Resist polymer, process for production thereof, resist composition, and process for production of substrates with patterns thereon
View Patent ↗A resist polymer (Y′), which is used as a resist resin in DUV excimer laser lithography, electron beam lithography, and the like, contains a polymer (Y) comprising: a constituent unit (A) having a lactone skeleton; a constituent unit (B) having an acid-eliminable group; a constituent unit (C) having a hydrophilic group; and a constituent unit (E) having a structure represented by formula (1), wherein a content of the constituent unit (E) is 0.3 mol % or more based on the total number of the constituent units of the resist polymer (Y′): where L is a divalent linear, branched, or cyclic C 1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R 11 is a g-valent linear, branched, or cyclic C 1-20 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24.
1. A resist polymer (Y′) comprising a polymer (Y) comprising:
a constituent unit (A) having a lactone skeleton;
a constituent unit (B) having an acid-eliminable group;
a constituent unit (C) having a hydrophilic group; and
a constituent unit (E) having a structure represented by formula (1)
wherein, in the formula (1), L is a divalent linear, branched, or cyclic C 1-20 hydrocarbon group which may have a substituent and/or a heteroatom; R 11 is a g-valent linear, branched, or cyclic C 1-20 hydrocarbon group which may have a substituent and/or a heteroatom; and g represents an integer of 1 to 24,
wherein constituent unit (B) and constituent unit (E) are not the same units,
wherein polymer (Y) comprises units of constituent unit E on one polymer terminal or on both polymer terminals, and
wherein a content of the constituent unit (E) is from 0.3 mol % to 8 mol % based on the total number of the constituent units of the resist polymer (Y′),
wherein, in the formula (1), R 11 is one of: