DEVICE INCLUDING SEMICONDUCTOR NANOCRYSTALS & METHOD
A method of making a device comprising semiconductor nanocrystals comprises forming a first layer capable of transporting charge over a first electrode, wherein forming the first layer comprises disposing a metal layer over the first electrode and oxidizing at least the surface of the metal layer opposite the first electrode to form a metal oxide, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrystals. A device comprises a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized prior to disposing semiconductor nanocrystals thereover.
1 . A method of making a device comprising semiconductor nanocrystals, the method comprising disposing a first layer capable of transporting charge comprising a metal layer over a first electrode, oxidizing at least the surface of the metal layer opposite the first electrode, disposing a layer comprising semiconductor nanocrystals over the oxidized metal surface, and disposing a second electrode over the layer comprising semiconductor nanocrsytals.
2 . A method in accordance with claim 1 wherein at least a portion of the semiconductor nanocrystals are engineered to generate an electrical output in response to absorption of light having a wavelength to be detected.
3 . A method in accordance with claim 1 wherein at least a portion of the semiconductor nanocrystals are engineered to emit light having a predetermined peak emission wavelength in response to optical or electrical excitation.
4 . A method in accordance with claim 1 wherein the semiconductor nanocrystals are disposed as a layer.
5 . A method in accordance with claim 1 further comprising disposing a second layer comprising a material capable of transporting charge between the layer comprising semiconductor nanocrsytals and disposing the second electrode over the second layer comprising a material capable of transporting charge.
6 . A method in accordance with claim 1 wherein the metal layer comprises an oxidizable metal.
7 . A device comprising a layer comprising semiconductor nanocrystals disposed between a first electrode and a second electrode, and a first layer capable of transporting charge disposed between the layer comprising semiconductor nanocrystals and one of the electrodes, wherein the first layer capable of transporting charge comprises a metal layer wherein at least the surface of the metal layer facing the layer comprising semiconductor nanocrystals is oxidized.
8 . A device in accordance with claim 7 wherein at least a portion of the semiconductor nanocrystals are engineered to generate an electrical output in response to absorption of light having a wavelength to be detected.
9 . A device in accordance with claim 7 wherein at least a portion of the semiconductor nanocrystals are engineered to emit light having a predetermined peak emission wavelength in response to optical or electrical excitation.
10 . A device in accordance with claim 7 wherein the semiconductor nanocrystals are disposed as a layer.
11 . A device in accordance with claim 7 further comprising a second layer comprising a material capable of transporting charge between the layer comprising semiconductor nanocrsytals and the other of the electrodes.
12 . A device in accordance with claim 7 wherein the metal layer comprises an oxidizable metal.
13 . A device in accordance with claim 7 wherein the metal layer is oxidized in situ prior to disposing the layer comprising semiconductor nanocrystals over the oxidized surface.
14 . A device in accordance with claim 7 wherein the device comprises a photodetector.
15 . A device in accordance with claim 7 wherein the device comprises a light emitting device.
16 . A device in accordance with claim 7 wherein the semiconductor nanocrystals comprise PbS and the metal layer comprises bismuth.
17 . A method in accordance with claim 1 wherein the device comprises a photodetector.
18 . A method in accordance with claim 1 wherein the device comprises a light emitting device.
19 . A method in accordance with claim 1 wherein the semiconductor nanociystals comprise PbS and the metal layer comprises bismuth.
20 . (canceled)
21 . (canceled)