III-nitride multi-channel heterojunction device
View Patent ↗A III-nitride power semiconductor device that includes a plurality of III-nitride heterojunctions.
1. A power semiconductor device comprising:
a first III-nitride heterojunction;
a second III-nitride heterojunction over said first III-nitride heterojunction;
a plurality of schottky electrodes electrically connected to said second III-nitride heterojunction;
a plurality of ohmic electrodes electrically connected to said second III-nitride heterojunction;
wherein said plurality of schottky electrodes and said plurality of ohmic electrodes are alternately arranged in an interdigitated layout, and wherein said first and second III-nitride heterojunctions are configured to form at least two two-dimensional electron gas (2DEG) channels.
2. The power semiconductor device of claim 1 , wherein said first III-nitride heterojunction includes a first III-nitride semiconductor body comprising an alloy of InAlGaN, and a second III-nitride semiconductor body comprising another alloy of InAlGaN.
3. The power semiconductor device of claim 2 , wherein said first III-nitride semiconductor body further comprises AlGaN, and said second III-nitride semiconductor body further comprises GaN.
4. The power semiconductor device of claim 2 , wherein said second III-nitride semiconductor body is undoped.
5. The power semiconductor device of claim 1 , wherein said second III-nitride heterojunction includes a first III-nitride semiconductor body comprising an alloy of InAlGaN, and a second III-nitride semiconductor body comprising another alloy of InAlGaN.
6. The power semiconductor device of claim 5 , wherein said first III-nitride semiconductor body further comprises AlGaN, and said second III-nitride semiconductor body further comprises GaN.
7. The power semiconductor device of claim 5 , wherein said second III-nitride semiconductor body is undoped.
8. The power semiconductor device of claim 1 , further comprising a buffer layer disposed between said first III-nitride heterojunction and a substrate.
9. The power semiconductor device of claim 8 , wherein said buffer layer comprises AlN.
10. The power semiconductor device of claim 8 , wherein said substrate is selected from the group consisting of Si, SiC, and Sapphire.
11. The power semiconductor device of claim 1 , further including a substrate comprising GaN.
12. The power semiconductor device of claim 1 , wherein each of said plurality of schottky electrodes is connected to a first electrical feed, and each of said plurality of ohmic electrodes is connected to a second electrical feed.
13. The power semiconductor device of claim 1 , further comprising a protective layer that prevents out diffusion of nitrogen.
14. The power semiconductor device of claim 13 , wherein said protective layer is nitrogen rich.
15. The power semiconductor device of claim 13 , wherein said protective layer comprises at least one of AlN, HfN, AlGaN, highly doped GaN, highly doped poly GaN, and LPCVD Si3N4.
16. The power semiconductor device of claim 1 , further comprising a lightly doped III-nitride body interposed between each of said plurality of schottky electrodes and said second III-nitride heterojunction.
17. The power semiconductor device of claim 16 , wherein said lightly doped III-nitride body comprises GaN.
18. The power semiconductor device of claim 1 , further comprising a lightly doped III-nitride body interposed between each of said plurality of schottky electrodes and each of said plurality of ohmic electrodes.
19. The power semiconductor device of claim 18 , wherein said lightly doped III-nitride body comprises GaN.