Luminous device comprising multiple spaced-apart emission regions

1. A luminous device comprising:

at least one radiation-emitting semiconductor chip comprising at least two emission regions arranged spaced apart in a lateral direction, wherein each emission region comprises at least one active zone that emits electromagnetic radiation; and

a drive device that operates the emission regions, wherein

the emission regions may be operated electrically separately from one another, and

the drive device drives each emission region separately from remaining emission regions as a function of at least one of the following conditions: service period of the emission region, predeterminable minimum intensity of the electromagnetic radiation emitted by the emission region, attainment of a maximum operating temperature of the semiconductor chip, intensity of the electromagnetic radiation to be emitted by the semiconductor chip, light intensity distribution along a luminous surface of the radiation-emitting semiconductor chip, light intensity distribution along an object to be illuminated by the luminous device.

2. The luminous device according to claim 1 , wherein the drive device connects in at least one emission region if the ambient brightness of the luminous device falls below a given value or disconnects at least one emission region if the ambient brightness of the luminous device exceeds a given value.

3. The luminous device according to claim 1 , wherein the drive device dims or deactivates an emission region operated by said drive device once at least one condition has been reached for said emission region.

4. The luminous device according to claim 1 , wherein the number of emission regions in operation during operation of the luminous device is constant.

5. The luminous device according to claim 1 , wherein intensity emitted by the semiconductor chip during operation of the luminous device is kept constant by the drive device.

6. The luminous device according to claim 1 , wherein at least one emission region is surrounded at least in places by other emission regions, and wherein in a first operating mode (B 1 ) of the luminous device only the surrounded emission region is operated by the drive device and in a second operating mode (B 2 ) at least one of the other emission regions is operated.

7. The luminous device according to claim 6 , wherein in the second operating mode (B 2 ) only the other emission regions are operated by the drive device.

8. The luminous device according to claim 6 , wherein in the second operating mode (B 2 ) all the emission regions are operated by the drive circuit.

9. The luminous device according to claim 6 , wherein intensity of the electromagnetic radiation emitted by the semiconductor chip in the second operating mode (B 2 ) is at least five times and at most fifteen times as high as in the first operating mode (B 1 ).

10. The luminous device according to claim 6 , wherein intensity of the electromagnetic radiation emitted by the semiconductor chip in the first operating mode (B 1 ) is at least five times and at most fifteen times as high as in the second operating mode (B 2 ).

11. The luminous device according to claim 1 , wherein drive device connects in at least one emission region if ambient brightness of the luminous device falls below a given value or disconnects at least one emission region if the ambient brightness of the luminous device exceeds a given value.

12. A signal light comprising:

at least one luminous device according to claim 1 , and

at least one projection surface on which the electromagnetic radiation coupled out of the luminous device impinges.

13. A light source in a motor vehicle headlamp, a motor vehicle rear light or a reading light comprising the signal light according to claim 12 .

14. A method of producing a luminous device according to claim 1 , comprising:

providing a carrier in form of a growth substrate formed from one single piece;

epitaxially jointly growing at least two emission regions spaced apart in a lateral direction on the growth substrate such that the emission regions show the same extent in the vertical direction, the same semiconductor layer sequence, the same extent in the vertical direction of the individual semiconductor layers and the same material composition, wherein each emission region comprises at least one active zone that emits electromagnetic radiation;

providing and connecting a drive device to the emission regions,

wherein in the finished luminous device:

the emission regions remain on the growth substrate,

the growth substrate remains formed from one single piece,

the lateral distance between the emission regions is the same as during the growth process wherein, during operation of the finished luminous device:

the drive device operates the emission regions, and

the drive device drives each emission region separately from remaining emission regions as a function of at least one of service period of the emission region, predeterminable minimum intensity of the electromagnetic radiation emitted by the emission region, attainment of a maximum operating temperature of the semiconductor chip, intensity of the electromagnetic radiation emitted by the semiconductor chip, light intensity distribution along a luminous surface of the radiation-emitting semiconductor chip, light intensity distribution along an object to be illuminated by the luminous device.

15. A luminous device comprising:

at least one radiation-emitting semiconductor chip comprising at least two emission regions arranged spaced apart in a lateral direction, wherein each emission region comprises at least one active zone that emits electromagnetic radiation; the radiation-emitting semiconductor chip comprises at least one carrier, at least two of the emission regions are epitaxially jointly grown and fixed jointly to the carrier, the distance between two emission regions is less than 10% of an average lateral extent of an individual emission region, and the emission regions show the same extent in the vertical direction, the same semiconductor layer sequence, the same extent in the vertical direction of the individual semiconductor layers, and the same material composition; and

a drive device that operates the emission regions,

wherein

the emission regions may be operated electrically separately from one another, and

the drive device drives each emission region separately from remaining emission regions as a function of at least one of service period of the emission region, predeterminable minimum intensity of the electromagnetic radiation emitted by the emission region, attainment of a maximum operating temperature of the semiconductor chip, intensity of the electromagnetic radiation emitted by the semiconductor chip, light intensity distribution along a luminous surface of the radiation-emitting semiconductor chip, light intensity distribution along an object to be illuminated by the luminous device.