Method for producing NbON film
View Patent ↗The NbON film of the present invention is a NbON film in which a photocurrent is generated by light irradiation. The NbON film of the present invention is desirably a single-phase film. The hydrogen generation device ( 600 ) of the present invention includes: an optical semiconductor electrode ( 620 ) including a conductor ( 621 ) and the NbON film ( 622 ) of the present invention disposed on the conductor ( 621 ); a counter electrode ( 630 ) connected electrically to the conductor ( 621 ); a water-containing electrolyte ( 640 ) disposed in contact with a surface of the NbON film ( 622 ) and a surface of the counter electrode ( 630 ); and a container ( 610 ) containing the optical semiconductor electrode ( 620 ), the counter electrode ( 630 ), and the electrolyte ( 640 ). In this device, hydrogen is generated by irradiating the NbON film ( 622 ) with light.
1. A method for producing a NbON film, the method comprising the steps of:
(I) vaporizing R 1 N═Nb(NR 2 R 3 ) 3 (where R 1 , R 2 , and R 3 are each independently an alkyl group); and
(II) bringing, into contact with a heated substrate, the vaporized R 1 N═Nb(NR 2 R 3 ) 3 and at least one selected from oxygen and water vapor,
wherein in the step (II), the substrate is heated to a temperature that is equal to or higher than a boiling point of the R 1 N═Nb(NR 2 R 3 ) 3 and is equal to or lower than a decomposition temperature of the R 1 N═Nb(NR 2 R 3 ) 3 ,
wherein the temperature of the substrate is 400° C. or less, and
the content of compound phases other than the NbON compound phase in the NbON film is 10 at. % or less.
2. The method for producing a NbON film according to claim 1 , wherein R 1 is a tertiary butyl group (—C(CH 3 ) 3 ), and R 2 and R 3 are each independently a straight-chain alkyl group (—C n H 2n+1 , where n is an integer of 1 or more).
3. The method for producing a NbON film according to claim 2 , wherein R 2 and R 3 are selected from the group consisting of methyl and ethyl.