Magnesium based gettering regions for gallium and nitrogen containing laser diode devices
View Patent ↗In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
1. A gallium and nitrogen containing laser diode device, the device comprising:
a gallium and nitrogen containing substrate material comprising a surface region, the surface region being configured on either a non-polar {10-10} crystal orientation or a semi-polar {10-10} crystal orientation configured with an offcut at an angle toward or away from the direction;
a GaN region formed overlying the surface region;
an active region formed overlying the surface region;
a gettering region comprising a magnesium species overlying the surface region; and
a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
2. The device of claim 1 , where the semipolar plane is selected from one of a {30-3-1} plane, a {30-31} plane, a{20-2-1} plane, a {20-21} plane, a {30-3-1} plane, a {30-32} plane, or an offcut from any one of these planes within +/−5 degrees toward an a-plane or a c-plane.
3. The device of claim 1 , further comprising an electron blocking region between the gettering region and the p-type cladding region.
4. The device of claim 1 , further comprising a barrier region between the active region and the gettering region.
5. The device of claim 4 , wherein the barrier region comprises a layer selected from a GaN layer, an InGaN layer, and a combination thereof.
6. The device of claim 1 , further comprising a separate confinement heterostructure region between the active region and the gettering region, wherein the separate confinement heterostructure region is configured to confine an optical mode; the separate confinement heterostructure comprising InGaN.
7. The device of claim 6 , wherein the separate confinement heterostructure region comprising an InGaN layer.
8. The device of claim 1 , wherein the p-type cladding region comprises a plurality of layers, each of the plurality of layers independently selected from a GaN layer, an AlGaN layer, and an InAlGaN layer, where in each of the plurality of layers is independently doped with a concentration of magnesium.
9. The device of claim 8 , wherein the concentration of magnesium ranges from 5E17 cm −3 to 3E19 cm −3 .
10. The device of claim 1 , wherein the gettering region comprises a magnesium species doped to increase incorporation of unintentionally incorporated magnesium from a first concentration to a second concentration.
11. The device of claim 3 , wherein the electron blocking region comprises a material selected from AlGaN and InAlGaN, wherein the material is characterized by an AlN mole fraction ranging from 5% to 35%.
12. The device of claim 3 , wherein
the electron blocking region comprises a material selected form AlGaN and AlInGaN; and
is configured with a wider band gap than a barrier region configured within a vicinity of the electron blocking region.
13. The device of claim 1 , wherein the active region comprises InGaN quantum wells configured to emit in a blue 430 nm-480 nm wavelength range or in a green 500 nm-540 nm wavelength range.
14. The device of claim 1 , wherein the active region comprises a plurality of quantum well regions.
15. The device of claim 1 , wherein the p-type cladding region comprises a single layer.
16. The device of claim 1 , wherein the p-type region comprises multiple regions.
17. The device of claim 1 , wherein the active region comprises one or more light emitting layers, each of the one or more lighting emitting layers being configured between a pair of barrier regions, each of the one or more lighting emitting layers having a thickness ranging from 2 nm to about 8 nm; and wherein each of the one or more barrier regions has a thickness ranging from 2 nm to 20 nm or from 2 nm to 4 nm or 4 to 20 nm.
18. The device of claim 1 , further comprising a GaN barrier region and wherein the p-type cladding region is a GaN p-cladding region substantially free from an aluminum bearing species.
19. The device of claim 3 , wherein the electron blocking region is doped with a magnesium concentration between 5E18 cm −3 and 5E19 cm −3 .
20. The device of claim 1 , wherein the p-type cladding region is a GaN p-cladding doped with a Mg concentration of less than 2E19 cm −3 or less than about 5E18 cm −3 .
21. The device of claim 3 , wherein the electron blocking region and the p-type cladding region are epitaxially grown at a temperature above about 900° C.
22. The device of claim 1 , wherein the electron blocking region and at least a portion of the p-type cladding region are epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 850° C.
23. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 900° C.
24. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 850° C.
25. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 950° C. and the gettering region is provided at a temperature of less than about 850° C.
26. The device of claim 1 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above 1,000° C. and the gettering region is provided at a temperature of less than about 850° C.
27. The device of claim 3 , wherein the electron blocking region is substantially free from magnesium doping.
28. The device of claim 1 , wherein the gettering region comprises:
a region intentionally doped with Mg; and
a region unintentionally doped with Mg region wherein the unintentionally doped region is configured to incorporate residual Mg before formation of the p-type region.
29. The device of claim 1 , wherein the gettering region is characterized by a thickness from 2 nm to 50 nm.
30. The device of claim 1 , wherein the gettering region comprises a material selected from GaN, AlGaN, InAlGaN, and a combination of any of the foregoing.
31. The device of claim 3 , wherein the electron blocking region comprises a material selected from GaN, InAlN, AlInGaN, and a combination of any of the foregoing.
32. A method for manufacturing a gallium and nitrogen containing laser diode device, the method comprising:
providing a gallium and nitrogen containing substrate material comprising a surface region, the surface region being configured on either a non-polar {10-10} crystal orientation or a semi-polar {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction;
forming a GaN region overlying the surface region;
forming an active region overlying the surface region;
forming a gettering region comprising a magnesium species overlying the surface region; and
forming a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species overlying the active region.
33. The method of claim 32 , wherein the semi-polar plane is selected from a {40-4-1} plane, a {-40-41} plane, a {30-3-1} plane, a {30-31} plane, a {20-2-1} plane, a {20-21} plane, a {30-3-1} plane, a {30-32} plane, or an offcut from any one of these planes within +/−5 degrees toward an a-plane or a c-plane.
34. The method of claim 32 , further comprising forming an electron blocking region between the gettering region and the p-type cladding region.
35. The method of claim 32 , further comprising forming a barrier region between the active region and the gettering region.
36. The method of claim 35 , wherein the barrier region comprises GaN layers, InGaN layers, or a combination thereof.
37. The method of claim 32 , further comprising forming a separate confinement heterostructure region between the active region and the gettering region, wherein the separate confinement heterostructure configured to confine an optical mode.
38. The method of claim 37 , wherein the separate confinement heterostructure region comprises an InGaN layer.
39. The method of claim 32 , wherein the p-type cladding region comprises a plurality of layers, each of the plurality of layers comprising a material independently selected from GaN, AlGaN, and InAlGaN, wherein each of the plurality of layers is independently doped with a concentration of magnesium.
40. The method of claim 39 , wherein the concentration of magnesium ranges from 5E17 cm −3 to 3E19 cm −3 .
41. The method of claim 32 , wherein the gettering region comprises a magnesium species doped to increase incorporation of unintentionally incorporated magnesium from a first concentration to a second concentration.
42. The method of claim 34 , wherein the electron blocking region comprises a material selected from AlGaN and InAlGaN, wherein the material is characterized by an AlN mole fraction ranging from 5% to 35%.
43. The method of claim 32 , wherein the active region comprises InGaN quantum wells configured to emit in a blue 430 nm to 48 nm wavelength range or in the green 500 nm to 540 nm wavelength range.
44. The method of claim 32 , wherein the active region comprises a plurality of quantum well regions.
45. The method of claim 32 , wherein the p-type cladding region comprises a single layer.
46. The method of claim 32 , wherein the p-type region comprises multiple regions.
47. The method of claim 32 , wherein the active region comprises one or more light emitting layers, each of the one or more lighting emitting layers being configured between a pair of barrier regions, each of the one or more lighting emitting layers having a thickness ranging from 2 nm to about 8 nm; and wherein each of the barrier regions has a thickness ranging from 2 nm to 20 nm or from 2 to 4 nm or 4 to 20 nm.
48. The method of claim 32 , further comprising forming a GaN barrier region; and wherein the p-type cladding region is a GaN p-cladding region substantially free from an aluminum bearing species.
49. The method of claim 34 , wherein the electron blocking region is doped with a magnesium concentration between 5E18 cm −3 and 5E19 cm −3 .
50. The method of claim 36 , wherein the p-type region is a GaN p-cladding doped with a Mg concentration less than 2E19 cm −3 or less than about 5E18 cm −3 .
51. The method of claim 34 , wherein the electron blocking region and the p-type cladding region are epitaxially grown at a temperature above about 900 C.
52. The method of claim 32 , wherein the electron blocking region and the p-type cladding region are epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 850° C.
53. The method of claim 32 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than about 900° C.
54. The method of claim 32 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 900° C. and the gettering region is provided at a temperature of less than 850° C.
55. The method of claim 32 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 950° C. and the gettering region is provided at a temperature of less than about 850° C.
56. The method of claim 32 , wherein at least a portion of the p-type cladding region is epitaxially grown at a temperature above about 1,000° C. and the gettering region is provided at a temperature of less than about 850° C.
57. The method of claim 34 , wherein the electron blocking region is substantially free from magnesium doping.
58. The method of claim 32 , wherein the gettering region comprise:
a region intentionally doped with Mg; and
a region unintentionally doped with Mg, wherein the unintentionally doped region is configured to incorporate residual Mg before formation of the p-type region.
59. The method of claim 32 , wherein the gettering region comprises a thickness of 2 nm to 50 nm.
60. The method of claim 32 , wherein the gettering region comprises a material selected from GaN, AlGaN, InAlGaN, and a combination of any of the foregoing.
61. The method of claim 34 , wherein the electron blocking region comprises a material selected from GaN, InAlN, AlInGaN, and a combination of any of the foregoing.