Field-effect transistor and fabricating method thereof
A field-effect transistor comprises a substrate, a gate dielectric layer, a barrier layer, a metal gate electrode and a source/drain structure. The gate dielectric layer is disposed on the substrate. The barrier layer having a titanium-rich surface is disposed on the gate dielectric layer. The metal gate electrode is disposed on the titanium-diffused surface. The source/drain structure is formed in the substrate and adjacent to the metal gate electrode.
1. A field-effect transistor comprising:
a substrate;
a gate dielectric layer, disposed on the substrate;
a linear-shaped barrier layer having a titanium-rich surface and disposed on the gate dielectric layer, wherein a titanium concentration of the titanium-rich surface is higher than a titanium concentration within the linear-shaped barrier layer;
a metal gate electrode, disposed above the titanium-rich surface; and
a source/drain structure, formed in the substrate and adjacent to the metal gate electrode.
2. The field-effect transistor according to claim 1 , further comprising a U-shaped work function layer disposed between the titanium-rich surface and the metal gate electrode.
3. The field-effect transistor according to claim 2 , wherein the field-effect transistor is a P type metal-oxide-semiconductor (PMOS) transistor and the work function layer comprises titanium nitride (TiN).
4. The field-effect transistor according to claim 2 , wherein the field-effect transistor is an N type metal-oxide-semiconductor (NMOS) transistor and the work function layer comprises tantalum nitride (TaN), aluminum nitride (AlN), titanium aluminum nitride (TiAlN) or the combination thereof.
5. The field-effect transistor according to claim 1 , wherein the metal gate electrode comprises copper (Cu), aluminum (Al) or a combination thereof.
6. The field-effect transistor according to claim 1 , wherein the linear-shaped barrier layer has a thickness substantially of 20 Å.
7. The field-effect transistor according to claim 1 , wherein the dielectric layer is made of material selected from a group consisting of hafnium silicon, hafnium oxide, hafnium silicon oxide, hafnium silicon oxynitride, hafnium silicon nitride, hafnium aluminum oxide, aluminum oxide, titanium oxide, strontium titanium oxide, tantalum oxide, zirconium oxide, zirconium silicon oxide, lead lanthanum, zirconate titanate, barium strontium titanate and a combination thereof.
8. The field-effect transistor according to claim 7 , wherein the dielectric layer further comprises an interface layer made of silicon oxide or silicon nitride directly in contact with the substrate.
9. The field-effect transistor according to claim 1 , further comprising a silicide layer disposed on the titanium-rich surface of the linear-shaped barrier layer.
10. A field-effect transistor comprising:
a substrate;
a gate dielectric layer, disposed on the substrate;
a linear-shaped barrier layer having a titanium-rich surface and disposed on the gate dielectric layer, wherein a titanium concentration of the titanium-rich surface is higher than a titanium concentration within the linear-shaped barrier layer;
a U-shaped work function layer disposed above the titanium-rich surface;
a metal gate electrode, disposed above the U-shaped work function layer; and
a source/drain structure, formed in the substrate and adjacent to the metal gate electrode.
11. The field-effect transistor according to claim 10 , wherein the field-effect transistor is a P type metal-oxide-semiconductor (PMOS) transistor and the work function layer comprises titanium nitride (TiN).
12. The field-effect transistor according to claim 10 , wherein the field-effect transistor is an N type metal-oxide-semiconductor (NMOS) transistor and the work function layer comprises tantalum nitride (TaN), aluminum nitride (AlN), titanium aluminum nitride (TiAlN) or the combination thereof.
13. The field-effect transistor according to claim 10 , further comprising a silicide layer disposed on the titanium-rich surface of the linear-shaped barrier layer.