Method and system for providing directional light sources with broad spectrum
View Patent ↗A system and method for providing laser diodes with broad spectrum is described. GaN-based laser diodes with broad or multi-peaked spectral output operating are obtained in various configurations by having a single laser diode device generating multiple-peak spectral outputs, operate in superluminescene mode, or by use of an RF source and/or a feedback signal. In some other embodiments, multi-peak outputs are achieved by having multiple laser devices output different lasers at different wavelengths.
1. An optical device comprising:
a gallium and nitrogen containing substrate having a first crystalline surface region orientation which is non-polar or semi-polar;
an active region comprising a barrier layer and at least one light emission layer, the at least one light emission layer having a graduated profile associated with a peak emission wavelength gradient which has a deviation of about 1 to 40 nm;
a first cavity member overlying a first portion of the at least one light emission layer, the first portion of the at least one light emission layer being associated with a first wavelength, the first cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm the first cavity member being configured to emit radiation at a wavelength of about 430 nm to 540 nm;
a second cavity member overlying a second portion of the at least one light emission layer, the second portion of the at least one light emission layer being associated with a second wavelength, a difference between the first wavelength and the second wavelength being less than 30 nm, the second cavity member being characterized by a length of at least 100 μm and a width of at least 0.5 μm; and
an optical member for combining emission from the first and second cavity members.
2. The device of claim 1 further comprising an electrode coupled to the first cavity member, the second cavity member, or both the first and the second cavity members.
3. The device of claim 1 further comprising a third cavity member.
4. The device of claim 1 wherein the active region comprises a plurality of light emission layers, the plurality of light emission layers comprising a first emission layer and a second emission layer, the first emission layer being characterized by a first gain peak wavelength, the second emission layer being characterized by a second gain peak wavelength, and wherein a difference between the first gain peak wavelength and the second gain peak wavelength is at least 1.5 nm.
5. The device of claim 1 wherein the active region comprises a plurality of light emission layers and at least one barrier layer, the plurality of light emission layers comprising a first emission layer and a second emission layer, the at least one barrier layer being characterized by a first energy level, the first emission layer being characterized by a first gain peak wavelength and a second energy level, the second energy level being lower than the first energy level, the first emission layer having a first amount of atoms diffused from the barrier layer, the second emission layer being characterized by a second gain peak wavelength, and wherein a difference between the first gain peak wavelength and the second gain peak wave length is at least 1.5 nm.
6. The device of claim 1 wherein the active layer comprises at least two quantum wells and at least one barrier layer, each of the at least one barrier layers being configured between a pair of quantum wells.
7. The device of claim 1 , wherein the active region comprises at least one quantum well and at least one barrier layer, each of the at least one quantum wells having a thickness of at least 1.5 nm, and each of the at least one barrier layers having a thickness between about 2 nm and about 22 nm.
8. The device of claim 1 , wherein the first cavity member and the second cavity member each comprise a first end having an reflectivity of at least 85% and a second end having a reflectivity of 1% or less.
9. The device of claim 1 , wherein the first cavity member and the second cavity member are configured to emit a directional beam of light having a spectral width of at least 3 nm.
10. The device of claim 9 , wherein the spectral width is adapted to reduce speckle associated with the directional beam.
11. The device of claim 1 , wherein the first cavity member and the second cavity member are configured to emit a directional beam of light having a spectral width of 4 nm to 8 nm.
12. The device of claim 1 wherein the first crystalline surface region orientation comprises a semipolar plane selected from the {20-21} plane, the {30-31} plane, the {20-2-1} plane, the {30-3-1} plane, the {11-22} plane, and an off-cut of any of the foregoing.
13. The device of claim 4 , wherein the difference between the first gain peak wavelength and the second gain peak wavelength is at least 10 nm.
14. The device of claim 1 , wherein the first cavity member and the second cavity member are configured to emit a directional beam of light having a spectral width greater than 1.5 nm.
15. The device of claim 1 , wherein the first crystalline surface region orientation is selected from a {20-21} plane, a {20-2-1} plane, and an off-cut thereof; and the first cavity member and the second cavity member are oriented in a projection of a c-direction.
16. The device of claim 1 , wherein the first crystalline surface region orientation is selected from a {30-31} plane, a {20-21} plane, and an off-cut thereof.
17. The device of claim 1 , wherein a difference between the first wavelength and the second wavelength is from 1 nm to 10 nm.