Semiconductor structure having nanocrystalline core and nanocrystalline shell
View Patent ↗A method of fabricating a semiconductor structure involves forming an anisotropic nanocrystalline core from a first semiconductor material, the anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0, and forming a nanocrystalline shell from a second, different, semiconductor material to at least partially surround the anisotropic nanocrystalline core.
1. A method of fabricating a semiconductor structure, the method comprising:
forming an anisotropic nanocrystalline core from a first semiconductor material, the anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0; and
forming a nanocrystalline shell from a second, different, semiconductor material to completely surround the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and extends in a second direction along a second axis perpendicular to the first axis, and wherein the anisotropic nanocrystalline core is formed off-center with respect to the nanocrystalline shell in the first direction along the first axis and off-center with respect to the nanocrystalline shell in the second direction along the second axis, and wherein the nanocrystalline shell is longer in the first direction than in the second direction.
2. The method of claim 1 , further comprising:
prior to forming the nanocrystalline shell, stabilizing the anisotropic nanocrystalline core in solution with a surfactant.
3. The method of claim 2 , wherein the surfactant is octadecylphosphonic acid (ODPA).
4. The method of claim 2 , wherein the surfactant acts as a ligand for the anisotropic nanocrystalline core, the method further comprising:
prior to forming the nanocrystalline shell, replacing the surfactant ligand with a second ligand, the second ligand more labile than the surfactant ligand.
5. The method of claim 4 , wherein the second ligand is selected from the group consisting of a primary amine and a secondary amine.
6. The method of claim 1 , wherein forming the nanocrystalline shell comprises forming the second semiconductor material in the presence of a mixture of surfactants.
7. The method of claim 6 , wherein the mixture of surfactants comprises a mixture of octadecylphosphonic acid (ODPA) and hexylphosphonic acid (HPA).
8. The method of claim 7 , wherein forming the nanocrystalline shell comprises tuning the aspect ratio of the nanocrystalline shell by tuning the ratio of ODPA versus HPA.
9. The method of claim 7 , wherein forming the second semiconductor material in the presence of the mixture of surfactants comprises using a solvent selected from the group consisting of trioctylphosphine oxide (TOPO) and trioctylphosphine (TOP).
10. The method of claim 1 , wherein forming the anisotropic nanocrystalline core comprises forming at a temperature approximately in the range of 350-380 degrees Celsius.
11. The method of claim 1 , wherein forming the anisotropic nanocrystalline core comprises forming a cadmium selenide (CdSe) nanocrystal from cadmium oxide (CdO) and selenium (Se) in the presence of a surfactant at a temperature approximately in the range of 300-400 degrees Celsius, and arresting the reaction prior to completion.
12. The method of claim 11 , wherein forming the nanocrystalline shell comprises forming a cadmium sulfide (CdS) nanocrystalline layer on the CdSe nanocrystal from cadmium oxide (CdO) and sulfur (S) at a temperature approximately in the range of 120-380 degrees Celsius, and arresting the reaction prior to completion.
13. A method of fabricating a semiconductor structure, the method comprising:
forming an anisotropic nanocrystalline core from a first semiconductor material; and
forming a nanocrystalline shell from a second, different, semiconductor material to completely surround the anisotropic nanocrystalline core, wherein the nanocrystalline shell has a center, wherein the nanocrystalline shell extends in a first direction along a first axis and extends in a second direction along a second axis perpendicular to the first axis, and wherein the anisotropic nanocrystalline core is formed off-center with respect to the nanocrystalline shell in the first direction along the first axis and off-center with respect to the nanocrystalline shell in the second direction along the second axis, and wherein the nanocrystalline shell is longer in the first direction than in the second direction.
14. The method of claim 13 , further comprising:
prior to forming the nanocrystalline shell, stabilizing the anisotropic nanocrystalline core in solution with a surfactant.
15. The method of claim 14 , wherein the surfactant is octadecylphosphonic acid (ODPA).
16. The method of claim 14 , wherein the surfactant acts as a ligand for the anisotropic nanocrystalline core, the method further comprising:
prior to forming the nanocrystalline shell, replacing the surfactant ligand with a second ligand, the second ligand more labile than the surfactant ligand.
17. The method of claim 16 , wherein the second ligand is selected from the group consisting of a primary amine and a secondary amine.
18. The method of claim 13 , wherein forming the nanocrystalline shell comprises forming the second semiconductor material in the presence of a mixture of surfactants.
19. The method of claim 18 , wherein the mixture of surfactants comprises a mixture of octadecylphosphonic acid (ODPA) and hexylphosphonic acid (HPA).
20. The method of claim 19 , wherein forming the nanocrystalline shell comprises tuning the aspect ratio of the nanocrystalline shell by tuning the ratio of ODPA versus HPA.
21. The method of claim 19 , wherein forming the second semiconductor material in the presence of the mixture of surfactants comprises using a solvent selected from the group consisting of trioctylphosphine oxide (TOPO) and trioctylphosphine (TOP).
22. The method of claim 13 , wherein forming the anisotropic nanocrystalline core comprises forming at a temperature approximately in the range of 350-380 degrees Celsius.
23. The method of claim 13 , wherein forming the anisotropic nanocrystalline core comprises forming a cadmium selenide (CdSe) nanocrystal from cadmium oxide (CdO) and selenium (Se) in the presence of a surfactant at a temperature approximately in the range of 300-400 degrees Celsius, and arresting the reaction prior to completion.
24. The method of claim 23 , wherein forming the nanocrystalline shell comprises forming a cadmium sulfide (CdS) nanocrystalline layer on the CdSe nanocrystal from cadmium oxide (CdO) and sulfur (S) at a temperature approximately in the range of 120-380 degrees Celsius, and arresting the reaction prior to completion.