Thin film transistor and display device
View Patent ↗A thin film transistor comprising: a substrate; a gate electrode on the substrate; a gate insulation film on the gate electrode; an oxide semiconductor layer on the gate insulation film; a channel protection film on the oxide semiconductor layer; source and drain electrodes on the channel protection film; and a passivation film on the source and drain electrodes, wherein, (a) each of the gate insulation film, and passivation film comprises a laminated structure and includes a first layer made of aluminum oxide and a second layer made of an insulation material including silicon, and (b) the passivation film covers edges of the oxide semiconductor layer. The transistor is capable of suppressing desorption of oxygen and from the oxide semiconductor layer and reducing the time for film formation thereof.
1. A thin film transistor comprising:
a substrate;
a gate electrode on the substrate;
a gate insulation film on the gate electrode;
an oxide semiconductor layer on the gate insulation film;
a channel protection film on the oxide semiconductor layer;
source and drain electrodes on the channel protection film; and
a passivation film on the source and drain electrodes,
wherein,
the passivation film is in direct contact with and covers edges of the oxide semiconductor layer so that said oxide semiconductor edges are sandwiched between the passivation film and the gate insulation film.
2. The thin film transistor of claim 1 , wherein the channel protective layer does not contain aluminum oxide.
3. The thin film transistor of claim 1 , wherein the gate insulation film is made of one or more of a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a hafnium oxide film, an aluminum oxide film, a tantalum oxide film, a zirconium oxide film, a hafnium oxynitride film, an aluminum oxynitride film, a tantalum oxynitride film and a zirconium oxynitride film.
4. The thin film transistor of claim 1 wherein, the oxide semiconductor layer is made of indium gallium zinc oxide.
5. The thin film transistor of claim 4 , wherein the oxide semiconductor also includes tin (Sn) or titanium.
6. The thin film transistor of claim 1 , wherein the oxide semiconductor layer has the thickness in a range of about 20 nm to 100 nm.
7. The thin film transistor of claim 1 wherein, the channel protection layer comprises an insulation film.
8. The thin film transistor of claim 7 , wherein the channel protection layer comprises a silicon oxide film, a silicon nitride film, a silicon oxynitride film, a hafnium oxide film, an aluminum oxide film, a tantalum oxide film, and a zirconium oxide film, or oxynitride films.
9. The thin film transistor of claim 1 , wherein each of the source and drain electrodes is made of a metal material.
10. The thin film transistor of claim 9 , wherein the metal material is molybdenum or titanium.
11. The thin film transistor of claim 1 wherein each of the source and drain electrodes is a multi-layer film in which an electrode layer adjacent the channel protection film does not include aluminum.
12. The thin film transistor of claim 11 , wherein the electrode layer adjacent the channel protection film contains molybdenum or titanium.
13. The thin film transistor of claim 10 , wherein each of the source and drain electrodes is made of a multi-layer film that includes a molybdenum layer, an aluminum layer and a titanium layer, with the aluminum layer between the molybdenum and titanium layers.
14. The thin film transistor of claim 11 , wherein the multi-layer film includes an aluminum layer between two molybdenum layers.
15. The thin film transistor of claim 11 , wherein the multi-layer film includes an aluminum layer between two titanium layers.
16. The thin film transistor of claim 1 , wherein, the gate insulation film includes a first layer facing away from the substrate and made of aluminum oxide and a second layer facing the substrate and made of an insulation material including silicon.
17. The thin film transistor of claim 1 , wherein the gate electrode has a first layer facing the substrate and containing molybdenum and a second layer facing gate insulation film and containing aluminum.
18. A thin film transistor comprising:
a substrate;
a gate electrode on the substrate;
a gate insulation film on the gate electrode;
an oxide semiconductor layer on the gate insulation film;
a channel protection film on the oxide semiconductor layer;
source and drain electrodes on the channel protection film; and
a passivation film on the source and drain electrodes,
wherein,
the gate insulation film includes a first layer facing away from the substrate and made of aluminum oxide and a second layer facing the substrate and made of an insulation material including silicon,
the passivation film is in direct contact with and covers edges of the oxide semiconductor layer so that said oxide semiconductor edges are sandwiched between the passivation film and the gate insulation film,
the gate electrode has a two-layer configuration with a first layer facing the substrate and containing molybdenum and a second layer facing gate insulation film and containing aluminum,
the channel protection layer includes a layer containing an oxide or oxynitride of silicon, hafnium, aluminum, tantalum, or zirconium, and
the passivation layer has at least one layer containing a nitride, oxide or oxynitride of aluminum, titanium or tantalum.