Co-modulation of DBR laser and integrated optical amplifier
View Patent ↗In an embodiment, a laser chip includes a laser, an optical amplifier, a first electrode, and a second electrode. The laser includes an active region. The optical amplifier is integrated in the laser chip in front of and in optical communication with the laser. The first electrode is electrically coupled to the active region. The second electrode is electrically coupled to the optical amplifier. The first electrode and the second electrode are configured to be electrically coupled to a common direct modulation source.
1. A laser chip comprising:
a laser including an active region;
an optical amplifier integrated in the laser chip in front of and in optical communication with the laser;
a first electrode electrically coupled to the active region; and
a second electrode electrically coupled to the optical amplifier;
wherein the first electrode and the second electrode are configured to be electrically coupled to a common direct modulation source,
wherein the common direct modulation source is configured to supply a modulation signal having a data rate of about 10 gigabits per second or higher, wherein in response to application of the modulation signal to the first electrode, the DBR laser is configured to generate an optical signal having a frequency modulation profile exhibiting both transient chirp and adiabatic chirp, a ratio of transient chirp to adiabatic chirp being in a range from 1:3 to 1:4.
2. The laser chip of claim 1 , wherein the optical amplifier comprises a semiconductor optical amplifier (SOA).
3. The laser chip of claim 2 , further comprising a common guiding structure within the laser and the SOA.
4. The laser chip of claim 3 , wherein the common guiding structure comprises a shallow ridge or a buried heterostructure.
5. The laser chip of claim 1 , wherein the optical amplifier comprises a multimode interference (MMI) semiconductor optical amplifier (SOA).
6. The laser chip of claim 1 , wherein the optical amplifier comprises an N-arm Mach-Zehnder (MZ) modulator where N>1.
7. The laser chip of claim 1 , wherein the active region and the optical amplifier are modulated with a common modulation signal supplied by the common direct modulation source.
8. The laser chip of claim 7 , wherein peaking in a leading edge of an amplification response of the optical amplifier in an absence of application of the common modulation signal to the optical amplifier is at least partially neutralized by peaking in a falling edge of the amplification response of the optical amplifier in response to application of the common modulation signal to the optical amplifier.
9. The laser chip of claim 1 , wherein an extinction ratio (ER) of a first amplitude modulation (AM) optical signal generated by the DBR laser and received by the optical amplifier is less than an ER of a second AM optical signal output by the optical amplifier.
10. The laser chip of claim 1 , wherein the laser chip is packaged in a transistor outline (TO) CAN.
11. The laser chip of claim 10 , further comprising a thermoelectric cooler (TEC) packaged with the laser chip within the TO CAN.
12. The laser chip of claim 1 , wherein the laser comprises a distributed Bragg reflector (DBR) laser including:
a gain section that includes the active region; and
a passive section comprising a Bragg filter in optical communication with the active region.
13. The laser chip of claim 12 , wherein:
the optical amplifier comprises a semiconductor optical amplifier (SOA);
the passive section of the DBR laser is positioned between the gain section of the DBR laser and the SOA; and
a coupling between the passive section of the DBR laser and the SOA comprises a butt joint coupling having an angle off normal incidence of an incoming optical signal generated by the DBR laser.
14. The laser chip of claim 12 , wherein the gain section has a length of about 300 micrometers (um) and the optical amplifier has a length of about 200 um.
15. The laser chip of claim 12 , wherein the gain section of the DBR laser further includes:
an upper separate confinement heterostructure (SCH) above the active region having a thickness of at least 60 nanometers (nm); and
a lower SCH below the active region having a thickness of at least 60 nm.
16. The laser chip of claim 15 , wherein the thickness of the upper SCH is less than 125 nm and the thickness of the lower SCH is less than 125 nm.
17. The laser chip of claim 12 , wherein the DBR laser is tuned toward a long wavelength side of a Bragg peak associated with the DBR laser.