unit , such that l unit <c/2nf peak , where:

c is the speed of light in vacuum;

n is the index of refraction of the electrically insulating thin film layer; and

f peak is a peak frequency of the predetermined frequency band.

12. The frequency selective IRFPA of claim 11 , wherein each N×M pixel array of the plurality of via conductors corresponds to a K×L subarray of unit cells of the PCL, where K and L are positive integers.

13. A frequency selective infrared (IR) waveguide sensor having a predetermined frequency band, the frequency selective IR waveguide sensor comprising:

a waveguide core;

a cladding layer coupled to the waveguide core, the cladding layer having an outer surface;

a frequency selective surface plasmonic (FSSP) structure:

having:

a first surface having a transfer portion coupled to the outer surface of the cladding layer; and

a second surface substantially parallel to the first surface; and

designed to selectively couple radiation in the predetermined frequency band from an evanescent mode of the waveguide core into a design surface plasmonic wave (SPW) resonance for SPWs propagating on a coupling surface of the FSSP structure, the coupling surface being one of the first surface or the second surface;

a dielectric thin film layer having:

a third surface coupled to the coupling surface of the FSSP structure; and

a fourth surface substantially parallel to the third surface; and

an electrode electrically coupled to the fourth surface of the dielectric thin film layer.

14. The frequency selective IR waveguide sensor of claim 13 , wherein the dielectric thin film layer includes one of:

an electrically insulating layer;

a bulk N-type photoconductor structure;

a bulk P-type photoconductor structure;

a P-N photodiode structure;

a P-I-N photodiode structure; or

a multiple quantum well detector structure.

15. The frequency selective IR waveguide sensor of claim 13 , wherein a thickness of the dielectric IR absorber is less than about 100 nm.