IP Library › Granted Patent US 8,921,984
Granted Patent B2
US 8,921,984 · App. 13/897,613 · Granted Dec 30, 2014

Through silicon via in semiconductor device

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Quick Facts
Patent No.
US 8,921,984
App. No.
13/897,613
Granted
Dec 30, 2014
Kind
B2
Abstract

In a connecting portion between an interconnection and a first bump which is a part of a through electrode penetrating a semiconductor chip and which penetrates a semiconductor substrate, a protruding portion protruding from the interconnection to the side of the first bump is provided. The protruding portion may be made of an insulating material and may be made of a conductive material.

Claims (31)

1. A semiconductor device comprising:

a semiconductor substrate:

a first bump penetrating from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate facing the first surface, the first bump being exposed to the side of the second surface;

an interconnection formed on the first surface, the interconnection being connected to the first bump;

an interlayer insulating film covering the interconnection;

a second bump provided on the interlayer insulating film, the second bump being connected to the interconnection and exposed to the side of the first surface; and

a protruding portion provided at a connecting portion between the first bump and the interconnection, the protruding portion fitting into the first bump.

2. The semiconductor device according to claim 1 , wherein the protruding portion comprises an insulating material.

3. The semiconductor device according to claim 2 , wherein the insulating material comprises the same material of an element isolation insulating film partitioning an active area in which a semiconductor element is formed on the first surface.

4. The semiconductor device according to claim 2 , wherein the insulating material comprises silicon nitride.

5. The semiconductor device according to claim 2 , wherein the protruding portion further comprises a conductive material on the side of connection with the interconnection.

6. The semiconductor device according to claim 2 , wherein a first width of the protruding portion at the side of the interconnection is different from a second width of the protruding portion at the opposite side.

7. The semiconductor device according to claim 1 , wherein the protruding portion is substantially composed of a conductive material.

8. The semiconductor device according to claim 7 , wherein the protruding portion comprises the same material of a substrate contact plug connected to a semiconductor element formed on the first surface.

9. The semiconductor device according to claim 7 , wherein the conductive material comprises tungsten.

10. The semiconductor device according to claim 7 , wherein the surface of protruding portion fitted into the first bump is formed into an uneven shape.

11. The semiconductor device according to claim 1 , wherein a plurality of the protruding portions are arranged in a grid shape in the connecting portion between the first bump and the interconnection.

12. The semiconductor device according to claim 1 , wherein the protruding portion is arranged in a line shape in the connecting portion between the first bump and the interconnection.

13. A semiconductor package comprising a plurality of the semiconductor devices according to claim 1 that are stacked together by connecting the first bump and the second bump to each other.

14. A semiconductor device comprising:

a semiconductor substrate;

a through-via penetrating from a first surface of the semiconductor substrate to a second surface of the semiconductor substrate facing the first surface, the through-via having a subdivided inner terminal formed in a convexo-concave shape;

an interconnection formed on the first surface of the semiconductor substrate, the interconnection being in contact with at least a convex portion of the subdivided inner terminal of the through-via in a connecting portion between the through-via and the interconnection;

an interlayer insulating film covering the interconnection; and

a fitting member provided on the lowermost portion of the interconnection, the fitting member being embedded in a concave portion of the subdivided inner terminal of the through-via.

15. The semiconductor device according to claim 14 , wherein the fitting member comprises an insulating material.

16. The semiconductor device according to claim 15 , wherein the fitting member further comprises a conductive material on the side of connection with the interconnection.

17. The semiconductor device according to claim 14 , wherein the fitting member comprises a conductive material that is electrically connected to the interconnection.

18. The semiconductor device according to claim 17 , wherein the fitting member has an uneven surface.

19. The semiconductor device according to claim 14 , wherein a plurality of the fitting members are arranged in a grid shape in the connecting portion between the through-via and the interconnection.

20. The semiconductor device according to claim 14 , wherein the fitting member is arranged in a line shape in the connecting portion between the through-via and the interconnection.