Method and device for peeling off silicon wafers
View Patent ↗A device for peeling off silicon wafers, including: a supporting member that is configured to support a board-shaped member to which plural silicon wafers are bonded via an adhesive; a heating unit for heating the board-shaped member; a shifting mechanism that is configured to shift, in a horizontal direction, the supporting member relatively with respect to the heating unit; a peeling-off mechanism that is configured to peel off the silicon wafers one by one; and a container for allowing the silicon wafers, the board-shaped member and the supporting member to soak in a liquid.
1. A method for peeling off silicon wafers, wherein plural silicon wafers, which are bonded to a beam via an adhesive, are peeled off from the beam in a liquid by heating of the beam,
the beam includes a plane,
each of the plural silicon wafers includes a plane,
in a state where each of the planes of the plural silicon wafers is substantially perpendicular to the plane of the beam, the plural silicon wafers are arranged, with gaps between the adjacent silicon wafers, on an upper side of the plane of the beam with respect to a vertical direction, and
in a state where edges of the plural silicon wafers are bonded to the plane of the beam via the adhesive, the peeling off of the silicon wafers is repeatedly performed one by one from an outermost side of the plural silicon wafers arranged.
2. A method for peeling off silicon wafers according to claim 1 , wherein
the peeling off of the silicon wafers is repeatedly performed while the beam is allowed to move relatively with respect to a heating unit for performing the heating.
3. A method for peeling off silicon wafers according to claim 1 , wherein
the beam is electrically conductive, and
the heating of the beam in the liquid is performed by an induction heating method.
4. A method for peeling off silicon wafers according to claim 3 , wherein
when the peeling off of the silicon wafers is performed, a temperature of an outer periphery part of the beam is higher than a temperature of a central part of the beam.