ELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN ELECTRONIC COMPONENT

1 . An electronic component comprising:

a first electrode;

an organic functional layer structure on or over the first electrode;

a second electrode on or over the organic functional layer structure;

a dielectric layer on or over the second electrode, wherein the dielectric layer is applied by means of one of a chemical vapor deposition (CVD) method and a physical vapor deposition (PVD) method; and

a reflection layer structure on or over the dielectric layer,

wherein the organic functional layer structure forms a first microcavity between the first electrode and the second electrode, and the dielectric layer forms a second microcavity between the second electrode and the reflection layer structure.

2 . The electronic component as claimed in claim 1 ,

wherein the second electrode is designed in such a way that the first microcavity is optically coupled to the second microcavity via the second electrode.

3 . The electronic component as claimed in claim 2 ,

wherein the second electrode is semitransparent with respect to the radiation emitted by the organic functional layer structure.

4 . The electronic component as claimed in claim 1 ,

wherein the dielectric layer is a layer which is transparent to radiation at least in a partial range of the wavelength range of 380 nm to 780 nm.

5 . (canceled)

6 . The electronic component as claimed in claim 1 ,

wherein the dielectric layer is an atomic layer deposition (ALD) layer.

7 . The electronic component as claimed in claim 1 ,

wherein the dielectric layer has a layer thickness in a range of approximately 50 nm to approximately 2 μm.

8 . The electronic component as claimed in claim 1 ,

wherein the dielectric layer comprises one of the group consisting of a material, a mixture of materials and a stack of layers of materials,

wherein the material selected from a group consisting of one or more of: SiO 2 ; Si 3 N 4 ; SiON; Al 2 O 3 ; ZrO 2 ; TiO 2 ;Ta 2 O 5 ; SiO 2 ; ZnO; and HfO 2 .

9 . A method for producing an electronic component wherein the method comprises:

forming a first electrode;

forming an organic functional layer structure on or over the first electrode;

forming a second electrode on or over the organic functional layer structure;

forming a dielectric layer on or over the second electrode, wherein the dielectric layer is formed by means of one of a chemical vapor deposition method and a physical vapor deposition method; and

forming a reflection layer structure on or over the dielectric layer,

such that the organic functional layer structure forms a first microcavity between the first electrode and the second electrode, and

the dielectric layer forms a second microcavity between the second electrode and the reflection layer structure.

10 . The method as claimed in claim 9 ,

wherein the second electrode is formed in such a way that the first microcavity is optically coupled to the second microcavity.

11 . The method as claimed in claim 10 ,

wherein the second electrode is formed as semitransparent with respect to the radiation emitted by the organic functional layer structure.

12 . The method as claimed in claim 9 ,

wherein the dielectric layer is formed as a layer which is transparent to radiation at least in a partial range of the wavelength range of 380 nm to 780 nm.

13 . (canceled)

14 . The method as claimed in claim 9 ,

wherein the dielectric layer is applied by means of an atomic layer deposition (ALD) method.

15 . The method as claimed in claim 9 ,

wherein the dielectric layer is formed with a layer thickness in a range of approximately 50 nm to approximately 2 μm.

16 . The method as claimed in claim 9 ,

wherein the dielectric layer comprised of a material, a mixture of materials and a stack of layers of materials,

wherein the material is selected from a group consisting of one or more of: SiO 2 ; Si 3 N 4 ; SiON; Al 2 O 3 ; ZrO 2 ; TiO 2 ; Ta 2 0 5 ; SiO 2 ; ZnO; and HfO 2 .