IP Library Granted Patent US 9,343,239
Granted Patent B2
US 9,343,239 · App. 13/896,672 · Granted May 17, 2016

Solid electrolytic capacitor and improved method for manufacturing a solid electrolytic capacitor

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Quick Facts
Patent No.
US 9,343,239
App. No.
13/896,672
Granted
May 17, 2016
Kind
B2
Abstract

An improved process for forming a capacitor, and improved capacitor formed thereby is described. The process includes: providing an anode comprising a dielectric thereon; applying a first layer of an intrinsically conducting polymer on the dielectric to form a capacitor precursor; applying at least one subsequent layer of an intrinsically conducting polymer on the first layer from a dispersion; and treating the capacitor precursor at a temperature of at least 50° C. no more than 200° C. at a relative humidity of at least 25% up to 100%, or fusing the layered structure by swelling the layered structure with a liquid and at least partially removing the liquid.

Claims (25)

1. A process for forming a capacitor comprising:

providing an anode comprising a dielectric thereon;

applying a first layer of an intrinsically conducting polymer on said dielectric to form a capacitor precursor;

applying at least one subsequent layer of an intrinsically conducting polymer on said first layer of an intrinsically conducting polymer from a dispersion; and

treating said capacitor precursor at a temperature of at least 50° C. to no more than 200° C. at a relative humidity of at least 25% up to 100%.

2. The process for forming a capacitor of claim 1 further comprising applying a primer layer prior to said applying of said first layer of said intrinsically conducting polymer or prior to applying said subsequent layer of said intrinsically conducting polymer.

3. The process for forming a capacitor of claim 2 wherein said primer layer comprises a weak ionic counterion.

4. The process for forming a capacitor of claim 3 wherein said weak counterion has a pKa of at least 0.25 to no more than 6.

5. The process for forming a capacitor of claim 4 wherein said weak counterion has a pKa of at least 2.15 to no more than 6.

6. The process for forming a capacitor of claim 5 wherein said weak ionic counterion comprises multiple carboxylic groups.

7. The process for forming a capacitor of claim 6 wherein said weak ionic counterion comprises 1 to 20 carbons.

8. The process for forming a capacitor of claim 6 wherein said weak ionic counterion is selected from the group consisting of acetic acid, 1,2,3,4-butanetetracarboxylic acid, lysine and butanetetraacetic acid.

9. The process for forming a capacitor of claim 2 wherein said primer layer comprises a cross-linker.

10. The process for forming a capacitor of claim 9 wherein said cross-linker is an amine.

11. The process for forming a capacitor of claim 10 wherein said cross-linker is selected from diamine, triamine, oligoamine and derivatives thereof.

12. The process for forming a capacitor of claim 2 wherein said primer comprises dodecane diamine and 1,2,3,4-butanetetracarboxylic acid.

13. The process for forming a capacitor of claim 1 wherein said applying of said first layer or said subsequent layer of said intrinsically conducting polymer comprises dipping into a dispersion of said intrinsically conducting polymer.

14. The process for forming a capacitor of claim 1 wherein said anode is a valve metal or a conductive oxide of said valve metal.

15. The process for forming a capacitor of claim 14 wherein said anode is selected from the group consisting of tantalum, aluminum, niobium and niobium oxide.

16. The process for forming a capacitor of claim 15 wherein said anode comprises aluminum.

17. The process for forming a capacitor of claim 1 wherein said treating is at a temperature of at least 115° C. to no more than 130° C.

18. The process for forming a capacitor of claim 1 wherein said treating is at a relative humidity of at least 75%.

19. The process for forming a capacitor of claim 1 wherein said intrinsically conducting polymer is selected from the group consisting of polyaniline, polythiophene and polypyrrole and their derivatives.

20. The process for forming a capacitor of claim 1 wherein said intrinsically conducting polymer is a polythiophene or a derivative thereof.

21. The process for forming a capacitor of claim 20 wherein said intrinsically conducting polymer is polymeric 3,4-ethylenedioxythiophene.

Assignments (3)
RELEASE OF SECURITY INTEREST Recorded Nov 8, 2018
From: BANK OF AMERICA, N.A.
To: KEMET CORPORATION,; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
Reel/Frame 047450/0926 →
SECURITY AGREEMENT Recorded May 22, 2017
From: KEMET CORPORATION; KEMET ELECTRONICS CORPORATION; KEMET BLUE POWDER CORPORATION
To: BANK OF AMERICA, N.A., AS COLLATERAL AGENT
Reel/Frame 042523/0639 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 17, 2013
From: ZHANG, HONG; CHEN, QINGPING; HAHN, RANDOLPH S.
To: KEMET ELECTRONICS CORPORATION
Reel/Frame 030435/0634 →