Method for manufacturing deep-trench super PN junctions
The present invention provides a method for manufacturing a deep-trench super PN junction. The method includes: a deposition step for forming an epitaxial layer on a substrate; forming a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer; forming deep trenches in the epitaxial layer; completely filling the deep trenches with an epitaxial material and the epitaxial material is beyond the second dielectric layer; filling the entire surface of the second dielectric layer and the epitaxial layer such as Si using a third dielectric to from a surface filling layer with a predetermined height; etching back on the surface filling layer to the interface of the first dielectric layer and the epitaxial layer; and a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize Si epitaxial material.
1. A method for forming a super PN junction, comprising:
a deposition step for forming an epitaxial layer on a substrate;
a dielectric forming step for forming of a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer;
a deep trench forming step for forming deep trenches in the epitaxial layer;
a first filling step before removing the second dielectric layer for completely filling the deep trenches and beyond the second dielectric layer with an epitaxial material;
a second filling step for forming a surface filling layer with a predetermined thickness by filling an entire surface including the second dielectric layer and the epitaxial material, using a third dielectric, wherein the third dielectric is SOG;
an etching step for etching back the surface filling layer and the epitaxial material to expose an interface of the first dielectric layer and the epitaxial layer on the substrate; and
a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize the epitaxial layer.
2. The super-PN-junction forming method according to claim 1 , wherein:
the etching process is a plasma etching process.
3. The super-PN-junction forming method according to claim 2 , wherein:
the plasma etching process adjusts an etching rate selectivity ratio to obtain an etching rate selectivity ratio of 1:1 for the epitaxial material and the third dielectric.
4. The super-PN-junction forming method according to claim 3 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
5. The super-PN-junction forming method according to claim 2 , wherein:
in the second filling process, the third dielectric is filled by an accessary equipment and the third dielectric is a flowable dielectric.
6. The super-PN-junction forming method according to claim 5 , wherein:
a height of the surface filling layer is at least higher than a highest point of the epitaxial material.
7. The super-PN-junction forming method according to claim 6 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
8. The super-PN-junction forming method according to claim 5 , wherein:
in the second filling process, the flowable third dielectric completely fills an entire surface of the second dielectric and the epitaxial material using a spin-coating process.
9. The super-PN-junction forming method according to claim 8 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
10. The super-PN-junction forming method according to claim 5 , wherein:
a wet process is used to remove the first dielectric layer, the second dielectric layer, and the surface filling layer.
11. The super-PN-junction forming method according to claim 10 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
12. The super-PN-junction forming method according to claim 5 , wherein:
in the first filling process, a lowest point of the epitaxial material is higher than the interface of the first dielectric and the epitaxial layer on the substrate.
13. The super-PN-junction forming method according to claim 12 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
14. The super-PN-junction forming method according to claim 5 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
15. The super-PN-junction forming method according to claim 2 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
16. The super-PN-junction forming method according to claim 1 , wherein:
the first dielectric is oxide and the second dielectric is nitride.
17. The super-PN-junction forming method according to claim 16 , wherein:
a thickness of the first dielectric is greater than 500Å, and a thickness of the second dielectric is greater than 300Å.
18. A method for forming a super PN junction, comprising:
a deposition step for forming an epitaxial layer on a substrate;
a dielectric forming step for forming of a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer;
a deep trench forming step for forming deep trenches in the epitaxial layer;
a first filling step for completely filling the deep trenches and beyond the second dielectric layer with an epitaxial material;
a second filling step for forming a surface filling layer with a predetermined thickness by filling an entire surface including the second dielectric layer and the epitaxial material, using a third dielectric;
an etching step for etching back the surface filling layer to expose an interface of the first dielectric layer and the epitaxial layer on the substrate, wherein the etching process is a plasma etching process that adjusts an etching rate selectivity ratio to obtain an etching rate selectivity ratio of 1:1 for the epitaxial material and the third dielectric; and
a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize the epitaxial layer.
19. A method for forming a super PN junction, comprising:
a deposition step for forming an epitaxial layer on a substrate;
a dielectric forming step for forming of a first dielectric layer and a second dielectric layer in sequence on the epitaxial layer;
a deep trench forming step for forming deep trenches in the epitaxial layer;
a first filling step for completely filling the deep trenches and beyond the second dielectric layer with an epitaxial material;
a second filling step for forming a surface filling layer with a predetermined thickness by filling an entire surface including the second dielectric layer and the epitaxial material, using a third dielectric, wherein the third dielectric is filled by an accessary equipment and the third dielectric is a flowable dielectric that completely fills the entire surface of the second dielectric and the epitaxial material using a spin-coating process;
an etching step for etching back the surface filling layer to expose an interface of the first dielectric layer and the epitaxial layer on the substrate; and
a removing step for removing the first dielectric layer, the second dielectric layer and the surface filling layer to planarize the epitaxial layer.