Ultra-fast breakover diode
View Patent ↗In a first embodiment, an ultra-fast breakover diode has a turn on time T ON that is less than 0.3 microseconds, where the forward breakover voltage is greater than +400 volts and varies less than one percent per ten degrees Celsius change. In a second embodiment, a breakover diode has a reverse breakdown voltage that is greater, in absolute magnitude, than the forward breakover voltage, where the forward breakover voltage is greater than +400 volts. In a third embodiment, a string of series-connected breakover diode dice is provided, along with a resistor string, in a packaged circuit. The packaged circuit acts like a single breakover diode having a large forward breakover voltage and a comparably large reverse breakdown voltage, even though the packaged circuit includes no discrete high voltage reverse breakdown diode. The packaged circuit is usable to supply a triggering current to a thyristor in a voltage protection circuit.
1. A breakover diode device comprising:
a P type layer of substrate semiconductor material;
an anode metal electrode disposed on a bottom surface of the P type layer of substrate semiconductor material;
an N type buffer layer of epitaxial semiconductor material disposed on the P type layer, wherein the N type buffer layer has a N type dopant concentration of at least 1×10 15 atoms/cm 3 and of no more than 1×10 16 atoms/cm 3 ;
an N− type base layer of epitaxial semiconductor material disposed on the N type buffer layer, wherein the N− type base layer is less than 130 microns thick;
a P type base region that extends from a semiconductor surface down into the N− type base layer to a depth, wherein the P type base region has a peripheral edge at the semiconductor surface, wherein the peripheral edge has a minimum radius of curvature that is at least twice the depth;
an N+ type annular emitter region that extends down from the semiconductor surface down into the P type base region, wherein P type semiconductor material of the P type base region extends up to the semiconductor surface and defines a cathode short region of P type semiconductor material that is laterally surrounded at the semiconductor surface by the N+ type annular emitter region, wherein the cathode short region has a width at the semiconductor surface, and wherein the width of the cathode short region is less than 0.250 millimeters;
a cathode metal electrode disposed over part of the annular N+ type emitter and over the cathode short region at the semiconductor surface; and
a floating metal ring disposed on the P type base region, wherein the floating metal ring surrounds the cathode metal electrode at the semiconductor surface, wherein the floating metal ring does not contact any part of the N+ type emitter region, and wherein the floating metal ring does not contact any part of the N− type base layer.
2. The breakover diode device of claim 1 , wherein the breakover diode device has a turn on time (T ON ) that is 0.3 microseconds or less, and wherein the breakover diode device has a forward breakover voltage greater than 400 volts.
3. The breakover diode device of claim 2 , wherein the forward breakover voltage varies less than approximately one percent per ten degrees Celsius in an operating temperature range from fifteen degrees Celsius to thirty-five degrees Celsius.
4. The breakover diode device of claim 1 , wherein the breakover diode device has a turn on time (T ON ) that is 0.3 microseconds or less, wherein the turn on time starts at a time when there is more than 400 volts across the breakover diode device between the anode metal electrode and the cathode metal electrode, and wherein the turn on time ends at a time when the voltage across the breakover diode device is zero volts.
5. The breakover diode device of claim 1 , further comprising:
a P+ type guard ring that surrounds the P type base region; and
an N+ type channel stopper ring that surrounds the P+ type guard ring.
6. The breakover diode device of claim 1 , wherein the N type buffer layer meets the N− type base layer at a boundary, and wherein the boundary is planar and extends from one side edge of the breakover diode device to an opposite side edge of the breakover diode device.
7. The breakover diode device of claim 1 , wherein the thickness of the N type buffer layer of epitaxial semiconductor material is 15-25 microns.
8. The breakover diode device of claim 1 , wherein the minimum radius of curvature of the peripheral edge of the P type base region is at least twice the thickness of the N− type base layer of epitaxial semiconductor material.
9. The breakover diode device of claim 1 , further comprising:
a peripheral P type isolation diffusion region that surrounds the N− type base layer of epitaxial semiconductor material and that extends from the semiconductor surface to the bottom surface of the P type layer of substrate semiconductor material.