High quality devices growth on pixelated patterned templates
A method of producing a template material for growing semiconductor materials and/or devices, comprises the steps of: (a) providing a substrate with a dielectric layer on the substrate; and (b) forming a pixelated pattern on the dielectric layer, the pattern comprising a plurality of discrete groups of structures.
1. A method of producing semiconductor materials and/or devices, comprising:
providing a template material comprising:
providing a substrate with a dielectric layer on the substrate; and
forming a pixelated pattern on the dielectric layer, the pattern comprising a plurality of discrete groups of structures;
wherein part of the substrate is removed to form a pixelated patterned substrate; and
growing semiconductor materials and/or devices onto the template.
2. A method according to claim 1 , comprising the step of:
removing the substrate from the grown semiconductor materials and/or devices.
3. A method according to claim 1 , wherein the pixelated pattern comprises a plurality of micrometer-scale structures.
4. A method according to claim 3 , wherein the structures are in a regular pattern.
5. A method according to claim 3 , wherein the structures are in an irregular pattern.
6. A method according to claim 1 , wherein the pixelated pattern comprises a plurality of nanometer-scale structures.
7. A method according to claim 1 , wherein the discrete groups are separated by micrometer-scale sized stripe boundaries.
8. A method according to claim 1 , wherein the structures comprise at least one of the set including columns, rods, holes, pyramids, hemispherical dots and trapezoids.
9. A method of producing a template material for growing semiconductor materials and/or devices, comprising the steps of:
(a) providing a substrate with a dielectric layer on the substrate; and
(b) forming a pixelated pattern on the dielectric layer, the pixelated pattern comprising a plurality of discrete groups of structures;
wherein the pixelated pattern comprises a plurality of combined micrometer-scale and nanometer-scale structures.
10. A method of producing semiconductor materials and/or devices, comprising the steps of providing a template material produced in accordance with claim 9 , and
(c) growing semiconductor materials and/or devices onto the template.
11. A method according to claim 10 , further comprising the step of:
(d) removing the substrate from the grown semiconductor materials and/or devices.
12. A template material comprising a substrate with a dielectric layer on the substrate; the dielectric layer including a plurality of structures formed thereon, wherein the plurality of structures are arranged in discrete groups, so that a pixelated pattern is formed on the dielectric layer;
wherein the pixelated pattern comprises a plurality of combined micrometer-scale and nanometer-scale structures.
13. A template material according to claim 12 , wherein the structures are in a regular pattern.
14. A template material according to claim 12 , wherein the structures are in an irregular pattern.
15. A template material according to claim 12 , wherein the discrete groups are separated by micrometer-scale sized stripe boundaries.
16. A template material according to claim 12 , wherein the structures comprise at least one of the set including columns, rods, holes, pyramids, hemispherical dots and trapezoids.