DEPOSITION SOURCE WITH ADJUSTABLE ELECTRODE
An apparatus for depositing a thin film on a substrate is described. The apparatus includes a substrate support having an outer surface for guiding the substrate through a vacuum processing region, a plasma deposition source for depositing the thin film on the substrate in the vacuum processing region, wherein the plasma deposition source comprises an electrode, and an actuator configured for adjusting the distance between the electrode and the outer surface.
1 . An apparatus for depositing a thin film on a substrate, comprising:
a substrate support having an outer surface for guiding the substrate through a vacuum processing region;
a plasma deposition source for depositing the thin film on the substrate in the vacuum processing region, wherein the plasma deposition source comprises an electrode; and
an actuator configured for adjusting the distance between the electrode and the outer surface.
2 . The apparatus according to claim 1 , wherein the substrate support is a coating drum and the substrate is a flexible substrate.
3 . The apparatus according to claim 2 , wherein the plasma deposition source comprises a support element being mechanically connected to the electrode and to an axis of the coating drum.
4 . The apparatus according to claim 3 , wherein the support element is a disk or a portion of a disk, wherein the disk or the portion of the disk has essentially the same diameter as the coating drum or as the coating drum plus width of the vacuum processing region, wherein the disk or the portion of the disk consists of a material different from that of the coating drum having a different thermal expansion coefficient, wherein the disk or the portion of the disk is kept on an adapted temperature level in order to adjust the diameter of the disk or the portion of the disk to that of the coating drum.
5 . The apparatus according to claim 3 , wherein the support element is a disk or a portion of a disk, wherein the disk or the portion of the disk has essentially the same diameter as the coating drum or as the coating drum plus the slit width, wherein the disk or the portion of the disk consists of a material, which is the same material as the material of the coating drum, and wherein either the disk is maintained at the same temperature or the disk or the portion of the disk is kept on an adapted temperature level in order to adjust the diameter of the disk or the portion of the disk to that of the coating drum.
6 . The apparatus according to claim 1 , further comprising:
a monitoring device for monitoring the width of the vacuum processing region.
7 . The apparatus according to claim 6 , wherein the monitoring device includes an optical or electrical monitor for optically or electrically monitoring width of the vacuum processing region.
8 . The apparatus according to claim 6 , wherein the monitoring device is a plasma monitor connected to the plasma deposition sources for monitoring one or more plasma conditions.
9 . The apparatus according to claim 1 , further comprising:
a gas separation unit for separating the vacuum processing region from a further second vacuum processing region adapted to form a slit through which the substrate can pass between the outer surface of the substrate support and the gas separation unit;
wherein the gas separation unit is adapted to control fluid communication between the processing region and the further processing region, wherein the fluid communication is controlled by adjusting the position of the gas separation unit.
10 . The apparatus according to claim 9 , wherein the at least one gas separation unit comprises an actuator configured to adjust the width of the slit.
11 . The apparatus according to claim 9 , wherein the substrate support is a coating drum and wherein the at least one gas separation unit comprises a support element being mechanically connected to the gas separation unit and to the axis of the coating drum.
12 . A method of depositing a thin film on a substrate in a deposition apparatus, comprising:
guiding a substrate over a substrate support; and
varying the distance of an electrode of a plasma deposition source from the substrate support.
13 . The method of claim 19 , wherein the distance is varied by an actuator.
14 . The method of claim 12 , wherein the substrate support is a coating drum and wherein the distance is a radial distance being varied by thermal expansion of a holder for the plasma deposition source.
15 . The method of claim 12 , further comprising:
varying the distance of a gas separation unit configured for the gas separation from the substrate support.
16 . The apparatus according to claim 1 , wherein the surface of the substrate support is a curved surface of a coating drum and the surface of the electrode is a curved surface.
17 . The apparatus according to claim 16 , wherein the curved surface of the coating drum and the curved surface of the electrode of at least the first deposition source have a distance, and wherein the distance can be adjusted by positioning at least the first deposition source.
18 . The apparatus according to claim 16 , wherein the curved surface is shaped such that the electrode has an essentially parallel surface with respect to the surface of the coating drum.
19 . The method of claim 12 , wherein the distance is varied in dependence of the temperature and/or position of the substrate support.
20 . The method of claim 15 , wherein the distance is varied in dependence of the temperature and/or position of the substrate support.