Process for producing indium oxide-containing layers
View Patent ↗The present invention relates to a liquid phase process for producing indium oxide-containing layers, in which a coating composition preparable from a mixture comprising at least one indium oxide precursor and at least one solvent and/or dispersion medium, in the sequence of points a) to d), a) is applied to a substrate, and b) the composition applied to the substrate is irradiated with electromagnetic radiation, c) optionally dried and d) converted thermally into an indium oxide-containing layer, where the indium oxide precursor is an indium halogen alkoxide of the generic formula InX(OR) 2 where R is an alkyl radical and/or alkoxyalkyl radical and X is F, Cl, Br or I and the irradiation is carried out with electromagnetic radiation having significant fractions of radiation in the range of 170-210 nm and of 250-258 nm, to the indium oxide-containing layers producible with the process, and the use thereof.
1. A liquid phase process for producing an indium oxide-comprising layer, the process comprising:
a) applying a coating composition to a substrate,
b) subsequently irradiating the coating composition with electromagnetic radiation,
c) then optionally drying the coating composition, and
d) finally thermally converting the coating composition into the indium oxide-comprising layer,
wherein
the coating composition is prepared by a process comprising: mixing at least one indium oxide precursor with at least one solvent, a dispersion medium, or both;
the at least one indium oxide precursor is an indium halogen alkoxide of formula InX(OR) 2 , wherein
R is an alkyl radical, an alkoxyalkyl radical, or both, and
X is F, Cl, Br or I; and
the electromagnetic radiation is carried out with significant fractions of radiation in ranges of 170-210 nm and 250-258 nm.
2. The process according to claim 1 ,
wherein
the electromagnetic radiation is carried out with significant fractions of radiation in ranges of 183-187 nm and 250-258 nm.
3. The process according to claim 1 ,
wherein
the electromagnetic radiation takes place using a low-pressure mercury vapour lamp.
4. The process according to claim 1 ,
wherein
the alkyl radical or the alkoxyalkyl radical of the indium halogen alkoxide comprises C1 to C15 alkoxy or alkyloxyalkyl groups.
5. The process according to claim 1 ,
wherein
the indium halogen alkoxide is InC 1 (OMe) 2 , InCl(OCH 2 CH 2 OCH 3 ) 2 , InCl(OEt) 2 , InCl(OiPr) 2 or InCl(OtBu) 2 .
6. The process according to claim 1 ,
wherein
the indium halogen alkoxide InX(OR) 2 is in a fraction of from 0.1% to 10% by weight, based on a total mass of the coating composition.
7. The process according to claim 1 ,
wherein
the coating composition further comprises other precursors in solution or dispersion.
8. The process according to claim 1 ,
wherein
the at least one solvent or dispersion medium is methanol, ethanol, isopropanol, tetrahydrofurfuryl alcohol, tert-butanol, butyl acetate, methoxyethanol, 1-methoxy-2-propanol, or toluene.
9. The process according to claim 1 ,
wherein
the at least one solvent or dispersion medium is in a fraction of from 90% to 99.9% by weight, based on a total mass of the coating composition.
10. The process according claim 1 ,
wherein
the electromagnetic radiation in said irradiating step b) is carried out in oxygen 0 2 .
11. The process according to claim 10 ,
wherein
the electromagnetic radiation in said irradiating step b) takes place through a mask which ordains a pattern so as to produce a patterned indium oxide-comprising layer.
12. The process according to claim 11 ,
further comprising
e) after said thermally converting step d), removing unirradiated areas through use of aqueous acids.
13. The process according to claim 1 ,
wherein
said thermally converting step d) takes place at a temperature lower than 500° C. and higher than 120° C.
14. An indium oxide-comprising layer produced by the according to claim 1 .
15. A conducting or semiconducting layer for electronic components comprising the indium oxide-comprising layer according to claim 14 .
16. The process according to claim 7 ,
wherein the other precursors are alkoxides or halogen alkoxides of B, Al, Ga, Ge, Sn, Pb, P, Hf, Zn and Sb.